Etching solution

Abstract

The etching liquid comprises the following components in percentage by mass: 12-22% of hydrogen peroxide; 0.5-4% by mass of a chelating agent; 0.1 to 2.5% by mass of an etching inhibitor; 0.1 to 5% by mass of an etching agent; 0.01-2% by mass of a residue removal agent; the etching agent can be used for etching a copper/molybdenum metal film layer with a multi-layer structure in a large area under the condition that the fluorine content does not need to be increased, not only can the phenomenon that copper metal is diffused on an insulating film be inhibited, but also molybdenum metal residues can be effectively removed, and the etching solution is stable in property, moderate in etching rate, good in etching outline and high in etching efficiency. And the yield of products can be effectively improved.

Description

【Technical field】 [0001] The present application relates to the field of etching, in particular to an etching solution. 【Background technique】 [0002] The satellite circuit of a thin-film transistor liquid crystal display (TFT-LCD) is formed on a substrate containing a conductive metal film such as aluminum, aluminum alloy, copper or copper alloy, or a silicon oxide film and a silicon nitride film. After waiting for the insulating film, apply photoresist on the above film layer, irradiate light through the textured photomask to form the photoresist with the desired texture, and then transfer the metal film or insulating film under the photoresist by dry etching or wet etching Texture, stripping off unwanted photoresist to complete a series of photolithography processes. Large display grating and data metal traces use environmentally friendly copper metal, which has less resistance than traditional aluminum and chrome traces. [0003] But the adhesion between copper and gl...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of molybdenum metal residues produced when etching the copper / molybdenum metal film layer of multilayer structure in the prior art, the application provides an etching solution, including the following components: 12-22% by mass Hydrogen peroxide; 0.5-4% mass percent chelating agent; 0.1-2.5 mass percent etching inhibitor; 0.1-5 mass percent etchant; 0.01-2 mass percent residue remover; and solvent

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