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Purification method and purification system of electronic-grade tetraethoxysilane

A technology of ethyl orthosilicate and purification method, which is applied in the field of purification method and purification system of electronic grade ethyl orthosilicate, can solve the problems of incapable of continuous production, high production cost, large energy consumption and the like, and achieves easy operation, Low cost and effect of reducing separation load

Pending Publication Date: 2021-08-24
SUZHOU JINHONG GAS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the existing electronic-grade orthosilicate purification method consumes too much energy, the production cost of the product is high, and continuous production is not possible.

Method used

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  • Purification method and purification system of electronic-grade tetraethoxysilane
  • Purification method and purification system of electronic-grade tetraethoxysilane
  • Purification method and purification system of electronic-grade tetraethoxysilane

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Embodiment 1

[0040] Please refer to figure 1 , a purification system for electronic-grade orthosilicate, comprising a raw material tank for storing and outputting orthosilicate; an adsorption column communicated with the discharge end of the raw material tank; a first rectification tower connected with The discharge end of the adsorption column is communicated; the second rectification tower is communicated with the bottom of the first rectification tower; the third rectification tower is communicated with the top of the second rectification tower; the fourth rectification tower is communicated with the top of the second rectification tower; A rectification tower communicates with the bottom of the second rectification tower.

[0041] Also comprising the first recovery tank, its feed end is connected with the tower top of the first rectification tower and the bottom of the second rectification tower; the second recovery tank, its feed end is connected with the third rectification tower Th...

Embodiment 2

[0043] This embodiment is carried out on the basis of the above-mentioned embodiment 1, and the similarities with the above-mentioned embodiment will not be repeated.

[0044] Please refer to figure 2 , the first recovery tank and the second recovery tank are replaced by a low boiler recovery tank and a high boiler recovery tank; The top of the distillation tower is connected; the feed end of the high boiler recovery tank is connected with the bottom of the second rectification column and the bottom of the fourth rectification column; the low boiler recovery tank and the high boiler recovery tank are respectively A deluge system is connected; part of tetraethyl orthosilicate, water vapor, ethanol, ether and others are recovered in the low boiling matter recovery tank; part of tetraethyl orthosilicate, high Silicon tetrachloride, monomethoxytriethoxy silicon, metal ions and others.

Embodiment 3

[0046] This embodiment mainly introduces a method for purifying electronic grade orthosilicate, the steps are as follows:

[0047] S100) filling with nitrogen;

[0048] Wherein, the nitrogen filling in step S100) specifically includes opening the communication valve inside the system, closing the communication valve connecting the system to the outside, performing nitrogen filling and pressure relief operations in the system, and repeating the above operations at least three times;

[0049] More specifically, first check the heating medium temperature, pressure, circulating soft water pressure, flow rate, nitrogen pressure, instrument air pressure, exhaust gas environmental protection treatment device input and pipeline inspection, etc., to ensure that all pneumatic valves in the system have been debugged and act normally, and Consistent with the computer display; then open the internal communication valve of the system, close the communication valve connecting the system to t...

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Abstract

The invention discloses a purification method and a purification system of electronic-grade tetraethoxysilane. The purification method comprises the following steps: S100) carrying out nitrogen filling; S200) carrying out adsorption operation on a crude tetraethoxysilane crude product to obtain a product of which impurities are preliminarily removed; and S300) carrying out a multi-tower continuous rectification process on the product from which the impurities are preliminarily removed to obtain the electronic-grade tetraethoxysilane, by adopting an adsorption column and a multi-tower continuous rectification process, component impurities such as silicon tetrachloride, ethanol, diethyl ether and monomethoxytriethoxysilane are separated, and various metal impurities are removed, so that the electronic-grade tetraethoxysilane product is obtained; and the adsorption column is arranged at the front section of a rectification tower, so that part of metal ions can be removed, the separation load of the rectification tower is greatly reduced, and the complexity of the system is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and system for purifying electronic-grade orthosilicate. Background technique [0002] The methods for forming oxide layers in semiconductor processes mainly include thermal oxidation (for semiconductor materials that can form their own stable oxide layers), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) and atmospheric pressure chemical vapor deposition ( APCVD), etc., because APCVD requires a large gas flow and relatively many particles generated by the process, most semiconductor processes are rarely used at present. [0003] When tetraethyl orthosilicate (TEOS) is used for LPCVD, TEOS evaporates from a liquid state to a gaseous state, decomposes at 700-750°C and 300mTOR pressure, and deposits a silicon dioxide film on the surface of a silicon wafer. The deposition rate of the silicon dioxide film can be It ca...

Claims

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Application Information

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IPC IPC(8): C07F7/04
CPCC07F7/04
Inventor 孙猛齐相前顾鸿宇
Owner SUZHOU JINHONG GAS CO LTD
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