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Titanium dioxide semiconductor film, preparation method and application of titanium dioxide semiconductor film in photoelectrocatalysis

A titanium dioxide and semiconductor technology, applied in the field of optoelectronic semiconductor thin film materials, can solve the problems of low photocurrent density of titanium dioxide thin film, low photoelectric catalytic efficiency, affecting the popularization and application of titanium dioxide thin film, etc. Effect

Active Publication Date: 2021-07-20
ENERGY RES INST OF SHANDONG ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the inventors found that the photocurrent density of the titanium dioxide film prepared by the existing method is low, all lower than 300μA / cm -2 , resulting in low photocatalytic efficiency of pure titanium dioxide, which affects the popularization and application of titanium dioxide thin films in the field of photocatalysis

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  • Titanium dioxide semiconductor film, preparation method and application of titanium dioxide semiconductor film in photoelectrocatalysis
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  • Titanium dioxide semiconductor film, preparation method and application of titanium dioxide semiconductor film in photoelectrocatalysis

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Embodiment approach

[0040] The third embodiment of the present invention provides an application of the above-mentioned titanium dioxide semiconductor thin film in photoelectrocatalysis.

[0041] The fourth embodiment of the present invention provides a photoelectric catalytic reactor, including a photoanode, and the active material of the photoanode is the above-mentioned titanium dioxide semiconductor thin film.

[0042] A specific method for the application of titanium dioxide semiconductor thin film in photoelectrocatalysis, for example, providing the photoelectrocatalytic reactor mentioned above to split water to produce hydrogen.

[0043] In order to enable those skilled in the art to understand the technical solution of the present invention more clearly, the technical solution of the present invention will be described in detail below in conjunction with specific examples and comparative examples.

[0044] In a specific embodiment, the target used is a titanium target with a size of 3 inc...

Embodiment 1

[0046] The anatase TiO of this embodiment 2 The preparation method of thin film, comprises the following steps:

[0047] 1) Cleaning the glass substrate: Put the glass substrate into acetone, isopropanol, ethanol and deionized water in sequence for ultrasonic cleaning, each cleaning time is 20min, and the cleaning temperature is 50°C; Wipe it clean with a dust-free cloth, and finally put it into the sputtering chamber of the remote plasma sputtering system, ready for sputtering;

[0048] 2) Sputtering: Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0049] Before reactive sputtering, the sputtering chamber of the remote plasma sputtering system was evacuated to 5×10 -6 mbar, and then 100 sccm of argon gas is introduced into the chamber. After the pressure in the chamber remains stable, the plasma source emissi...

Embodiment 2

[0056] The anatase TiO of this embodiment 2 The preparation method of thin film, comprises the following steps:

[0057] 1) Cleaning the glass substrate: Put the glass substrate into acetone, isopropanol, ethanol and deionized water in sequence for ultrasonic cleaning, each cleaning time is 20min, and the cleaning temperature is 50°C; Wipe it clean with a dust-free cloth, and finally put it into the sputtering chamber of the remote plasma sputtering system, ready for sputtering;

[0058] 2) Sputtering: Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0059] Before reactive sputtering, the sputtering chamber of the remote plasma sputtering system was evacuated to 5×10 -6 mbar, and then 100 sccm of argon gas is introduced into the chamber. After the pressure in the chamber remains stable, the plasma source emissi...

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Abstract

The invention discloses a titanium dioxide semiconductor film, a preparation method and application of the titanium dioxide semiconductor film in photoelectrocatalysis, a crystal phase structure of the titanium dioxide semiconductor film is an anatase phase structure, and in a transmission electron microscope high-resolution map of a crystal face (131), the distance between adjacent crystal faces (101) is as shown in the specification. The preparation method comprises the following steps: performing reactive sputtering on metallic titanium to obtain a deposition-state titanium dioxide film, and annealing the deposition-state titanium dioxide film to obtain an anatase titanium dioxide film, wherein the obtained anatase titanium dioxide film is the target product titanium dioxide semiconductor film. The titanium dioxide semiconductor film provided by the invention has higher photocurrent density, so that the titanium dioxide semiconductor film has better photoelectrocatalysis efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectric semiconductor thin film materials, and relates to a titanium dioxide semiconductor thin film, a preparation method and its application in photoelectric catalysis. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] The photoelectrochemical reaction refers to the oxidation-reduction reaction between the photogenerated electron-hole pairs generated by light irradiation on the semiconductor surface in contact with the electrolyte and the ions in the solution after being separated by the electric field of the semiconductor / electrolyte junction. Photocatalysis is a special kind of heterogeneous ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/077C25B11/087C25B1/04C25B1/55C23C14/08C23C14/34C23C14/58
CPCC25B1/04C23C14/0036C23C14/083C23C14/34C23C14/5806Y02E60/36
Inventor 宋安刚朱地赵保峰关海滨徐丹王树元冯翔宇
Owner ENERGY RES INST OF SHANDONG ACAD OF SCI
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