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Complex-phase silicon carbide conductive ceramic with MAX phase-titanium aluminum carbide as auxiliary agent and preparation method of complex-phase silicon carbide conductive ceramic

A technology of complex-phase silicon carbide and conductive ceramics, applied in the field of silicon carbide ceramics, can solve the problems of high hardness, poor conductivity, and difficulty in precise control of resistivity.

Inactive Publication Date: 2022-06-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, silicon carbide ceramics with semiconductor characteristics have high room temperature resistance, and the resistivity changes nonlinearly, making it difficult to accurately control the resistivity, which limits the application of silicon carbide ceramics in the field of conduction.
In addition, silicon carbide ceramics have high hardness and poor electrical conductivity, which makes it difficult to process and shape silicon carbide ceramics, and diamonds need to be used for processing in the later stage

Method used

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  • Complex-phase silicon carbide conductive ceramic with MAX phase-titanium aluminum carbide as auxiliary agent and preparation method of complex-phase silicon carbide conductive ceramic
  • Complex-phase silicon carbide conductive ceramic with MAX phase-titanium aluminum carbide as auxiliary agent and preparation method of complex-phase silicon carbide conductive ceramic
  • Complex-phase silicon carbide conductive ceramic with MAX phase-titanium aluminum carbide as auxiliary agent and preparation method of complex-phase silicon carbide conductive ceramic

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Experimental program
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Effect test

Embodiment 1

[0032] Weigh 85g of SiC powder, Ti 3 AlC 2 Powder 15g in a ball mill jar, use 100g SiC balls as grinding balls, add 120g ethanol, and ball mill in a planetary ball mill for 12h. The obtained slurry was dried in an oven at 60° C., and then passed through a 100-mesh sieve to obtain a silicon carbide-based ceramic powder. The obtained powder was put into a graphite mold, sintered by SPS, the sintering atmosphere was an argon atmosphere, the heating rate was 100 °C / min, the sintering temperature was 1850 °C, the temperature was 1850 °C, the temperature was kept for 10 min, and the pressure was 40 MPa to obtain a complex-phase silicon carbide conductive ceramic. The density of the obtained ceramic material was 3.17 g cm -3 . The obtained material is made into a small disc with a diameter of 20mm and a thickness of 2mm, and silver paste electrodes are evenly coated on both sides, and then placed in an oven at 60°C for 1 hour, and tested by the Keithley2450 multi-channel test syst...

Embodiment 2

[0034] Weigh 80g of SiC powder, Ti 3 AlC 2 Powder 20g in a ball mill, use 100g SiC balls as grinding balls, add 120g ethanol, and mill in a planetary ball mill for 12h. The obtained slurry was dried in an oven at 60° C., and then passed through a 100-mesh sieve to obtain a silicon carbide-based ceramic powder. The obtained powder was put into a graphite mold, sintered by SPS, the sintering atmosphere was an argon atmosphere, the heating rate was 100 °C / min, the sintering temperature was 1850 °C, the temperature was 1850 °C, the temperature was kept for 10 min, and the pressure was 50 MPa to obtain a complex-phase silicon carbide conductive ceramic. The density of the obtained ceramic material was 3.44 g cm -3 . The obtained material is made into a small disc with a diameter of 20mm and a thickness of 2mm, and silver paste electrodes are evenly coated on both sides, and then placed in an oven at 60°C for 1 hour, and tested by the Keithley2450 multi-channel test system. At th...

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Abstract

The invention discloses a complex-phase silicon carbide conductive ceramic with MAX phase-titanium aluminum carbide as an auxiliary agent and a preparation method of the complex-phase silicon carbide conductive ceramic. The multiphase silicon carbide conductive ceramic comprises a SiC matrix and a TiC phase, wherein the TiC phase is generated by in-situ decomposition of Ti3AlC2 and is uniformly dispersed in the SiC matrix; wherein the TiC phase accounts for 9.2-12.3% of the multiphase silicon carbide conductive ceramic in percentage by mass. By introducing a proper conductive second phase, the sintering compactness and the conductivity of silicon carbide are improved. Ti3AlC2 belongs to a ternary layered compound MAX phase material, and has relatively high conductivity (3.1 * 10 < 6 > S.m <-1 >) and relatively high sintering activity. In the sintering process, Ti3AlC2 is decomposed and subjected to a solid solution reaction with a SiC matrix, sintering densification of the SiC ceramic can be promoted, and improvement of the electrical property of the SiC ceramic is facilitated.

Description

technical field [0001] The present invention relates to a kind of MAX phase-Ti 3 AlC 2 The multiphase silicon carbide conductive ceramic as an auxiliary agent and a preparation method thereof belong to the field of silicon carbide ceramics. Background technique [0002] Silicon carbide ceramics have a series of excellent properties such as high temperature resistance, corrosion resistance, wear resistance, neutron radiation resistance, oxidation resistance, high thermal conductivity and low thermal expansion coefficient, making them widely used in petroleum, chemical, mechanical, microelectronics, Aerospace and other fields have a wide range of applications. For example, silicon carbide ceramics can be used in nozzles and valves in the petroleum industry, heat exchangers and gasification pipes in the chemical industry, packaging materials and substrates in the microelectronics industry, etc. [0003] However, silicon carbide ceramics with semiconductor properties have hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/575C04B35/577C04B35/622C04B35/626
CPCC04B35/575C04B35/622C04B35/6261C04B35/62655C04B2235/3843C04B2235/3817C04B2235/5445C04B2235/5436C04B2235/666C04B2235/6562C04B2235/6567C04B2235/658C04B2235/96
Inventor 黄政仁陈文辉陈健郑嘉棋刘桂玲袁明
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI