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Method for high-cleanliness lossless transfer of graphene nanobelts

A graphene nanoribbon, clean technology, applied in the direction of graphene, single-layer graphene, nano-carbon, etc., can solve the difficulty of obtaining ultra-clean high-quality graphene nanoribbon, can not be realized, graphene nanoribbon transfer work Complexity and other issues to achieve the effect of avoiding stacking, avoiding reunion, and simple process

Active Publication Date: 2021-11-23
GUANGDONG MORION NANOTECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will make the transfer of graphene nanoribbons more complicated, and it will be more difficult to obtain ultra-clean high-quality graphene nanoribbons
Ultra-clean and non-destructive transfer of graphene nano-transfer process cannot be overcome. Before that, graphene nano-belts were difficult to apply to nano-electronic components, and it was impossible to break Moore's law that broke the physical limit of silicon materials and achieve ultra-integration of <5nm process. dream

Method used

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  • Method for high-cleanliness lossless transfer of graphene nanobelts

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A kind of method that the present invention proposes highly clean nondestructive transfer graphene nanoribbon, concrete steps are as follows:

[0025] (1) The Mica substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 20 minutes in sequence, the purpose of which is to remove organic impurities and dust on the surface of the Mica;

[0026] (2) Transfer the cleaned Mica substrate to a plasma-assisted magnetron sputtering apparatus, replace the pure gold target, and grow a 30nm-thick Au(111) layer on the Mica substrate to obtain the Au(111) / Mica growth substrate.

[0027] (3) The Au(111) / Mica sample obtained in step (2) was washed with absolute ethanol to remove surface impurities, and transferred to a plasma-assisted CVD furnace, using ethylene as the growth source gas, on the Au(111) surface A single layer of N=7 GNR is grown, where N=7 means that the graphene nanoribbon width is 7 atoms wide, and N=7 GNR / Au(111) / Mica sample is obtai...

Embodiment 2

[0036] A method for highly clean and non-destructive transfer of graphene nanoribbons, the specific steps are as follows:

[0037] (1) The Mica substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 20 minutes in sequence, the purpose of which is to remove organic impurities and dust on the surface of the Mica;

[0038] (2) Transfer the cleaned Mica substrate to a plasma-assisted magnetron sputtering apparatus, replace the pure gold target, and grow a 30nm-thick Au(111) layer on the Mica substrate to obtain the Au(111) / Mica growth substrate.

[0039] (3) The Au(111) / Mica sample obtained in step (2) was washed with absolute ethanol to remove surface impurities, and transferred to a plasma-assisted CVD furnace, using ethylene as the growth source gas, on the Au(111) surface A single layer of N=7 GNR is grown, where N=7 means that the graphene nanoribbon width is 7 atoms wide, and N=7 GNR / Au(111) / Mica sample is obtained.

[0040] (4) During t...

Embodiment 3

[0050] The difference between this example and Example 1 is that the iodine solution of potassium iodide in step (9) in Example 1 is replaced by nitrohydrochloric acid configured with concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of 1:3, and the solution is dropped on the surface of the sample. On , the iodine solution of potassium iodide slowly etches the Au(111) layer. The Au(111) coating is completely etched, and the etching solution is blotted dry with dust-free paper, then washed repeatedly with deionized water and absolute ethanol, and then dried on a heating platform at 60°C to obtain graphene nanoribbons sample. The purpose of this example is to verify the effect of the etching speed of the Au(111) coating on the transfer quality of graphene nanoribbons. Raman multi-point test results show the I of the transferred graphene nanoribbons 2d / I G The value of is reduced, and some blanks appear at the same time. This indicates that the st...

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Abstract

The invention provides a method for high-cleanliness lossless transfer of a graphene nanobelt, which comprises the following steps of: growing an Au (111) layer with a certain thickness on a Mica substrate to obtain an Au (111) / Mica growth substrate; fully growing a single layer of N = 7 GNR on an Au (111) surface by using a CVD growth process to obtain an N = 7 GNR / Au (111) / Mica sample, lightly scratching the periphery of an Au (111) plating layer of the N = 7 GNR / Au (111) / Mica sample on which graphene nanobelts are grown by using a thin blade to damage the integrity of a surface amorphous carbon film layer, then adhering a certain concentration of a potassium iodide iodine solution with weak etching capability to lightly brush for several times by using a banister brush, The amorphous carbon film layer on the surface falling off, and meanwhile, exposing the N = 7 GNR / Au (111) layer, so that the subsequent separation of the Mica substrate and the Au (111) coating is facilitated. In the transferring process, a high polymer material is not used as a supporting film to assist transferring, and no impurities or defects are introduced into the graphene nanobelt in the transferring process. And meanwhile, the amorphous carbon layer is purposefully removed, so that the rapid transfer of the graphene nanobelt is realized.

Description

technical field [0001] The invention relates to the field of transfer of graphene nanobelts, in particular to a method for highly clean and non-destructive transfer of graphene nanobelts. Background technique [0002] Semiconductor devices are important basic electronic components for the manufacture of integrated circuits and chips. With the rapid development of high integration and microscale of electronic components, this will inevitably pose greater challenges to the nanoscale of electronic components. At present, the most advanced semiconductor photolithography process has reached 7nm and 5nm, and even 1nm process technology can be achieved in the laboratory. Although the gate length of the silicon material traditionally used to prepare semiconductor components is ≥5nm, it has quite ideal advantages, but when the gate length of the silicon material is less than 5nm, the more obvious "tunnel effect" will appear with the shortening of the gate length , preventing the sou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194C01B2204/02
Inventor 蔡金明陈其赞林泽斯
Owner GUANGDONG MORION NANOTECHNOLOGY CO LTD
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