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Etching solution

An etching solution and etching technology, applied in the field of etching solution, can solve the problems of molybdenum metal residue and other problems, and achieve the effect of stable properties, good etching profile and inhibition of diffusion

Pending Publication Date: 2022-03-15
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of molybdenum metal residues produced when etching the copper / molybdenum metal film layer of multilayer structure in the prior art, the application provides an etching solution, including the following components: 12-22% by mass Hydrogen peroxide; 0.5-4% mass percent chelating agent; 0.1-2.5 mass percent etching inhibitor; 0.1-5 mass percent etchant; 0.01-2 mass percent residue remover; and solvent

Method used

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific implementations described here are only used to illustrate and explain the present application, and are not intended to limit the present application.

[0021] An embodiment of the present application provides an etching solution, which will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.

[0022] In order to solve ...

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Abstract

The etching liquid comprises the following components in percentage by mass: 12-22% of hydrogen peroxide; 0.5-4% by mass of a chelating agent; 0.1 to 2.5% by mass of an etching inhibitor; 0.1 to 5% by mass of an etching agent; 0.01-2% by mass of a residue removal agent; the etching agent can be used for etching a copper / molybdenum metal film layer with a multi-layer structure in a large area under the condition that the fluorine content does not need to be increased, not only can the phenomenon that copper metal is diffused on an insulating film be inhibited, but also molybdenum metal residues can be effectively removed, and the etching solution is stable in property, moderate in etching rate, good in etching outline and high in etching efficiency. And the yield of products can be effectively improved.

Description

【Technical field】 [0001] The present application relates to the field of etching, in particular to an etching solution. 【Background technique】 [0002] The satellite circuit of a thin-film transistor liquid crystal display (TFT-LCD) is formed on a substrate containing a conductive metal film such as aluminum, aluminum alloy, copper or copper alloy, or a silicon oxide film and a silicon nitride film. After waiting for the insulating film, apply photoresist on the above film layer, irradiate light through the textured photomask to form the photoresist with the desired texture, and then transfer the metal film or insulating film under the photoresist by dry etching or wet etching Texture, stripping off unwanted photoresist to complete a series of photolithography processes. Large display grating and data metal traces use environmentally friendly copper metal, which has less resistance than traditional aluminum and chrome traces. [0003] But the adhesion between copper and gl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26C23F1/44
CPCC23F1/18C23F1/26C23F1/44
Inventor 李恩庆康明伦
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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