A broadband antireflection film in the visible light region and its preparation method
An anti-reflection coating and visible light technology, which is applied in sustainable manufacturing/processing, optics, optical components, etc., can solve the problems of easy peeling and separation of film layers, changes in internal stress properties, and lower refractive index to achieve excellent mechanical properties. Excellent strength and damage resistance quality, reduced reflection loss, and excellent compactness
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Embodiment 1
[0034] A preparation method for wideband increased anti-reflection film in the visible light region is carried out according to the following steps:
[0035] S1, pre-treatment
[0036] K9 optical glass was selected as the matrix, and the acetone, ethanol and deionized water were used for ultrasonic cleaning, and after drying, the ion bombardment was carried out for 10 min at a vacuum of 3Pa, and the vacuum was continued to be evacuated to 1x10 -5 pa, will SiO 2 and TiO 2 Pre-melting of the membrane;
[0037] S2, electron beam evaporation method to prepare SiO 2 Film layer and TiO 2 Membrane layer
[0038] Adjust the vacuum to 2.4×10 -3 Pa, go in O 2 , the regulated pressure is 1×10 -2 Pa, then the substrate is warmed to 240 °C, after a constant temperature of 2 h, SiO is evaporated 2 Material, deposition rate of 0.15 nm / s, and then evaporation of TiO 2 Material, TiO 2 The deposition rate is 0.5 nm / s, sio is deposited 2 and TiO 2 The thickness of the film layer is the same, both 12...
Embodiment 2
[0045] A method for preparing broadband anti-reflection film in the visible light region is carried out according to the following steps:
[0046] S1, pre-treatment
[0047] K9 optical glass was selected as the matrix, and acetone, ethanol and deionized water were used for ultrasonic cleaning, and after drying, ion bombardment was carried out under a vacuum of 2Pa, and the vacuum was continued to be pumped to 2x10 -5 pa, will SiO 2and TiO 2 Pre-melting of the membrane;
[0048] S2, electron beam evaporation method to prepare SiO 2 Film layer and TiO 2 Membrane layer
[0049] Adjust the vacuum to 3×10 -3 Pa, go in O 2 , the regulated pressure is 2×10 -2 Pa, then the substrate is warmed to 260 ° C, after constant temperature for 2 h, siO is evaporated 2 Material, deposition rate of 0.2 nm / s, and then evaporation of TiO 2 Material, TiO 2 The deposition rate is 0.5 nm / s, sio is deposited 2 and TiO 2 The thickness of the film layer is the same, both 220nm;
[0050] S3, ion-assisted dep...
Embodiment 3
[0056] A method for preparing broadband anti-reflection film in the visible light region is carried out according to the following steps:
[0057] S1, pre-treatment
[0058] K9 optical glass was selected as the matrix, and the acetone, ethanol and deionized water were used for ultrasonic cleaning in turn, and after drying, the ion bombardment was carried out under a vacuum of 2 to 3 Pa, and the vacuum was continued to be pumped to 1.5x10 -5 pa, will SiO 2 and TiO 2 Pre-melting of the membrane;
[0059] S2, electron beam evaporation method to prepare SiO 2 Film layer and TiO 2 Membrane layer
[0060] Adjust the vacuum to 2.8×10 -3 Pa, go in O 2 , the regulating pressure is 1.5×10 -2 Pa, then the substrate is warmed to 250 ° C, after constant temperature for 2 h, SiO is evaporated 2 Material, deposited at a rate of 0.18 nm / s, and then evaporated TiO 2 Material, TiO 2 The deposition rate is 0.4 nm / s, sio deposited 2 and TiO 2 The thickness of the film layer is the same, both 200nm;
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