Preparation method of rare earth ion doped ITO target material

A technology of rare earth ions and targets, which is applied in the field of ITO targets, can solve the problems of lack of process methods, etc., and achieve the effect of improving carrier mobility, high dispersion, and high density

Pending Publication Date: 2022-02-11
WUHU YINGRI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is a lack of corresponding process methods for doping rare earth ions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] This embodiment provides a method for preparing a rare earth ion-doped ITO target, the steps are as follows:

[0026] S1: Mix indium oxide and tin oxide powder at a mass ratio of 97:3, and then add 0.5wt.% rare earth oxide powder; then carry out coarse grinding, the diameter of coarse grinding zirconium beads is 7mm, and the grinding time is 10 hours. The speed of the mixer is 70rpm; self-circulation fine grinding after coarse grinding, the diameter of the fine grinding zirconium beads is 1.0mm, the speed of the main machine is 1100rpm, and the flow rate of the feeding pump is 1000L / min; after fine grinding, nano-scale sand grinding is carried out, and the diameter of the zirconium beads of the nano-scale sand mill is 0.1 mm, the speed of the main machine is 1600rpm, the flow rate of the feed pump is 550L / min, and the dispersant is added at the same time; after that, the sieve is 300 mesh, the sieved slurry is transferred to the glue mixing tank, and the binder is added ...

Embodiment 2

[0037] This embodiment provides a method for preparing a rare earth ion-doped ITO target, the steps are as follows:

[0038] S1: Mix indium oxide and tin oxide powders at a mass ratio of 95:5, then add 0.5wt.% rare earth oxide powder, and then conduct coarse grinding. The diameter of coarse grinding zirconium beads is 7 mm, and the grinding time is 10 hours. The speed of the mixer is 70rpm; self-circulation fine grinding after coarse grinding, the diameter of the fine grinding zirconium beads is 1.0mm, the speed of the main machine is 1100rpm, and the flow rate of the feeding pump is 1000L / min; after fine grinding, nano-scale sand grinding is carried out, and the diameter of the zirconium beads of the nano-scale sand mill is 0.1 mm, the speed of the main machine is 1600rpm, the flow rate of the feed pump is 550L / min, and the dispersant is added at the same time; after that, the sieve is 300 mesh, the sieved slurry is transferred to the glue mixing tank, and the binder is added ...

Embodiment 3

[0050] This embodiment provides a method for preparing a rare earth ion-doped ITO target, the steps are as follows:

[0051] S1: Mix indium oxide and tin oxide powder at a mass ratio of 93:7, then add 0.5wt.% rare earth oxide powder, and then conduct coarse grinding. The diameter of coarse grinding zirconium beads is 7mm, and the grinding time is 10 hours. The speed of the mixer is 70rpm; self-circulation fine grinding after coarse grinding, the diameter of the fine grinding zirconium beads is 1.0mm, the speed of the main machine is 1100rpm, and the flow rate of the feeding pump is 1000L / min; after fine grinding, nano-scale sand grinding is carried out, and the diameter of the zirconium beads of the nano-scale sand mill is 0.1 mm, the speed of the main machine is 1600rpm, the flow rate of the feed pump is 550L / min, and the dispersant is added at the same time; after that, the sieve is 300 mesh, the sieved slurry is transferred to the glue mixing tank, and the binder is added a...

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PUM

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Abstract

The invention provides a preparation method of a rare earth ion doped ITO target material, and belongs to the field of ITO target materials. The powder of the ITO target material is prepared through the steps of powder vacuum feeding, powder coarse grinding, powder accurate grinding, powder nanoscale sanding, slurry glue preparation, spray granulation and mixing and sieving, then dry pressing and cold isostatic pressing forming, biscuit turning, sintering, machining and binding detection are conducted, and the rare earth oxide powder is added, so that the problems that the high-indium-tin-ratio ITO target material is not high in density and easy to crack are solved, the carrier mobility of the film is improved, and the material can be better applied to the solar cell industry.

Description

technical field [0001] The invention relates to the field of ITO target materials, in particular to a preparation method of rare earth ion doped ITO target materials. Background technique [0002] Indium tin oxide target (ITO) target film is widely used in solar energy, liquid crystal display, touch screen, semiconductor display devices and other fields due to its excellent characteristics such as high transmittance, low impedance, and high weather resistance. The ITO target is the main raw material for preparing ITO thin film materials by magnetron sputtering. The ITO target film required by the solar cell industry needs to have the characteristics of low resistivity, high carrier mobility, high light transmittance, and good film uniformity. Different ratios of ITO targets can be prepared by adjusting the ratio of indium oxide and tin oxide to achieve performance control of ITO films, such as square resistance, transmittance, carrier concentration, carrier mobility, etc. ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/3414C23C14/35C23C14/086
Inventor 王志强马建保林燕明曾墩风陶成毕荣锋
Owner WUHU YINGRI TECH CO LTD
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