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Semiconductor chilling plate and application thereof in real-time fluorescent quantitative PCR instrument

A technology of real-time fluorescence quantification and refrigeration sheet, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, and specific-purpose bioreactors/fermenters, etc., which can solve the defects of detection instruments, the troubles of product quality inspection of manufacturers, and the lack of refrigeration Problems such as sheet performance testing equipment, etc., to achieve high Seebeck coefficient, excellent cooling effect, and high thermoelectric conversion efficiency

Active Publication Date: 2022-01-07
HANGZHOU ANYU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Domestic manufacturers of semiconductor refrigeration chips need to spend a lot of money on performance testing instruments to import foreign instruments, and most of the self-developed testing instruments have defects. The lack of suitable refrigeration chip performance testing instruments brings these manufacturers product quality testing. great trouble

Method used

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  • Semiconductor chilling plate and application thereof in real-time fluorescent quantitative PCR instrument
  • Semiconductor chilling plate and application thereof in real-time fluorescent quantitative PCR instrument
  • Semiconductor chilling plate and application thereof in real-time fluorescent quantitative PCR instrument

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037]A method for preparing a thermoelectric material, comprising the steps of:

[0038] According to the element molar ratio of 1:2.8:12:0.2:0.5, y contains Eu and Nd with a molar mass of a+b=1, and a is 0.3, and b is 0.7; the metals Co, Fe, Sb, Ru, Eu and Nd are placed in the quartz tube, wherein before the quartz tube is used, a layer of carbon film is attached to the inner wall of the quartz tube by pyrolysis of acetone to prevent the reaction of the rare earth metal bath quartz tube; -3 Under the condition of Pa vacuum, 15kPa of high-purity argon gas is introduced, and then sealed, and the sealed quartz tube is placed in a high-frequency induction furnace for melting. ℃, keep warm for 4h, then slowly rise to 1100°C at a rate of 1°C / min, keep warm for 26h, cool to 950°C, keep warm for 24h, take it out quickly and transfer it to a water pool for quenching, smash the quartz tube, and take out the smelted The sample was packaged again under the same conditions, annealed at ...

Embodiment 2

[0040] A method for preparing a thermoelectric material, comprising the steps of:

[0041] According to the element molar ratio of 1:2.7:12:0.3:0.8, y contains Eu and Nd with a molar mass of a+b=1, and a is 0.2, and b is 0.8; the metals Co, Fe, Sb, Ru, Eu and Nd are placed in the quartz tube, wherein before the quartz tube is used, a layer of carbon film is attached to the inner wall of the quartz tube by pyrolysis of acetone to prevent the reaction of the rare earth metal bath quartz tube; - 3 Under the condition of Pa vacuum, 20kPa high-purity argon gas is introduced, and then sealed, and the sealed quartz tube is placed in a high-frequency induction furnace for melting. ℃, keep warm for 3h, then slowly rise to 1150°C at a rate of 1°C / min, keep warm for 24h, cool to 1000°C, keep warm for 24h, take it out quickly and transfer it to a water pool for quenching, smash the quartz tube, and take out the smelted The sample was packaged again under the same conditions, annealed at...

Embodiment 3

[0043] A method for preparing a thermoelectric material, comprising the steps of:

[0044] According to the element molar ratio of 1:2.7:12:0.3:0.8, y contains Eu and Nd with a molar mass of a+b=1, and a is 0.5, and b is 0.5; the metals Co, Fe, Sb, Ru, Eu and Nd are placed in the quartz tube, wherein before the quartz tube is used, a layer of carbon film is attached to the inner wall of the quartz tube by pyrolysis of acetone to prevent the reaction of the rare earth metal bath quartz tube; - 3 Under the condition of Pa vacuum, 20kPa high-purity argon gas is introduced, and then sealed, and the sealed quartz tube is placed in a high-frequency induction furnace for melting. ℃, keep warm for 3h, then slowly rise to 1150°C at a rate of 1°C / min, keep warm for 24h, cool to 1000°C, keep warm for 24h, take it out quickly and transfer it to a water pool for quenching, smash the quartz tube, and take out the smelted The sample was packaged again under the same conditions, annealed at...

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Abstract

The invention discloses a semiconductor chilling plate and application of the semiconductor chilling plate in a real-time fluorescent quantitative PCR instrument. A thermoelectric material is cut into an element, and the element is used as upper electrodes to prepare the semiconductor chilling plate. The composition formula of the thermoelectric material is (EuaNdb)yRuxFe<3-x>CoSb12, wherein a + b = 1, x is greater than or equal to 0.1 and less than or equal to 0.4, and y is greater than or equal to 0.2 and less than or equal to 0.8. The preparation method comprises the steps of placing metals Co, Fe, Sb, Ru, Eu and Nd in a quartz tube according to an atomic ratio, carrying out sealed smelting under a vacuum condition, then rapidly taking out and quenching, taking out a sample, packaging, annealing, taking out and grinding under the same condition, placing in a stone mill mold, and carrying out SPS smelting under vacuum to prepare the thermoelectric material. The prepared semiconductor chilling plate has a high Seebeck coefficient, a high ZT value and high density and low thermal diffusivity, and the semiconductor chilling plate has an excellent cooling effect on electronic elements.

Description

technical field [0001] The invention belongs to the field of refrigerating devices, in particular to a semiconductor refrigerating sheet and its application in a real-time fluorescent quantitative PCR instrument. Background technique [0002] In military, medical and scientific research, it is often necessary to achieve a high-precision low-temperature environment in a small space to meet specific applications. The traditional mechanical compression refrigeration method is not easy due to its large size, high energy consumption, serious pollution, and loud noise. Control and other shortcomings cannot meet the refrigeration requirements. The semiconductor refrigeration technology based on the Peltier effect has the characteristics of small size, fast cooling, no pollution, and high precision. It is the best solution for this field. However, how to improve semiconductor refrigeration efficiency and control accuracy is not yet mature enough. [0003] On the other hand, as semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/18H01L35/34H01L23/38C12M1/38C12M1/34C12M1/02C12M1/00B01L7/00G01N21/64
CPCH01L23/38G01N21/64G01N21/6428B01L7/52H10N10/853H10N10/01
Inventor 章贤骏凌建鸿翟致超赵平平
Owner HANGZHOU ANYU TECH CO LTD
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