Ga2O3 metal oxide semiconductor field effect transistor based on supercritical CO2 treatment and preparation method thereof
An oxide semiconductor and field effect transistor technology, applied in the field of microelectronics, can solve problems such as reduction of carrier mobility and device switching ratio, increase of gate leakage and sub-threshold swing, and impact on device performance stability. , to reduce the possibility of gate tunneling, reduce gate leakage, and avoid premature breakdown.
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Embodiment 1
[0041] Embodiment 1, making the gate dielectric is a layer of Al 2 o 3 , and mixed with 0.5ml deionized water, supercritical CO 2 Treat Ga for 1h 2 o 3 MOSFET devices.
[0042] Step 1, perform standard cleaning on the substrate, such as figure 2 (a).
[0043] will grow with UIDβ-Ga 2 o 3 Fe / Mg doped β-Ga in the buffer layer 2 o 3 Semi-insulating substrate, put it in 50ml of acetone and ultrasonically clean it for 5min at 80W power;
[0044] Then use 50ml of ethanol and deionized water to sonicate at 80W for 1min, and finally blow dry with high-purity nitrogen.
[0045] Step 2, grow n-type β-Ga on the buffer layer 2 o 3 epitaxial layer, such as figure 2 (b).
[0046] Put the sample that has completed the standard cleaning into the MBE equipment, and heat and evaporate Ga metal with a purity of 99.9999% and SnO with a purity of 99.99% in a K chamber at 800°C 2 Powder to provide Ga element and Sn element, using 5% ozone and 95% oxygen mixture as the source of O e...
Embodiment 2
[0072] Embodiment 2, making the gate dielectric is a layer of HfO 2 , and mixed with 1ml deionized water, supercritical CO 2 Process Ga for 1.5h 2 o 3 MOSFET devices.
[0073] Step 1, perform standard cleaning on the substrate, such as figure 2 (a).
[0074] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0075] Step 2, growing n-type β-Ga on the buffer layer 2 o 3 epitaxial layer, such as figure 2 (b).
[0076] Put the sample that has completed standard cleaning into the MBE equipment, and heat and evaporate Ga metal with a purity of 99.9999% and SnO with a purity of 99.99% in a K chamber at 760°C 2 Powder to provide Ga element and Sn element, using 5% ozone and 95% oxygen mixture as the source of O element;
[0077] Apply a size of 2*10 to the obtained Ga atomic beam -4 The equivalent pressure of Pa makes it enter the reaction chamber, and the O 3 and O 2 Mix the gas, and heat the substrate to a temperature of 700°C, and finally...
Embodiment 3
[0100] Embodiment 3, making the gate dielectric is Al 2 o 3 and HfO 2 Double-layer structure, and mixed with 1ml isopropanol, supercritical CO 2 Treat Ga for 2h 2 o 3 MOSFET devices.
[0101] Step A, perform standard cleaning on the substrate, such as figure 2 (a).
[0102] The specific implementation of this step is the same as step 1 of Embodiment 1.
[0103] Step B, growing n-type β-Ga on the buffer layer 2 o 3 epitaxial layer, such as figure 2 (b).
[0104] Put the sample that has completed the standard cleaning into the MBE equipment, heat and evaporate Ga metal with a purity of 99.9999% and SnO with a purity of 99.99% in a K chamber at 860°C 2 Powder to provide Ga element and Sn element, using 5% ozone and 95% oxygen mixture as the source of O element;
[0105] Apply a size of 2*10 to the obtained Ga atomic beam -4 The equivalent pressure of Pa makes it enter the reaction chamber, and the O 3 and O 2 Mix the gases, and heat the substrate to a temperature...
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