High-temperature-resistant solar photovoltaic backboard

A technology for solar photovoltaic and photovoltaic backsheets, applied in the field of high temperature resistant solar photovoltaic backsheets and their preparation, can solve the problems of partial discharge, damage to insulation properties and mechanical properties, etc., and achieves improved crystalline properties, high compatibility, enhanced effect of interaction

Active Publication Date: 2022-07-01
江苏大明光福电力科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the performance of the photovoltaic backplane itself is insufficient. The working environment of the photovoltaic backplane, such as high humidity and high-intensity sunlight, makes it vulnerable to challenges such as partial discharge and electrical aging, resulting in damage to its insulation and mechanical properties. Performance is closely related to the safety of photovoltaic cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-temperature-resistant solar photovoltaic backboard
  • High-temperature-resistant solar photovoltaic backboard
  • High-temperature-resistant solar photovoltaic backboard

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A high temperature resistant solar photovoltaic back sheet, comprising: an intermediate layer and protective layers attached to both sides of the intermediate layer, the intermediate layer is made of montmorillonite / polyethylene terephthalate composite, and the protective layer is made of Manufactured from polyvinylidene fluoride.

[0031] The preparation method of the above-mentioned high temperature resistant solar photovoltaic backplane comprises the following steps:

[0032] S1, add 5kg of nano-montmorillonite and 1kg of polyamide-amine into 20kg of water, stir at a high speed for 10min at a speed of 1000r / min, add 1kg of caprolactam and continue to stir for 1min, send into the high temperature and high pressure reaction kettle, add 0.1kg under nitrogen protection Phosphate ester and 1kg acetic acid, react at 70°C for 1h, heat up to 180°C and continue to react for 1h. During the reaction process, keep the pressure in the reactor at 1.2MPa, vent to normal pressure, v...

Embodiment 2

[0037] A high temperature resistant solar photovoltaic back sheet, comprising: an intermediate layer and protective layers attached to both sides of the intermediate layer, the intermediate layer is made of montmorillonite / polyethylene terephthalate composite, and the protective layer is made of Manufactured from polyvinylidene fluoride.

[0038] The preparation method of the above-mentioned high temperature resistant solar photovoltaic backplane comprises the following steps:

[0039] S1, add 10kg of nano-montmorillonite and 2kg of polyamide-amine into 50kg of water, stir at high speed for 20min at a speed of 2000r / min, add 4kg of caprolactam and continue to stir for 5min, send into the high temperature and high pressure reaction kettle, add 0.5kg under nitrogen protection Phosphate ester and 2kg acetic acid, react at 80°C for 2h, heat up to 200°C and continue to react for 2h. During the reaction, keep the pressure in the reactor at 2MPa, vent to normal pressure, vacuumize at...

Embodiment 3

[0044] A high temperature resistant solar photovoltaic back sheet, comprising: an intermediate layer and protective layers attached to both sides of the intermediate layer, the intermediate layer is made of montmorillonite / polyethylene terephthalate composite, and the protective layer is made of Manufactured from polyvinylidene fluoride.

[0045] The preparation method of the above-mentioned high temperature resistant solar photovoltaic backplane comprises the following steps:

[0046] S1, add 6kg of nano-montmorillonite and 1.7kg of polyamide-amine into 30kg of water, stir at a high speed for 13min at a speed of 1800r / min, add 3kg of caprolactam and continue to stir for 2min, send into the high temperature and high pressure reaction kettle, add 0.4 kg phosphate ester and 1.3 kg acetic acid, react at 77°C for 1.3h, heat up to 195°C and continue the reaction for 1.3h. During the reaction, keep the pressure in the reactor at 1.8MPa, vent to normal pressure, vacuumize at 212°C fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The high-temperature-resistant solar photovoltaic backboard comprises a middle layer and protective layers attached to the two sides of the middle layer, the middle layer is made of a montmorillonite/polyethylene glycol terephthalate compound, and the protective layers are made of polyvinylidene fluoride; the montmorillonite/polyethylene glycol terephthalate compound is obtained by carrying out melt blending on polyethylene glycol terephthalate and dispersed montmorillonite and then carrying out injection molding. The invention discloses a preparation method of the high-temperature-resistant solar photovoltaic backboard. The preparation method comprises the following steps: drying the polyethylene glycol terephthalate, mixing the dried polyethylene glycol terephthalate with the dispersed montmorillonite, carrying out melt blending, extruding, drying, and carrying out injection molding to obtain the middle layer; performing oxygen plasma bombardment on two sides of the intermediate layer to obtain a pretreated intermediate layer; spraying a 3-aminopropyltriethoxysilane solution on the surface of the pretreated intermediate layer to obtain a pre-sprayed intermediate layer; polyvinylidene fluoride films are attached to the two sides of the pre-sprayed middle layer, pressurized heat treatment is carried out, cooling is carried out to the room temperature, and the high-temperature-resistant solar photovoltaic backboard is obtained.

Description

technical field [0001] The invention relates to the technical field of photovoltaic backplanes, in particular to a high temperature resistant solar photovoltaic backplane and a preparation method thereof. Background technique [0002] Solar panels are mainly composed of solar PV glass, EVA environmental protection film, solar cell components, photovoltaic backplanes and junction boxes. As the key photovoltaic packaging material of solar panels, photovoltaic backplanes have a large area of ​​contact with the external environment of photovoltaic modules. , In the face of harsh environments such as humid heat, dry heat and strong ultraviolet rays, it is not only crucial to maintain the performance of photovoltaic modules, but also to ensure the long-term operational reliability of photovoltaic modules. [0003] Conventional solar back sheets are composed of multiple layers of materials. Take the most common composite KPE back sheet on the market as an example. Its structure is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B32B27/36B32B27/30B32B27/08B32B27/18B32B33/00C08K3/34C08K9/04C08L67/02H01L31/048H01L31/049
CPCB32B27/36B32B27/304B32B27/08B32B27/18B32B33/00B29C48/08B29C71/04H01L31/049H01L31/0481C08K3/346C08K9/08C08K2201/011B32B2255/24B32B2255/10B32B2307/306B32B2457/12B32B2307/558B32B2307/54B32B2307/546C08L67/02Y02E10/50
Inventor 古小花何梦龙李学忠胡世杰
Owner 江苏大明光福电力科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap