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Preparation method of ruthenium oxide for thick-film resistor

A technology of thick-film resistors and ruthenium oxide, which is applied in the field of powder metallurgy, can solve the problems of easy agglomeration of ruthenium oxide, poor performance of ruthenium oxide, and large pollution, and achieve the effects of simple preparation process, high yield and large output

Active Publication Date: 2022-03-01
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method controls the ball milling of the precursor ruthenium salt, combined with controlling the morphology of the ruthenium powder, and then calcines in the air to obtain a spherical ruthenium oxide powder with a large particle size, which prevents the ruthenium oxide powder from inheriting the morphology of the flake ruthenium powder and ensures The spherical shape of ruthenium oxide powder is improved, which makes it suitable for thick film resistors, and solves the problems of poor performance of ruthenium oxide prepared by direct calcination of ruthenium powder and easy agglomeration and large pollution of ruthenium oxide prepared by liquid phase chemical synthesis.

Method used

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  • Preparation method of ruthenium oxide for thick-film resistor
  • Preparation method of ruthenium oxide for thick-film resistor

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Such as figure 1 As shown, this embodiment includes the following steps:

[0029] Step 1, mix trichloride and ammonium chloride according to the mass ratio of 1:4 and then carry out ball milling, then place in a ball mill tank and ball mill for 2 hours at a speed of 500r / min, and transfer the obtained ball mill powder into a drying box at 120 Dry at ℃, then place in a ball mill jar and ball mill for 1 hour at a speed of 600r / min to obtain a mixed powder;

[0030] Step 2. Place the mixed powder obtained in Step 1 in a tube furnace, and heat it for 2 hours in a hydrogen atmosphere at a reduction temperature of 600° C. for calcination and reduction to obtain flake ruthenium powder;

[0031] Step 3, placing the flaky ruthenium powder obtained in step 2 in a ball mill jar at a speed of 800r / min for ball milling for 2h to obtain nano ruthenium powder;

[0032] Step 4. Place the nano-ruthenium powder obtained in step 3 in a tube furnace, and heat it for 2 hours in an air atm...

Embodiment 2

[0035] Such as figure 1 As shown, this embodiment includes the following steps:

[0036] Step 1, mix trichloride and ammonium chloride according to the mass ratio of 1:4 and then carry out ball milling, then place in a ball mill jar and ball mill for 3 hours at a speed of 400r / min, and transfer the obtained ball mill powder into a dry box at 150 Dry at ℃, then place in a ball mill jar and ball mill for 2 hours at a speed of 700r / min to obtain a mixed powder;

[0037] Step 2. Place the mixed powder obtained in Step 1 in a tube furnace, and heat it for 2 hours in a hydrogen atmosphere at a reduction temperature of 500° C. for calcination and reduction to obtain flake ruthenium powder;

[0038] Step 3, placing the flaky ruthenium powder obtained in step 2 in a ball mill jar at a speed of 800r / min for ball milling for 4h to obtain nano ruthenium powder;

[0039] Step 4. Place the nano-ruthenium powder obtained in step 3 in a tubular furnace, and heat it for 2 hours in an air atm...

Embodiment 3

[0042] Such as figure 1 As shown, this embodiment includes the following steps:

[0043] Step 1, mix trichloride and ammonium chloride according to the mass ratio of 1:4 and then carry out ball milling, then place in a ball mill jar and ball mill for 3 hours at a speed of 500r / min, and transfer the obtained ball mill powder into a drying box at 150 Dry at ℃, then place in a ball mill jar and mill at a speed of 700r / min for 1 hour to obtain a mixed powder;

[0044] Step 2. Place the mixed powder obtained in Step 1 in a tube furnace, and heat it for 4 hours in a hydrogen atmosphere at a reduction temperature of 700° C. for calcination and reduction to obtain flake ruthenium powder;

[0045] Step 3, placing the flaky ruthenium powder obtained in step 2 in a ball mill jar at a speed of 900r / min for ball milling for 3h to obtain nano ruthenium powder;

[0046] Step 4. Place the nanometer ruthenium powder obtained in step 3 in a tubular furnace, and heat it for 4 hours in an air a...

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Abstract

The invention discloses a preparation method of ruthenium oxide for a thick-film resistor. The method comprises the following steps: 1, mixing trichloro-chemotherapy and ammonium chloride, and carrying out ball milling to obtain mixed powder; 2, calcining and reducing the mixed powder to obtain flaky ruthenium powder; 3, carrying out ball milling on the flaky ruthenium powder to obtain nano ruthenium powder; and 4, calcining the nano ruthenium powder in the air to obtain the ruthenium oxide for the thick film resistor. The large-particle-size sphere-like ruthenium oxide powder is obtained by controlling the ball milling of the precursor ruthenium salt, controlling the morphology of the ruthenium powder and calcining in the air, so that the ruthenium oxide powder is prevented from inheriting the morphology of flaky ruthenium powder, the sphere-like morphology of the ruthenium oxide powder is ensured, the ruthenium oxide powder is suitable for the thick-film resistor, and meanwhile, the preparation method is simple in process and low in cost. The method is high in yield, large in yield, environment-friendly and easy for industrial production.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, and in particular relates to a preparation method of ruthenium oxide for thick film resistors. Background technique [0002] With the rapid development of modern technology, especially high-end technologies such as electronic information and aerospace, thick film hybrid integrated circuits are an important part of integrated circuits. system. Thick-film hybrid integrated circuits can be referred to as thick-film hybrid circuits or thick-film circuits for short, that is, through screen printing and subsequent sintering processes, interconnected wires, resistors, inductors, and other circuits that meet certain functional technical requirements are produced on an insulating substrate. unit. Ruthenium oxide is an important raw material in the production of high-performance thick-film hybrid integrated circuits, so the demand for high-performance ruthenium oxide has increased sharply. At ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G55/00B22F9/22B22F1/068B22F1/054B22F9/04
CPCC01G55/004B22F9/22B22F9/04B22F2009/043C01P2004/62C01P2004/61C01P2006/12C01P2004/32C01P2004/03Y02P20/10
Inventor 赵盘巢张卜升陈昆昆郭俊秋黄钰杰
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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