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Ceramic aluminum-coated plate for IGBT (Insulated Gate Bipolar Translator) packaging and preparation method thereof

A technology of aluminum clad plate and ceramic bottom plate, which is applied in the field of ceramic metallization, can solve the problems of inability to adapt to various environments, single performance of ceramic bottom plate, and single performance of single aluminum, so as to improve furnace temperature uniformity, good toughness, and ensure stability sexual effect

Active Publication Date: 2022-04-15
深圳思睿辰新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a ceramic aluminum-clad plate for IGBT packaging and a preparation method thereof, one of the purposes of which is to enable the ceramic base plate to have a variety of performance capabilities, and to solve the problem that the single-component ceramic base plate has single performance and cannot adapt to various different environments. ; Another purpose is to solve the problem of single performance of single aluminum, in order to achieve the effect of improving the comprehensive performance of composite aluminum plate

Method used

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  • Ceramic aluminum-coated plate for IGBT (Insulated Gate Bipolar Translator) packaging and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh 200g of clay, 100g of quartz, 20g of feldspar, and 10g of silicon carbide, mix them evenly by wet ball milling, and then dry them. Then use molding to weigh 0.8mm squares, remove the glue, sinter at 1350°C for 3 hours, and cool with the furnace to obtain ceramic blanks. Then the ceramic blank was ground and cut into 50×50mm ceramic square pieces for use. 0.2mm thick pure aluminum, 0.02mm thick aluminum-magnesium alloy and 0.01mm aluminum-copper alloy are hot-pressed by vacuum hot-pressing process, the hot-pressing temperature is 620°C, and the pressure is 50MPa to obtain a composite aluminum plate for use. Au-25.5Ag-25.2Ge alloy active solder with a thickness of 20um was printed on a 50×50mm ceramic square by screen printing technology, and then put into an oven at 105°C for 24h to dry. Then heat up to 505°C under 4N argon atmosphere and weld for 10 minutes, then cool down to 300°C at 1°C / min and then cool in the furnace to obtain the aluminum-clad board. The test...

Embodiment 2

[0029] Weigh 200g of clay, 100g of quartz, 20g of feldspar, and 10g of silicon carbide, mix them evenly by wet ball milling, and then dry them. Then use molding to weigh 0.8mm squares, remove the glue, sinter at 1350°C for 3 hours, and cool with the furnace to obtain ceramic blanks. Then the ceramic blank was ground and cut into 50×50mm ceramic square pieces for use. 0.2mm thick pure aluminum, 0.02mm thick aluminum-magnesium alloy and 0.01mm aluminum-copper alloy are hot-pressed by vacuum hot-pressing process, the hot-pressing temperature is 620°C, and the pressure is 50MPa to obtain a composite aluminum plate for use. Au-25.5Ag-25.2Ge alloy active solder with a thickness of 5um was printed on a 50×50mm ceramic square using a screen printing process, and then put into an oven at 105°C for 24h to dry. Then raise the temperature to 505°C under 4N argon atmosphere and weld for 10 minutes, then cool down to 300°C at 1°C / min and then cool in the furnace to obtain the aluminum-clad ...

Embodiment 3

[0031] Weigh 200g of clay, 100g of quartz, 20g of feldspar, and 10g of silicon carbide, mix them evenly by wet ball milling, and then dry them. Then use molding to weigh 0.8mm squares, remove the glue, sinter at 1350°C for 3 hours, and cool with the furnace to obtain ceramic blanks. Then the ceramic blank was ground and cut into 50×50mm ceramic square pieces for use. 0.2mm thick pure aluminum, 0.02mm thick aluminum-magnesium alloy and 0.01mm aluminum-copper alloy are hot-pressed by vacuum hot-pressing process, the hot-pressing temperature is 620°C, and the pressure is 50MPa to obtain a composite aluminum plate for use. Au-25.5Ag-25.2Ge alloy active solder with a thickness of 20um was printed on a 50×50mm ceramic square by screen printing technology, and then put into an oven at 105°C for 24h to dry. Then heat up to 505°C under 6N argon atmosphere and weld for 10 minutes, then cool down to 300°C at 1°C / min and then cool down with the furnace to obtain the aluminum-clad board. T...

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Abstract

The invention discloses a ceramic aluminum-coated plate for IGBT packaging and a preparation method thereof, and relates to the technical field of ceramic metallization, the ceramic aluminum-coated plate comprises a ceramic bottom plate, an active metal liquid film and a composite aluminum plate, the outer surface of the ceramic bottom plate is uniformly covered with the active metal liquid film, and the ceramic bottom plate is connected with the composite aluminum plate through the active metal liquid film. According to the invention, a certain proportion of silicon carbide is added into the production raw materials of clay, quartz and feldspar of the ceramic bottom plate, so that the density, compressive strength, thermal conductivity and other properties of the composite ceramic containing silicon carbide are obviously improved, and the single component of a single ceramic bottom plate is avoided; and when the outer side of the ceramic bottom plate is covered with an aluminum plate, a composite aluminum plate composed of aluminum-magnesium alloy, industrial pure aluminum and aluminum-copper alloy is adopted, so that the corrosion resistance and the pressure resistance of the workpiece are enhanced, and meanwhile, the heat-conducting property of the workpiece is also enhanced.

Description

technical field [0001] The invention relates to a ceramic aluminum-clad board and a preparation method thereof, and relates to the technical field of ceramic metallization, in particular to a ceramic aluminum-clad board used for IGBT packaging and a preparation method thereof. Background technique [0002] The Chinese name of IGBT is an insulated gate bipolar transistor. It is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It has the high input impedance of MOSFET and GTR's low turn-on voltage drop has two advantages. With the rapid development of microelectronics technology, electronic devices tend to be high-power, high-density, and multi-functional, and the integration of electronic circuits is getting higher and higher, which inevitably generates a lot of heat when the circuit is working. Metal-ceramic composite materials combine the insulation, high thermal co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B33/04C04B33/13C04B33/16C04B41/88C04B37/02
CPCC04B33/04C04B33/13C04B33/16C04B41/88C04B41/515C04B37/023C04B2235/3463C04B2235/3826C04B41/5116C04B41/45
Inventor 杨晓战
Owner 深圳思睿辰新材料有限公司
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