Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS infrared light source and preparation method thereof

An infrared light source, filamentary technology, applied in optics, light guides, optical components, etc., can solve the problems of limiting thickness, interface adhesion, affecting the practical application of thin films, etc., to reduce internal stress, improve DLC interface adhesion, low cost Effect

Pending Publication Date: 2021-12-14
SHANGHAI AEGIS IND SAFETY
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high stress of the amorphous carbon film limits its thickness, interfacial bonding force, etc., which seriously affects the practical application of the film.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS infrared light source and preparation method thereof
  • MEMS infrared light source and preparation method thereof
  • MEMS infrared light source and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The solutions of the present invention will be explained below in conjunction with examples. Those skilled in the art will understand that the following examples are only for illustrating the present invention and should not be considered as limiting the scope of the present invention. If no specific technique or condition is indicated in the examples, it shall be carried out according to the technique or condition described in the literature in this field or according to the product specification. The reagents or instruments used were not indicated by the manufacturer, and they were all commercially available conventional products. The experimental methods used are conventional methods unless otherwise specified.

[0041] Such as Figure 1-1~1-10 Shown, for the preparation method of a kind of MEMS infrared light source provided by the present invention, described preparation method comprises the following steps:

[0042] (1) Picture 1-1 It shows the oriented monocry...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an MEMS infrared light source. The infrared light source comprises a substrate and a front surface structure carried on the substrate, wherein the front surface structure sequentially comprises a double-layer dielectric layer, a tungsten heating resistor layer, an adhesion layer, a nanometer amorphous carbon layer and a passivation layer from bottom to top, the tungsten heating resistance layer comprises a wire-coiled tungsten structure, a silicon oxide layer deposited in the tungsten structure, and a metal electrode arranged on the tungsten structure. The invention also provides a corresponding preparation method. A novel infrared light source device provided by the invention has a radiation self-enhancement effect, can realize higher radiation temperature and more stable thermal response, and realizes excellent middle and far infrared radiation performance. The MEMS infrared light source is integrated in an infrared gas sensing system, is a core component of an infrared gas detection device, solves the problem of poisoning or sensitivity reduction caused by direct contact between a traditional sensor and gas, and has great application value in the aspects of environment detection and industrial and mining production safety.

Description

technical field [0001] The invention relates to the field of NDIR gas sensors, in particular to a MEMS infrared light source and a preparation method thereof. Background technique [0002] In the NDIR gas sensor, the infrared light source emits infrared light, and gas molecules that can produce dipole moment changes such as carbon dioxide, carbon monoxide, and methane are absorbed because they resonate with infrared light, and specific gas molecules will only interact with infrared light of a specific wavelength. Light resonates, and different gas concentrations will cause different energy absorbed by infrared light, so the detector can detect the change of infrared radiation energy at the other end, and use it to analyze gas composition and calculate gas concentration. Therefore, the performance of the infrared light source directly affects the performance of the infrared gas sensor. Compared with the traditional tungsten filament lamp, which limits the application range o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/3504G01N21/01B81B7/02B81C1/00B82Y15/00B82Y40/00
CPCG01N21/3504G01N21/01B81B7/02B81C1/00349B82Y15/00B82Y40/00
Inventor 甘凯仙许晴于海洋张杰
Owner SHANGHAI AEGIS IND SAFETY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com