Unlock instant, AI-driven research and patent intelligence for your innovation.

Erbium-doped lithium niobate film-based frequency-stabilized and frequency-modulated laser and production method

A technology of erbium lithium niobate and lasers, which is applied in the field of lasers, can solve the problems of overlap and deterioration of the pump mode spot and the laser mode spot, deteriorate the quality of the output mode spot, and affect the output power, etc., and achieve narrow linewidth and large gain , The effect of increasing the power in the cavity

Active Publication Date: 2021-11-12
SHANGHAI JIAO TONG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal effect and photorefractive effect in the cavity can change the refractive index by 10-4~10-5, which will significantly change the mode field distribution, resulting in pumping The overlapping of the mold spot and the laser spot becomes worse, which affects the output power and deteriorates the quality of the output spot

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Erbium-doped lithium niobate film-based frequency-stabilized and frequency-modulated laser and production method
  • Erbium-doped lithium niobate film-based frequency-stabilized and frequency-modulated laser and production method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0057] The preparation method of the frequency-stabilized and frequency-modulated laser based on the erbium-doped lithium niobate thin film comprises the following steps:

[0058] 1) The erbium-doped lithium niobate thin film 1 on an insulator is selected as the matrix material, and the chip is followed by a substrate 3, a silicon dioxide cladding layer 2 and an erbium-doped lithium niobate thin film 1 from top to bottom, and the erbium-doped lithium niobate thin film 1 is Thin film 1 has a thickness of 0.4-0.8 microns, lithium niobate is x-cut, and the doping concentration of erbium ions is 0.5-1.5 mol%; the silicon dioxide cladding 2 is thicker than 2 microns, and is used as the lower cladding of the waveguide Layer; the material of the substrate 3 can be silicon, lithium niobate or other materials, which play a supporting role, and the thickness is generally several hundred microns;

[0059] 2) Deposit a silicon nitride film on the substrate material using a low-pressure ch...

Embodiment

[0072] In a preferred embodiment, the thickness of the erbium-doped lithium niobate film is 0.6 microns, the thickness of the silicon dioxide cladding layer is 2 microns, and the thickness of the silicon substrate material is 400 microns. The thickness of the silicon nitride film is 100nm. The first tapered waveguide area and the second tapered waveguide area have the same parameters, the straight waveguide has a width of 1 micron and a length of 100 microns, and the tapered waveguide has a minimum width of 1 micron, a maximum width of 3 microns and a length of 500 microns. The minimum distance between the metal electrode and the grating is 4 microns. 1480nm, the laser wavelength and the resonant wavelength of the first grating region are both 1531nm, and the pumping wavelength and the resonant wavelength of the second grating region are both 1480nm.

[0073] figure 1 A structural schematic diagram of the present invention is provided, figure 2 Under the parameters of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an erbium-doped lithium niobate film-based frequency-stabilized and frequency-modulated laser and a production method. The laser comprises an erbium-doped lithium niobate film, a silicon dioxide cladding, a substrate, a first conical waveguide region, a first grating region, a second grating region, a second conical waveguide region, a first electrode pair, a second electrode pair, a pump laser, a first isolator, a first conical optical fiber, a second conical optical fiber, a wavelength division multiplexer, a second isolator and a control power supply. An erbium-doped lithium niobate film on an insulator is used as a matrix material, a silicon nitride film is deposited on erbium-doped lithium niobate, and the first conical waveguide region, the first grating region, the second grating region, the second conical waveguide region, the first electrode pair and the second electrode pair are prepared so that the frequency of the laser is electrically controlled; and the frequency stabilization output of the laser can be realized under different pumping powers, the frequency modulation output of the laser under the given pumping power can be realized, and the application prospect is wide.

Description

technical field [0001] The invention relates to a laser, in particular to a frequency-stabilized and frequency-modulated laser based on an erbium-doped lithium niobate thin film and a preparation method. Background technique [0002] Integrated lasers in the optical communication band are research hotspots in the field of integrated photonics. From semiconductor materials to erbium-doped waveguides, various types of laser research emerge in endlessly. Recently, erbium-doped lithium niobate thin films have attracted extensive attention because they take into account the gain characteristics of erbium ions and the electro-optic properties of lithium niobate materials. Compared with the gain media of III-V semiconductors, erbium ions have a longer upper-level particle lifetime, so on-chip low-noise optical amplifiers and low-noise lasers can be realized. The lithium niobate thin film can greatly enhance the electro-optical effect in the original lithium niobate crystal by conf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/062H01S5/0687H01S5/10H01S5/02
CPCH01S5/0622H01S5/1003H01S5/0687H01S5/0206
Inventor 吴侃蔡明璐陈建平
Owner SHANGHAI JIAO TONG UNIV