Avalanche diode based on transverse structure and preparation method thereof

Abstract

The invention discloses an avalanche diode based on a transverse structure and a preparation method thereof, and the method comprises the steps: growing an N-polarity GaN layer based on a substrate layer according to a first growth parameter; according to a second growth parameter, growing an n-type Al<x>Ga<1-x>N barrier layer based on the N-polarity GaN layer to obtain an Al<x>Ga<1-x>N / GaN heterojunction; carrying out etching operation on the Al<x>Ga<1-x>N / GaN heterojunction, so that a first groove and a second groove are etched in the two sides of the n-type Al<x>Ga<1-x>N barrier layer, a third groove is etched above the N polarity GaN layer and the n-type Al<x>Ga<1-x> N barrier layer, and the first groove and the second groove enable the Al<x>Ga<1-x>N / GaN heterojunction to form a mesa structure; and performing evaporation sputtering treatment in the first groove and the second groove to obtain a Schottky contact electrode and an ohmic contact electrode. According to the diode prepared by the invention, the working frequency can be improved by utilizing relatively high carrier mobility and saturation drift speed, and the application range of the diode is widened.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an avalanche diode based on a lateral structure and a preparation method thereof. Background technique [0002] Avalanche diode, also known as IMPATT (Impact Avalanche Transit Time, impact avalanche and transit time) diode, this diode is a solid-state microwave power source with ultra-high output power and good DC-AC power. In addition, based on GaN The avalanche diode on the gallium nitride substrate has an injection delay and a transit delay, which can generate a time-domain AC negative resistance, and it also has a large current density and power density. Therefore, avalanche diodes based on GaN gallium nitride substrates are widely used in communications, radar systems, microwave power, aerospace and other fields. [0003] However, in the prior art, the avalanche diode based on the GaN gallium nitride substrate is usually a vertical structure, and after ...

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Problems solved by technology

[0003] However, in the prior art, the avalanche diode based on the GaN gallium nitride substrate is usually a vertical structure, and after the GaN / AlGaN heterojunction is introduced into the vertical structure and a two-dimensional electron gas is formed, the carriers will be Drift is carried out perpendicular to the direction of the two-dimensional electron gas, so that the mobility of the vertical structure is bulk mobility rather than two-dimensional electron gas mobility. Further, for GaN materials, its high-frequency advantage mainly reflects High carrier saturation drift velocity and high mobility in the two-dimensional electron gas, therefore, vertical structure avalanche diodes based on GaN gallium nitride substrates cannot exert high-frequency performance, and the application scenarios are limited

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