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Crystalline oxide thin film, multilayer body and thin film transistor

An oxide thin film, thin film transistor technology, applied in transistors, crystal growth, coating, etc., can solve problems such as deviation reliability, deterioration, pipeline corrosion, etc., and achieve the effect of good mobility

Active Publication Date: 2021-11-05
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the case of adding water to the sputtering gas to form a film, the technical problem related to the process equipment is the corrosion of the pipe, and the problem related to the TFT characteristics is the in-plane variation of the threshold voltage Vth caused by the influence of hydrogen atoms and poor reliability

Method used

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  • Crystalline oxide thin film, multilayer body and thin film transistor
  • Crystalline oxide thin film, multilayer body and thin film transistor
  • Crystalline oxide thin film, multilayer body and thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0306] A thin film transistor was manufactured through the following steps.

[0307] (1) Formation of an oxide semiconductor layer

[0308] The sputtering target obtained from the raw material mixture of the ingredient composition ratio shown in Table 1 was used. Table 1 shows the metal composition ratio (unit: at%) in the oxide sputtering target.

[0309] Using this oxide sputtering target, an oxide semiconductor thin film (oxide semiconductor layer). The film-forming conditions are shown in Table 1. A mixed gas of high-purity argon and high-purity oxygen (impurity gas concentration: 0.01% by volume) was used as the sputtering gas.

[0310] (2) Semiconductor patterning

[0311] Next, the formed oxide semiconductor layer is patterned into an island shape by photolithography.

[0312] First, a photoresist film is formed on the oxide semiconductor layer. As the photoresist, AZ1500 (manufactured by AZ Electronic Materials) was used. Exposure was performed through a photom...

Embodiment 2~3

[0339] Small TFTs according to Examples 2 to 3 were manufactured in the same manner as in Example 1 except that the ingredient composition ratio of the sputtering target and the small TFT production conditions were changed as shown in Table 1.

Embodiment 4~8

[0343] Small TFTs related to Examples 4 to 8 were manufactured in the same manner as in Example 1 except that the ingredient composition ratio of the sputtering target and the small TFT production conditions were changed as shown in Table 2.

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Abstract

A crystalline oxide thin film which contains elemental In, elemental Ga and elemental Ln that is composed of one or more elements that are selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and which is mainly composed of elemental In, while having an average crystal grain size D1 of from 0.05 [mu]m to 0.5 [mu]m (inclusive).

Description

technical field [0001] The present invention relates to a crystalline oxide thin film, a laminate, and a thin film transistor. Background technique [0002] A technical problem with amorphous oxide semiconductors is the instability of electron carriers due to oxygen vacancies. [0003] In this regard, in Patent Document 1 and Patent Document 2, a composition containing In (indium) and Ga (gallium) is mainly used, and water (H 2 O) By adding sputtering gas to form a film, a crystalline oxide semiconductor material can be used for the channel, and a high-mobility and stable TFT can be produced. [0004] In the case of adding water to the sputtering gas to form a film, the technical problem related to the process equipment is the corrosion of the pipe, and the problem related to the TFT characteristics is the in-plane variation of the threshold voltage Vth caused by the influence of hydrogen atoms and Reliability deteriorates. [0005] With regard to these technical problems...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C30B29/22H01L29/786
CPCC23C14/08C30B29/22H01L29/267H01L29/66969H01L29/7869H01L29/04H01L21/02565H01L21/02631H01L21/02422H01L21/02595H01L29/7391H01L29/66356H01L21/02667H01L29/24
Inventor 川岛绘美井上一吉大山正嗣柴田雅敏
Owner IDEMITSU KOSAN CO LTD