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Method for growing graphene film on surface of copper powder

A graphene film, surface growth technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the adverse effects of graphene film quality, hinder the excellent performance of graphene, graphene grain boundaries and defects many problems, to achieve the effect of improving quality, reducing grain boundaries and defects, and shortening growth time

Pending Publication Date: 2022-01-07
SHANGHAI SIMBATT ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned growth method includes four stages of heating, annealing, growth and cooling, and takes a long time as a whole; in addition, although the above-mentioned method can obtain a graphene film with better coating on the surface of copper powder, the grown graphene film crystal The particle size is relatively small, generally only 1-2 microns, resulting in more grain boundaries and defects in graphene, which has a negative impact on the quality of graphene film and hinders the excellent performance of graphene

Method used

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  • Method for growing graphene film on surface of copper powder
  • Method for growing graphene film on surface of copper powder
  • Method for growing graphene film on surface of copper powder

Examples

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Embodiment 1

[0029] The present embodiment provides a method for growing a graphene film on the surface of copper powder, which comprises the following steps in turn:

[0030] S1: Weigh 200g of 100-mesh copper powder, put it in a ceramic boat, and spread it evenly. The above-mentioned copper powder can be in any of spherical, dendritic or flake shapes; In the center of the constant temperature zone of the vapor deposition furnace, 300 sccm of argon gas is introduced, so that the copper powder is in an argon atmosphere, and the furnace temperature is raised from room temperature to 300 ° C in the argon atmosphere; the argon gas is closed and 1 sccm of oxygen is introduced Pre-oxidize the copper powder surface and keep it warm for 10 minutes.

[0031] In this embodiment, a pre-oxidation process of copper powder is inserted in the initial heating stage of the process, that is, when the temperature is raised to a lower temperature, the oxidation treatment of copper powder is carried out first,...

Embodiment 2

[0042] The present embodiment provides a method for growing a graphene film on the surface of copper powder, which comprises the following steps in turn:

[0043] S1: Put the mixed powder of copper powder and anti-sintering agent in a quartz boat and spread it evenly. The anti-sintering agent can be one of polyvinyl alcohol, sodium chloride, magnesium oxide, graphite powder and potassium carbonate or Various anti-sintering agents can be decomposed at high temperature to reduce the degree of sintering of copper powder. Anti-sintering agents that do not decompose at high temperatures can be removed in pure water, ethanol or acidic solution after sample preparation, without affecting the final sample. quality. This embodiment specifically uses the mixed powder of copper powder and anti-sintering agent sodium chloride, weighs 200g of 15000 mesh copper powder and 40g ultrafine sodium chloride powder, and uses a powder mixer to mix the copper powder and sodium chloride powder evenly...

Embodiment 3

[0050] The present embodiment provides a method for growing a graphene film on the surface of copper powder, which comprises the following steps in turn:

[0051] S1: Weigh 200g of 200-mesh copper powder, put it in a ceramic boat, and spread it evenly. The above-mentioned copper powder can be in any of spherical, dendritic or flake shapes; In the center of the constant temperature zone of the vapor deposition furnace, 100 sccm of nitrogen gas is introduced, so that the copper powder is in an argon atmosphere, and the furnace temperature is raised from room temperature to 250 °C in the nitrogen atmosphere; the nitrogen gas is closed and 2 sccm of oxygen is introduced to the copper powder. The surface is oxidized and kept warm for 10 minutes.

[0052] S2: Turn off the oxygen after 10 minutes of heat preservation, and resume the introduction of 100sccm nitrogen again. In the argon atmosphere, the furnace temperature continues to rise to 1020°C, and then a mixed gas of methane, hy...

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Abstract

The invention discloses a method for growing a graphene film on the surface of copper powder. The method for growing the graphene film on the surface of the copper powder comprises the following steps that S1, after the copper powder or a copper powder mixture is preliminarily heated to the oxidation temperature in a chemical vapor deposition furnace, pre-oxidation treatment is conducted on the copper powder; S2, after the pre-oxidation treatment is finished and the temperature in the chemical vapor deposition furnace continues to rise to the growth temperature, reduction of the surface of the copper powder and growth operation of graphene are conducted at the same time; and S3, after the growth is finished, a growth product is cooled. According to the method for growing the graphene film on the surface of the copper powder, the growing process of the graphene film on the surface of the copper powder is simplified, and the overall process efficiency is improved. Moreover, the pre-oxidation treatment is matched with later reduction and growth operation, nucleation points on the surface of the copper powder are reduced, the grain size of the graphene film grown on the surface of the copper powder is large and can generally reach 5 micrometers-10 micrometers, grain boundaries and defects of the graphene are reduced, and the quality of the graphene is greatly improved.

Description

technical field [0001] The invention relates to the technical field of graphene material preparation, in particular to a method for growing a graphene film on the surface of copper powder. Background technique [0002] Graphene is a carbon atom with sp 2 The two-dimensional crystal formed by hybrid connection stacking has good mechanical properties and electrical properties. By combining with other materials, the excellent characteristics of graphene can be used to give the composite material more excellent performance. The combination of graphene and metal is a graphene nano A very important part of the research on composite materials, especially the research on graphene-copper composite materials is one of the hotspots in the field of material research at present. [0003] From the existing research reports and practice, it can be known that the current method of growing graphene film on the surface of copper powder is mainly chemical vapor deposition. The chemical vapor...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/02C23C16/44
CPCC23C16/26C23C16/0218C23C16/4417
Inventor 马瑜杨军沈晗睿吕雪超曹函星
Owner SHANGHAI SIMBATT ENERGY TECH CO LTD
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