Damascus copper plating formula and electroplating process thereof
A formula and copper plating technology, applied in electrical components, printed circuits, printed circuit manufacturing, etc., can solve the problems of reducing the width of copper interconnection lines and difficulty in electroplating copper filling, etc.
Inactive Publication Date: 2021-09-14
SHENZHEN CHUANGZHI SUCCESS TECH CO LTD
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Problems solved by technology
[0004] The purpose of the present invention is to provide a damascus copper plating formula and its electroplating process to solve the technical problems of rapid reduction in the width of copper interconnect lines and difficulty in electroplating copper filling
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Embodiment Construction
[0030] In order to better understand the purpose, structure and function of the present invention, a Damascus copper plating formulation of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0031] Experimental process of electroless copper plating:
[0032] (1) Sample preparation
[0033] The simulated silicon wafer used was provided by Applied Materials, USA, with a 5nm-thick copper seed layer on the surface. Before use, cut off a silicon wafer from the whole chip with a glass cutter (containing a channel with a width from 80nm to 500nm above), and set it aside for use.
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The invention discloses a Damascus copper plating formula and an electroplating process thereof, and belongs to the technical field of chemical copper plating. The Damascus copper plating formula is prepared by adding water into the following raw materials in mass concentration: 8.0 to 15.0 g / L of copper sulfate pentahydrate, 25.0 to 40.0 g / L of disodium ethylene diamine tetraacetate, 9.0 to 15.0 g / L of glyoxylic acid, 55.0 to 65.0 mg / L of Cl-55.0 mg / L, 0.5 to 1.5 mg / L of ABA type bubble-free nonionic polymer surfactant containing polyethylene oxide (EO) and polypropylene oxide (PO), 0.3 to 4 mg / L of sodium dithiodipropane sulfonate (SPS), 0.5 to 1.5 mg / L of polyvinyl alcohol (PEG) PEG-4000 and 0.2 to 0.4 mg / L of Junagreen B (JGB), wherein the pH value is 12 to 13, and the temperature is 65 to 75 DEG C. According to the invention, a world mainstream level copper electroplating blind hole filling formula is obtained, and blind hole filling capability of the electroplating liquid is improved by more than 40%.
Description
technical field [0001] The invention belongs to the technical field of electroless copper plating, in particular to a damascus copper plating formula and an electroplating process thereof. Background technique [0002] Since metal copper (1.68Ω·cm) has a lower resistivity than metal aluminum (2.78Ω·cm), and considering that silver (1.59Ω·cm) has greater electron mobility, copper is a better alternative. Alternative metals can reduce latency by up to 40%. Metal copper also has very good anti-electron migration performance, which is beneficial to improve the reliability of silicon wafers. Metal copper can not only reduce the delay time, but also minimize the thermal effect under high current density. In addition, as long as it is in the low current density area, the use of metal copper can also better make the level of interconnection scales freely, so metal copper is currently widely used in the metallization process of VLSI. The production of copper interconnection mostly ...
Claims
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Login to View More IPC IPC(8): C25D3/38H05K3/42
CPCC25D3/38H05K3/423
Inventor 姚玉
Owner SHENZHEN CHUANGZHI SUCCESS TECH CO LTD
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