Gallium oxide nanostructure device, and production method and application thereof

A nanostructure, gallium oxide technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve the problems of weak response-recovery ability, inaccurate resistance measurement, and influence on detection effect, etc. Sensitive performance, overcoming large resistance, and reducing cost
CN113702447AActive Publication Date: 2021-11-26SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Publication Date
2021-11-26

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Abstract

The invention discloses a gallium oxide nanostructure device, and a production method and an application thereof. The production method comprises the following steps: depositing metal gallium on a gallium oxide thin film, and corroding a plurality of areas on the surface of the gallium oxide thin film by the metal gallium so as to form a plurality of nanopores in the gallium oxide thin film; and manufacturing an electrode matched with the gallium oxide thin film. According to the production method provided by the invention, the gallium oxide thin film is corroded by the metal gallium to form the nanopores, and the obtained nanopore thin film has a larger specific surface area so that more to-be-detected gas molecules in the environment can be adsorbed, the size of the device is reduced, and a high-integration-level, miniaturized and low-power-consumption detector is realized; and the production process of the nanostructure does not need additional semiconductor processing equipment for etching or corrosion, is beneficial to reducing the cost, is an in-situ corrosion process, does not introduce a new surface state and an interface state, is free of external pollution, and has the characteristics of low damage, no interface pollution and the like.
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Description

technical field

[0001] The invention relates to a thin-film gas sensor, in particular to a gallium oxide nanostructure device and its preparation method and application, belonging to the fields of electronic information and technology and semiconductor technology. Background technique

[0002] In the process of industrialization and urbanization, people pay more and more attention to air pollution caused by automobile exhaust and chemical poisonous gas; especially the gas leakage in industrial production has major safety hazards, so it is very important to effectively detect various toxic and harmful gases . Thin-film metal-oxide-semiconductor gas sensors play an important role in the field of gas detection due to their advantages of high sensitivity, simple fabrication, small size, low price, compatibility with microelectromechanical systems (MEMS) processes, and easy mass production. favored by many researchers. At present, commonly used gas sensing materials are NiO, Sn...

Claims

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