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Application of antimony trioxide material as dielectric material between semiconductor integrated circuit layers or between metals

An antimony trioxide and integrated circuit technology, which is applied in the field of antimony trioxide material as a dielectric material between layers of semiconductor integrated circuits or between metals, can solve the problem of low thermal stability and mechanical stability, increased signal propagation delay, Problems such as poor compatibility, to achieve high temperature thermal stability, resistance to electrical breakdown, improved performance, and ultra-low dielectric constant.

Pending Publication Date: 2021-12-07
SHANGHAI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the device density of integrated circuits continues to increase and the wiring size and spacing continue to decrease, a new serious problem arises: signal propagation delays gradually increase, crosstalk noise and power dissipation caused by resistance-capacitance coupling due to wiring capacitance (including layers) Capacitance C LG and line-to-line capacitance C LL ) becomes significant; when the inter-line connection spacing is less than 0.3 μm, C LG Compared with the total capacitance, it is very small; when the connection distance between lines is less than 0.25μm, C LL becomes a major part of the total capacitance in the IC
After years of development, silicon-based low dielectric constant materials are slowly approaching the limit, while organic polymer low dielectric constant materials are not compatible with existing semiconductor processes (such as low thermal and mechanical stability). restricted

Method used

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  • Application of antimony trioxide material as dielectric material between semiconductor integrated circuit layers or between metals
  • Application of antimony trioxide material as dielectric material between semiconductor integrated circuit layers or between metals
  • Application of antimony trioxide material as dielectric material between semiconductor integrated circuit layers or between metals

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preparation example Construction

[0086] Another aspect of the present invention provides a method for preparing the antimony trioxide material used in the foregoing process of the present invention, comprising: using (1) antimony trioxide powder or (2) under vacuum conditions and an inert gas and / or oxygen atmosphere Metal antimony powder is used as a reaction source, and antimony trioxide materials with the same crystal structure, uniform composition and no defects can be obtained by depositing on the substrate. Representative results of component analysis, such as Figure 12 , Figure 13 ; representative results of single crystal crystallinity, such as Figure 14 , Figure 15 , Figure 16 , Figure 17 .

[0087] In the preparation method of antimony trioxide material, the vacuum condition for the material synthesis, that is, the pressure in the reaction is 3-500 Torr; 3-60 Torr; 60-100 Torr; 100-200 Torr; 200-300 Torr; 300-400 Torr; 500 Torr; 3-15 Torr; or 15-100 Torr. The inert gas is argon and / or n...

Embodiment 1

[0107] Two-dimensional α-phase Sb 2 o 3 Preparation of Molecular Crystal Nanosheets

[0108] (1) Synthetic equipment adopts such as Figure 5 The horizontal single temperature zone vacuum tube furnace synthesis system shown. First, 15 mg of high-purity antimony trioxide powder (α-phase Sb 2 o 3 powder) into a quartz boat, placed in the center of the quartz tube of the tube furnace, then place the substrate at a position 17 cm away from the powder raw material downstream of the air flow in the tube, and assemble and seal the device. The background was then vacuumed to 5 x 10 - 2 Below Torr, feed 100 sccm high-purity argon for 3 minutes without controlling the pressure inside the tube, and then pump the background vacuum to 5×10 - 2 Torr below. Repeat the pumping and ventilation at least twice in this way to discharge the impurity gas in the quartz tube.

[0109](2) 0 sccm of high-purity oxygen and 300 sccm of high-purity argon are introduced, and the pressure inside t...

Embodiment 2

[0111] Two-dimensional α-phase Sb 2 o 3 Preparation of Molecular Crystal Nanosheets

[0112] (1) Synthetic equipment adopts such as Figure 5 The horizontal single temperature zone vacuum tube furnace synthesis system shown. First, put 15 mg of high-purity metal antimony powder (Sb) into a quartz boat and place it in the center of the quartz tube of the tube furnace, then place the substrate at a position 20 cm away from the powder material downstream of the air flow in the tube, and assemble and seal the device. The background was then vacuumed to 5 x 10 -2 Below Torr, feed 100 sccm high-purity argon for 3 minutes without controlling the pressure inside the tube, and then pump the background vacuum to 5×10 -2 Torr below. Repeat the pumping and ventilation at least twice in this way to discharge the impurity gas in the quartz tube.

[0113] (2) 20 sccm of high-purity oxygen and 100 sccm of high-purity argon are introduced, and the pressure inside the tube is maintained a...

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Abstract

The invention relates to the technical field of integrated circuits, the technical field of nano materials and the field of microelectronics, in particular to a new application of antimony trioxide as a dielectric material between semiconductor integrated circuit layers or between metals. The antimony trioxide material is a molecular crystal and is of a two-dimensional or three-dimensional structure formed by connecting Sb4O6 cage-shaped molecules through Van der Waals force. The material is alpha-phase antimony trioxide, and has the following characteristics that (1) a dielectric constant is 1.8-2.5; (2) a band gap Eg is about 5.6 eV; (3) the material is resistant to a550 DEG C high temperature under normal pressure; and (4) the ultrahigh electric breakdown strength EB is 1.4 to 2.5 MV / cm. The material is a novel low-dielectric-constant material which is not found and developed yet, can be used as the dielectric material between the semiconductor integrated circuit layers or between the metals, and has great commercial potential and value.

Description

technical field [0001] The invention relates to the field of integrated circuit technology, the field of nanometer material technology and the field of microelectronics, especially the new use of antimony trioxide material as a dielectric material between layers or metals of semiconductor integrated circuits. Background technique [0002] For the development of integrated circuit (Integrated Circuit, IC) technology, in order to improve the performance of microprocessor (microprocessor), it is necessary to reduce the size of the device, that is, a larger device density, a larger number of devices in a single chip, and calculation speed and performance. It can be effectively improved, which is the technological development trend speculated by Moore's Law. Such as figure 1 As shown, the technology node jointly identified by IBM, Intel and their peer partners, that is, the size of the gate channel (GateChannel) of the field effect transistor, shrinking the gate channel means re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/532H01L21/02
CPCH01L23/53233H01L23/5329H01L21/02172H01L21/02269H01L23/532H01L21/02
Inventor 王宏达彭俊陆盛楠杨先中武聪聪吴楠孙兆茹
Owner SHANGHAI TECH UNIV