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Calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, and preparation method, application and temperature field thereof

A technology of gadolinium gallium garnet and garnet phase is applied in the field of crystals and optical devices, which can solve problems such as unfavorable crystal growth and reduction, and achieve the effects of avoiding crystal cracking, overcoming liquid flow effect, and inhibiting volatilization.

Pending Publication Date: 2022-03-29
YANGTZE OPTICAL FIBRE & CABLE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, its preparation method and temperature field, the purpose of which is to prepare gadolinium The lattice constant of the gallium garnet crystal, thereby matching with the Bi:RIG film, reducing the mismatch rate with the Bi:RIG film, thus facilitating the growth of the Bi:RIG film, thus solving the existing problem The mismatch rate between gadolinium gallium garnet and Bi-doped: RIG film exceeds 0.05%, which is not conducive to the technical problem of crystal growth

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  • Calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, and preparation method, application and temperature field thereof
  • Calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, and preparation method, application and temperature field thereof
  • Calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, and preparation method, application and temperature field thereof

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preparation example Construction

[0037]The preparation method of the calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal provided by the present invention comprises the following steps:

[0038] (1) Configure polycrystalline raw materials: take the raw materials required for crystal growth according to the stoichiometric ratio of the molecular formula of the calcium-magnesium-zirconium-doped gadolinium-gallium-garnet magneto-optical crystal, mix them in a mixer, and press the isostatic press After the tablet is pressed, it is placed in a muffle furnace for high-temperature sintering; wherein the excess of Ga2O3 is 1-4 wt%, preferably 3%.

[0039] The raw material required for crystal growth is gadolinium oxide Gd 2 o 3 (99.999%), gallium oxide Ga 2 o 3 (99.999%), Calcium Oxide CaO (99.99%), Magnesium Oxide MgO (99.99%) and Zirconia ZrO 2 (99.99%), each raw material is according to molecular formula Gd 3- x Ca x Ga 5-x-2y Mg y Zr x+y o 12 (0.35≤x≤0.4, 0.25≤y≤0.3) stoichiometric ratio...

Embodiment 1

[0051] A specific preparation steps of calcium magnesium zirconium doped gadolinium gallium garnet SGGG crystal:

[0052] (1) Synthesis of polycrystalline raw materials: according to Gd 3-x Ca x Ga 5-x-2y Mg y Zr x+y o 12 The stoichiometric ratio of (x=0.35, y=0.3) accurately weighs Gd with a purity greater than 99.99%. 2 o 3 , Ga 2 o 3 , CaO, MgO and ZrO 2 Raw material, after weighing the raw material, put it into a clean mixing barrel, mix it in the mixer for 24 hours, then put it into a rubber mold customized according to the size of the crucible, and use an isostatic press to press at 200Mpa. After pressing, it is placed in a corundum crucible, put into a muffle furnace, and calcined at 1300°C for 12-18 hours by high-temperature sintering. The above 99.99% high-purity Gd 2 o 3 , Ga 2 o 3 , CaO, MgO and ZrO 2 It needs to be placed in an oven to remove excess moisture before use.

[0053] (2) The size is φ80*80mm 3 The iridium crucible is used as the contain...

Embodiment 2

[0059] A specific preparation steps of calcium magnesium zirconium-doped gadolinium gallium garnet SGGG crystal:

[0060] (1) Synthesis of polycrystalline raw materials: according to Gd 3-x Ca x Ga 5-x-2y Mg y Zr x+y o 12 The stoichiometric ratio of (x=0.4, y=0.25) accurately weighs Gd with a purity greater than 99.99%. 2 o 3 , Ga 2 o 3 , CaO, MgO and ZrO 2 Raw material, after weighing the raw material, put it into a clean mixing barrel, mix it in the mixer for 24 hours, then put it into a rubber mold customized according to the size of the crucible, and press it at 200Mpa with an isostatic press. After pressing, place it in a corundum crucible, put it into a muffle furnace, and calcine it at 1300°C for 12-18 hours by high-temperature sintering. The above 99.99% high-purity Gd 2 o 3 , Ga 2 o 3 , CaO, MgO and ZrO 2 It needs to be placed in an oven to remove excess moisture before use.

[0061] (2) The size is φ80*80mm 3The iridium crucible is used as the contai...

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Abstract

The invention discloses a calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal and a preparation method and a temperature field thereof. The calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal provided by the invention is a cubic system garnet phase, and Gd < 3 + > (0.106 nm) in a dodecahedron is partially substituted by a cation Ca < 2 + > (0.112 nm) with a relatively large ion radius; the Ga < 3 + > (0.062 nm) part in the octahedron is replaced by positive ions Mg < 2 + > (0.072 nm) and Zr < 4 + > (0.075 nm) with large ion radiuses, the unit cell parameter of the octahedron is that the mismatching rate with a Bi: RIG doped series film is less than 0.05%, and the growth of the Bi: RIG series film can be better helped. According to the preparation method, the problems of spiral growth and crystal cracking are avoided by adjusting the growth atmosphere, inhibiting volatilization of Ga2O3 and matching with process adjustment of a Czochralski method. The thermal field for preparing the calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal comprises a zirconium oxide inner cylinder, a zirconium oxide sand thermal insulation layer and an aluminum oxide outer cylinder which are concentrically nested, and the temperature field is arranged in the lifting furnace.

Description

technical field [0001] The invention belongs to the field of crystals and optical devices, and more specifically relates to a calcium-magnesium-zirconium-doped gadolinium-gallium garnet crystal, a preparation method and a temperature field thereof. Background technique [0002] The magneto-optical device is one of the core and key devices in the laser communication system, and the Bi-doped rare earth iron garnet epitaxial thin film is the key raw material of the magneto-optic device, and its performance directly depends on the quality of its substrate single crystal At present, the commonly used magneto-optical single crystal thin film material is based on the growth substrate of gadolinium gallium garnet (GGG) crystal substrate, but the crystal lattice constant of gadolinium gallium garnet (GGG) is small, and the substrate is different from that of Bi:RIG system The lattice constant of the thin film does not match, because the mismatch ratio between the gadolinium gallium g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B15/00C30B15/14G02F1/09
CPCC30B29/22C30B15/00C30B15/14G02F1/09
Inventor 桂训鹏马晓
Owner YANGTZE OPTICAL FIBRE & CABLE CO LTD