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Light-emitting diode and method of making the same

A technology of light-emitting diodes and light-emitting layers, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, and semiconductor/solid-state device manufacturing. It can solve problems such as device damage, reduce the risk of contact, improve luminous performance, and eliminate electrical properties. the effect of the influence

Active Publication Date: 2022-08-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a method for preparing a light-emitting diode, which aims to solve the problem that the annealing process of the existing electron transport layer easily causes internal damage to the device

Method used

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  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same

Examples

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preparation example Construction

[0019] A preparation method of a light-emitting diode, such as figure 1 shown, including the following steps:

[0020] S01, providing a substrate and an indium zinc oxide precursor, and depositing the indium zinc oxide precursor on the substrate to form an indium zinc oxide precursor thin film;

[0021] S02, irradiating the indium zinc oxide precursor film with infrared laser, and performing annealing treatment to form an indium zinc oxide film;

[0022] S03, using ultraviolet laser to irradiate the indium zinc oxide thin film, and performing post-annealing treatment.

[0023] In the method for preparing a light-emitting diode provided by the embodiment of the present invention, on the one hand, an infrared laser is used to irradiate the indium zinc oxide precursor film, so that the temperature of the material surface is instantly increased to generate a thermal effect, so as to form an indium zinc oxide film, so as to achieve the purpose of annealing. It is effective, great...

Embodiment approach

[0026] As an embodiment, the substrate is formed with: a light-emitting layer;

[0027] The step of depositing the indium zinc oxide precursor on the substrate includes depositing the indium zinc oxide precursor on the light emitting layer.

[0028] An indium zinc oxide precursor is deposited on the light emitting layer, thereby forming an indium zinc oxide thin film on the light emitting layer. Since the embodiment of the present invention adopts the method of annealing with infrared laser and ultraviolet laser successively, the annealing time is greatly shortened and the performance of the film layer is improved, and at the same time, the possible impact of annealing on light-emitting layer materials such as quantum dots is also taken into account. It improves the performance and life of the device.

[0029] In some embodiments, the host includes: an anode on which the light-emitting layer is formed.

[0030] For the material of the anode, reference may be made to conventi...

Embodiment 1

[0062] This embodiment prepares a light-emitting diode, which specifically includes the following steps:

[0063] 1. Preparation of IZO precursor solution

[0064] First, 0.1M [In(NO 3 ) 3 ·xH 2 O] powder was placed in a reagent bottle, and 2.5ml of ethylene glycol methyl ether, 50ml of acetone, and 22.5ml of ammonia water were added to the bottle. Then prepare another reagent bottle, add 0.1M [Zn(CH) 3 COO) 2 ·2H 2 O] powder, 1.5 ml of ethylene glycol methyl ether and 30 ml of acetone. The two reagent bottles were placed in a magnetic stirrer and stirred at 700 rpm for one hour at a temperature of 60°C. The obtained two solutions were mixed in a ratio of one to one, and then fully stirred at a speed of 500 rpm for three hours in an environment of 27° C. to obtain an IZO precursor solution.

[0065] 2. Preparation of light-emitting diodes

[0066] (1) On an ITO glass substrate, spin-coating PEDOT:PSS at a rotational speed of 5000 rpm, the spin-coating time is 30 secon...

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Abstract

The invention belongs to the technical field of display, and in particular relates to a light emitting diode and a preparation method thereof. The preparation method provided by the invention includes: depositing an indium zinc oxide precursor on a substrate to form an indium zinc oxide precursor film; irradiating the indium zinc oxide precursor film with an infrared laser, and performing annealing treatment to form an indium zinc oxide film; The indium zinc oxide thin film is irradiated by ultraviolet laser for post-annealing treatment. The problem that the annealing process of the existing electron transport layer easily causes damage to the inside of the device is solved.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a light emitting diode and a preparation method thereof. Background technique [0002] In recent years, indium zinc oxide (IZO) has been widely used in the preparation of solar cells, thin film transistors and light emitting diodes due to its excellent electrical properties and good visible light transmittance, and has broad development prospects. Due to the advantages of short production cycle, controllable composition, simple process and low cost, the method of preparing indium zinc oxide (IZO) by sol-gel method can meet most of the research and development needs and is widely used. [0003] Quantum Dot Light Emitting Diodes (QLED) are mainly composed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and other functional film layers to form a structure similar to a p-i-n junction. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/54H01L51/50
CPCH10K71/421H10K50/16H10K2102/103H10K71/00Y02P70/50
Inventor 敖资通严怡然杨帆赖学森
Owner TCL CORPORATION
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