Method for depositing activated film on copper surface by adopting reverse displacement deposition liquid

A technology for depositing liquid and copper surfaces, applied in liquid chemical plating, final product manufacturing, coating, etc., can solve the problems of unfavorable chemical nickel plating and phosphorus, and achieve the effects of reduced activation cost, excellent corrosion resistance, and simple composition

Active Publication Date: 2022-03-11
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, sulfur is not conducive to the occurrence of electroless nickel and phosphorus, and it needs to be treated with an activation solution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for depositing activated film on copper surface by adopting reverse displacement deposition liquid
  • Method for depositing activated film on copper surface by adopting reverse displacement deposition liquid
  • Method for depositing activated film on copper surface by adopting reverse displacement deposition liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1 A method for depositing an activated film on a copper surface using a reverse displacement deposition solution, comprising the following steps:

[0030] (1) Immerse the copper substrate in an alkaline chemical degreasing solution at 35°C and stir for 5 minutes; after fully washing the copper substrate treated with alkaline chemical degreasing with water, immerse it in an acidic etching solution at 25°C for 1.5 minutes; then take it out and Rinse sufficiently with water to obtain a cleaned copper substrate.

[0031] Among them: Alkaline chemical degreasing liquid is prepared by dissolving 18g of sodium hydroxide, 55g of sodium carbonate, and 6g of sodium silicate in 1L of pure water.

[0032] The acidic etching solution is prepared by dissolving 12g of sulfuric acid and 55g of sodium persulfate in 1L of pure water.

[0033] ⑵ Preparation of reverse displacement deposition solution:

[0034] Add 7g of nickel chloride and 1900g of sodium iodide into 1L of pu...

Embodiment 2

[0039] Embodiment 2 A method for depositing an activated film on a copper surface using a reverse displacement deposition solution, comprising the following steps:

[0040] (1) Immerse the copper substrate in an alkaline chemical degreasing solution at 62°C and stir for 10 minutes; after fully cleaning the copper substrate treated with alkaline chemical degreasing with water, immerse it in an acidic etching solution at 30°C for 5 minutes; then take it out and Rinse sufficiently with water to obtain a cleaned copper substrate.

[0041] Among them: Alkaline chemical degreasing liquid is prepared by dissolving 24g of sodium hydroxide, 95g of sodium carbonate, and 10g of sodium silicate in 1L of pure water.

[0042] The acidic etching solution is prepared by dissolving 49g of sulfuric acid and 98g of sodium persulfate in 1L of pure water.

[0043] ⑵ Preparation of reverse displacement deposition solution:

[0044] Add 95g of nickel sulfate and 550g of potassium iodide into 1L of...

Embodiment 3

[0046] Embodiment 3 A method for depositing an activated film on a copper surface using a reverse displacement deposition solution, comprising the following steps:

[0047] (1) Immerse the copper substrate in an alkaline chemical degreasing solution at 45°C and stir for 7 minutes; after fully cleaning the copper substrate treated with alkaline chemical degreasing with water, immerse it in an acidic etching solution at 24°C for 3 minutes; then take it out and Rinse sufficiently with water to obtain a cleaned copper substrate.

[0048] Among them: Alkaline chemical degreasing liquid is prepared by dissolving 20g of sodium hydroxide, 75g of sodium carbonate, and 7.5g of sodium silicate in 1L of pure water.

[0049]The acidic etching solution is prepared by dissolving 35g of sulfuric acid and 76g of sodium persulfate in 1L of pure water.

[0050] ⑵ Preparation of reverse displacement deposition solution:

[0051] Add 20g of nickel nitrate, 25g of nickel acetate, 300g of sodium i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for depositing an activated film on a copper surface by adopting reverse displacement deposition liquid, which comprises the following steps of: (1) performing alkaline chemical oil removal treatment and acid erosion treatment on a copper substrate, and fully cleaning with water to obtain a cleaned copper substrate; (2) preparing a reverse displacement deposition liquid: adding 5-100g of nickel salt or cobalt salt and 500-2000g of a complexing agent into 1L of pure water, and uniformly stirring to obtain the reverse displacement deposition liquid; and (3) the cleaned copper substrate is directly immersed in the reverse replacement deposition liquid for activated film deposition, after deposition is completed, the copper substrate is fully cleaned and then is blow-dried through compressed air, and the activated film is obtained. The method has the advantages that the anti-replacement deposition liquid is simple in composition, few in operation process, low in cost and the like, the prepared nickel or cobalt activated thin film has an excellent activation effect, and a compact chemical nickel-phosphorus coating with excellent corrosion resistance can be obtained on the surface of the nickel or cobalt activated thin film.

Description

technical field [0001] The invention relates to a method for preparing an activated thin film on a copper surface, in particular to a method for depositing an activated thin film on a copper surface by using a reverse displacement deposition solution. Background technique [0002] Due to its excellent conductivity and solderability, copper has become the main conductive wiring material for printed circuit boards. However, copper is prone to oxidation and corrosion, resulting in frequent failures of printed circuit boards. The preparation of non-magnetic nickel-phosphorous coating on the copper surface by electroless plating can significantly improve the anti-oxidation and corrosion resistance of copper, but the catalytic oxidation of hypophosphite, the reducing agent used in electroless nickel-phosphorous plating, on the copper surface has high energy. Therefore, in order to realize electroless nickel-phosphorus plating on the copper surface, it is necessary to perform pall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C18/18C23C18/32
CPCC23C18/1844C23C18/32Y02P70/50
Inventor 张俊彦张兴凯王永富张斌胡冠群
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products