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Polishing solution as well as preparation method and application thereof

A polishing liquid and conditioner technology, applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes, etc., can solve problems such as difficulty in long-term storage, low solubility of potassium permanganate, and low polishing rate. , to achieve the effect of easy transportation and storage, improved polishing rate, and simple preparation method

Pending Publication Date: 2022-04-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the solubility of potassium permanganate is low, and it is easy to precipitate crystals, which seriously affects the polishing efficiency of silicon carbide, unstable surface quality and short cycle life.
In the prior art, the polishing liquid containing potassium permanganate is mainly used, and the polishing liquid containing sodium permanganate generally has the technical problem of low polishing rate in the prior art

Method used

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  • Polishing solution as well as preparation method and application thereof
  • Polishing solution as well as preparation method and application thereof
  • Polishing solution as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1a. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, add 50g sodium permanganate, stir; Then add 50g silicon oxide (particle diameter D50 is 120nm) and 5g copper nitrate, then adjust the pH to 3.5 with nitric acid, and stir evenly to obtain the polishing solution.

[0047] 1b. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, add 50g sodium permanganate, stir; Then add 50g α-alumina (particle diameter D50 is 120nm) and 5g of copper nitrate, then adjust the pH to 3.5 with nitric acid, and stir evenly to obtain the polishing solution.

[0048] 1c. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, add 50g sodium permanganate, stir; Then add 50g cerium oxide (particle diameter D50 is 120nm) and 5g copper nitrate, then adj...

Embodiment 2

[0056] Take 6 parts of 100g water and put them in a constant temperature water bath. The temperature of the water bath is 0°C, 5°C, 10°C, 15°C, 20°C, 25°C. Then calculate the solid content of potassium permanganate. Do the same experiment for sodium permanganate. The experimental results are shown in Table 2.

[0057] Solubility wt% of potassium permanganate and sodium permanganate under table 2 different temperatures

[0058]

Embodiment 3

[0060] 3a. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, add 50g sodium permanganate respectively, 5g sodium hexametaphosphate, 1g organic bentonite, 1.5g magnesium nitrate, stir uniform; then add 50g of a-alumina (particle size D50 is 0.5um), adjust the pH to 3.5 with nitric acid, and stir evenly to obtain the polishing solution.

[0061] 3b. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, add 50g sodium permanganate respectively, 4g sodium tripolyphosphate, 1g fumed silica, 1.5g calcium nitrate , stir evenly; then add 50g of cerium oxide (particle size D50 is 0.5um), then adjust the pH to 3.5 with nitric acid, stir evenly to obtain the polishing solution.

[0062] 3c. the polishing solution containing sodium permanganate of the present embodiment, its preparation method is: get 1000g deionized water, a...

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Abstract

The invention provides a polishing solution as well as a preparation method and application thereof. The polishing solution comprises a grinding agent, sodium permanganate, an ionic strength regulator and water, and further comprises at least one of a dispersing agent, an anti-settling agent and a pH regulator. The preparation method of the polishing solution comprises the following step: mixing the components in the polishing solution to obtain the polishing solution. The polishing solution is applied to the field of silicon carbide polishing. According to the polishing solution, the grinding agent, the sodium permanganate and the ionic strength regulator are selected and reasonably combined, so that the polishing quality and the polishing rate of the polishing solution are greatly improved, and the polishing solution is particularly suitable for surface polishing of ultra-precision optical devices or semiconductor power devices with silicon-containing surfaces difficult to machine; and the polishing solution is an ideal polishing solution material with sub-nano-grade finish degree for manufacturing semiconductor compound wafers.

Description

technical field [0001] The invention relates to the technical field of wafer surface polishing and chemical mechanical polishing liquid, in particular to a polishing liquid and its preparation method and application. Background technique [0002] Silicon carbide (SiC) is one of the main representatives of the third-generation semiconductors, and it is an ideal semiconductor material for making high-temperature, high-frequency and high-power power electronic devices. Compared with the current traditional silicon-based products, the devices made by it can be The upgrade of power electronic products provides core guarantees, such as new energy vehicles, charging piles, photovoltaic power generation and other fields. With the rapid development of the semiconductor industry, the size of electronic devices is shrinking, and the flatness of the wafer surface is required to reach the nanometer level. Traditional planarization technology can only achieve local planarization, but che...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14
CPCC09G1/02C09K3/1463
Inventor 汪为磊刘卫丽宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI