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Quartz piece protective layer and preparation method thereof

A technology for protective layers and quartz parts, applied in glass manufacturing equipment, coatings, manufacturing tools, etc., can solve the problems of metal parts corrosion, safety risks, high cost, etc., to prolong life, protect quartz parts, and improve equipment utilization Effect

Pending Publication Date: 2021-11-23
LAPLACE RENEWABLE ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The second way is to introduce fluorine-containing gas such as NF 3 or ClF 3 Etc., in the process chamber and the products on the surface of the quartz parts are etched away. This method is online processing and does not need to disassemble various quartz parts, but it requires frequent processing and a large amount of NF 3 or ClF 3 This kind of high-priced gas, the product will corrode some metal parts in the reaction chamber, and the equipment needs to be installed with corresponding gas pipelines and protective measures such as dangerous gas leakage detection, and the exhaust gas containing F also needs to be treated
This method is costly and has security risks

Method used

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  • Quartz piece protective layer and preparation method thereof
  • Quartz piece protective layer and preparation method thereof
  • Quartz piece protective layer and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0070] A preparation method for a protective layer of a quartz piece, comprising the following steps:

[0071] (1) load the unloaded quartz piece into the quartz furnace tube;

[0072] (2) Control the constant temperature in the furnace tube to 450°C, and feed nitrogen to a constant pressure of 300mtorr;

[0073] (3) feed nitrogen-diluted silane and diluted oxygen;

[0074] Among them, silane and nitrogen enter the cavity after being combined, the flow ratio of silane and nitrogen is 1:19, and the flow rate of silane is 100 sccm;

[0075] Oxygen and nitrogen enter the cavity after being combined, the flow ratio of oxygen and nitrogen is 1:9, and the flow rate of oxygen is 300 sccm;

[0076] In some embodiments, the mixed gas of silane and nitrogen, the mixed gas of oxygen and nitrogen, the two mixed gases are passed into the furnace tube at the same time, in other embodiments, the mixed gas of oxygen and nitrogen is passed into first, and then the silane is passed into Mixe...

Embodiment 2

[0081] A preparation method for a protective layer of a quartz piece, comprising the following steps:

[0082] (1) load the unloaded quartz piece into the quartz furnace tube;

[0083] (2) Control the constant temperature in the furnace tube to 710°C, and feed nitrogen to a constant pressure of 400mtorr;

[0084] (3) The temperature of the TEOS source bottle is controlled at 50°C, open the valve of the TEOS (tetraethyl orthosilicate) intake pipe, and the TEOS (tetraethyl orthosilicate) liquid volatilizes into the furnace tube; maintain the furnace tube at 710°C and the pressure at 400mtorr , time 300 minutes;

[0085] Here, after the valve of TEOS is opened, the pressure in the TEOS source bottle will be stable, and the source will be ventilated through saturated vapor pressure.

[0086] In other embodiments, an inert carrier gas can also be used to carry the TEOS source, and a flow meter can also be added for precise control.

[0087] (4) Close the valve of the TEOS pipeli...

Embodiment 3

[0091] A preparation method for a protective layer of a quartz piece, comprising the following steps:

[0092] (1) load the unloaded quartz piece into the quartz furnace tube;

[0093] (2) Control the temperature in the furnace tube to a constant temperature of 560°C, and feed nitrogen to a constant pressure of 550mtorr;

[0094] (3) Pass into the silane diluted by nitrogen and the oxygen diluted by nitrogen, and the gas enters the furnace tube through the spray pipe in the furnace tube respectively to react;

[0095] (4) Oxygen and nitrogen are combined and connected to the first spray pipe in the furnace tube, the oxygen flow is 360sccm, the nitrogen flow is 2040sccm, and the feeding time is 2min;

[0096] (5) maintain the air intake of step (4), pass into the silane diluted with nitrogen to another spray pipe and be the second spray pipe simultaneously; The flow of silane is 120sccm, and the flow of nitrogen is 3880sccm, and the feeding time is 20min. A silicon oxide laye...

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Abstract

The invention discloses a quartz piece protective layer. The protective layer is located on the surface of a quartz piece, and the thermal expansion coefficient of the protective layer is between the thermal expansion coefficient of quartz and the thermal expansion coefficient of a coating layer. The invention further discloses a preparation method of the quartz piece protective layer. The method is characterized in that the protective layer is deposited through a LPCVD method or / and a spraying sintering method; or the method is characterized in that SiO2 is directly grown by adopting the LPCVD method, then the content proportion of oxygen supply substances is gradually reduced, and the proportion of coating layer substances is increased until the coating layer substances are completely grown at last. According to the quartz piece protective layer, the quartz piece protective layer (i.e., a transition layer) can isolate direct contact between the coating layer and the quartz piece; due to the existence of the transition layer, the mutual thermal stress can be reduced, the service life of the quartz piece is greatly prolonged, and the maintenance cost and the workload are reduced; and the equipment maintenance work and time are reduced, and the equipment utilization rate is improved.

Description

technical field [0001] The invention specifically relates to a protective layer for a quartz piece and a preparation method thereof. Background technique [0002] As semiconductor technology and solar photovoltaic power generation technology are getting more and more attention, the demand for related battery technology is getting higher and higher, so the requirements for related equipment are getting higher and higher, and with the requirements for cost, the demand for related equipment and consumables Increasingly demanding. The solar photovoltaic manufacturing process includes normal pressure and low pressure boron diffusion\phosphorus diffusion\annealing\oxidation and other processes, as well as low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition. Among them, chemical vapor deposition and plasma enhanced chemical vapor deposition will deposit some thin films on the inner wall of the quartz parts including the furnace tube. As the device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44C23C16/24C23C16/30C23C16/34C23C16/52C03B20/00C03C17/34
CPCC23C16/4404C23C16/402C23C16/401C23C16/24C23C16/52C23C16/345C23C16/30C03C17/3435C03B20/00
Inventor 庞爱锁林佳继刘群朱太荣张武
Owner LAPLACE RENEWABLE ENERGY TECH CO LTD