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Optically transparent nonvolatile transistor memory and preparation method thereof

An optically transparent and non-volatile technology, applied in the field of memory, can solve the problems of poor process continuity and high price, and achieve the effects of good working reliability and working stability, low preparation cost and good repeatability

Pending Publication Date: 2022-03-18
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these reported transparent memories use atomic layer deposition technology or vacuum magnetron sputtering technology to prepare transparent oxide semiconductors or oxide storage functional layers [Adv.Funct.Mater.2010,20,921; ACS Nano 2012,6 ,7879; ACSAppl.Mater.Interfaces 2019,11,35169]; Related technical equipment is expensive; and the preparation of multi-layer thin films of memory device structures uses different technical processes, and the process continuity is not good

Method used

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  • Optically transparent nonvolatile transistor memory and preparation method thereof
  • Optically transparent nonvolatile transistor memory and preparation method thereof
  • Optically transparent nonvolatile transistor memory and preparation method thereof

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preparation example Construction

[0030] The present invention also provides a method for preparing an optically transparent nonvolatile transistor memory described in the above technical solution, comprising the following steps:

[0031] (1) Commercially purchased glass with patterned indium tin oxide, polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, etc. as a substrate; on the substrate, Patterned indium tin oxide thin film as source-drain electrodes;

[0032](2) configure the polymer semiconductor solution, prepare the polymer semiconductor layer with the solution method (spin coating, scraping, drop coating) process on the surface of the source-drain electrode of the step (1); then heat treat the semiconductor layer , to remove the residual solvent in the polymer semiconductor layer, the temperature of the heat treatment is preferably 60-120°C; the time is preferably 10-120 minutes; the concentration of the polymer semiconductor solution is preferably 0.2%-1% by mass; The adjustment...

Embodiment 1

[0039] This embodiment provides an optically transparent non-volatile transistor memory, which is a top-gate structure, and is composed of a substrate, a source-drain electrode, a polymer semiconductor layer, a ferroelectric gate insulating layer and a gate electrode in sequence from bottom to top .

[0040] Wherein, the substrate is glass covered with patterned indium tin oxide, which is purchased from the market; the source-drain electrode is indium tin oxide with a thickness of 50 nanometers; the polymer semiconductor layer is poly{2,2'-[(2, 5-bis(2-octyldodecyl)-3,6-dioxy-2,3,5,6-tetrahydropyrrole[3,4-c]pyrrole-1,4-diacyl)] Dithiophenyl-5,5'-diacylthiophene[3,2-b]thiophene-2,5-diacyl} film with a thickness of 40 nanometers; the ferroelectric grid insulating layer is poly(vinylidene fluoride-trifluoro Polyethylene) film with a thickness of 650 nanometers; the gate electrode is a poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate film with a thickness of 170 nanometers....

Embodiment 2

[0048] This embodiment provides an optically transparent non-volatile transistor memory, which is a top-gate structure, which consists of a substrate, a source-drain electrode, a polymer semiconductor layer, a ferroelectric gate insulating layer, and a gate electrode in sequence from bottom to top. composition.

[0049] Wherein, the substrate is polyethylene terephthalate covered with patterned indium tin oxide, which is purchased from the market; the source-drain electrodes are patterned indium tin oxide films with a thickness of 120 nanometers; the polymer semiconductor layer is poly[(5-fluoro-2,1,3-benzothiazole-4,7-diacyl)(4,4-hexadecyl-4H-cyclopenta[2,1-b:3,4 -b']dithiophene-2,6-diacyl)(6-fluoro-2,1,3-benzothiadiazole)-4,7-diacyl)(4,4-hexadecyl- 4H-Cyclopentane[2,1-b:3,4-b']dithiophenyl-2,6-diacyl)] film with a thickness of 130 nm; the ferroelectric gate insulating layer is vinylidene fluoride- The trifluoroethylene-trifluorochloroethylene copolymer film has a thickness...

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Abstract

The invention discloses an optically transparent nonvolatile transistor memory and a preparation method thereof, and belongs to the technical field of memories. The memory is of a top gate structure and sequentially comprises a substrate, a source-drain electrode, a polymer semiconductor layer, a ferroelectric gate insulating layer and a gate electrode from bottom to top, wherein the substrate, the source-drain electrode, the polymer semiconductor layer, the ferroelectric gate insulating layer and the gate electrode are all made of optical transparent materials, and the polymer semiconductor layer, the ferroelectric gate insulating layer and the gate electrode are all prepared by a solution method; the electrical characteristics of the memory tested in a darkroom and an illumination environment show good repeatability, which indicates that the memory has good optical stability, a remarkable information storage function and good working reliability and stability; the whole preparation process of the memory adopts an all-solution process, and the processing temperature is lower than 150 DEG C. The memory has the advantages of simple process, good process continuity, low-temperature preparation, cheap preparation equipment and low preparation cost, and the commercial competitiveness of the memory can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a nonvolatile transistor memory with high optical transparency in the visible light region and a preparation method thereof. Background technique [0002] As the carrier of information storage—memory occupies a pivotal position in the information industry. As a terminal for information display—display also occupies a vital position in the information industry chain. In the past two decades, the technological update and performance improvement of memory and display have promoted the rapid development of the entire information industry, and also prompted consumers to have more diversified demands for information products. [0003] According to whether the information is long-term and persistent storage, the memory is divided into two categories: volatile memory and non-volatile memory. So far, the vast majority of memories use metals as electrodes, which have significa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K71/15H10K71/12H10K10/471
Inventor 王伟齐伟皓
Owner JILIN UNIV
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