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Ternary nitride coating prepared by microwave plasma chemical vapor deposition and method thereof

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of coating, metal material coating process, solid-state diffusion coating, etc., can solve the problems of high preparation temperature, large coating particles, difficulty in introducing various metal elements, etc. Achieve excellent high-temperature service characteristics, uniform grain size, and good homogenization

Active Publication Date: 2022-07-01
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the efficiency of physical vapor deposition is low, and generally only thinner coatings can be obtained. The manufacturing process of the required target is complicated and costly, and it is affected by the quality of the target (density, grain size, etc.) and the different deposition processes. The interaction between the target material and different sputtering conditions will lead to structural defects such as large particles and pores in the coating, which will affect the coating performance
Compared with physical vapor deposition, chemical vapor deposition has a faster rate and can obtain micron or even millimeter-scale coatings, but it is difficult to introduce a variety of metal elements, and is generally only used to prepare binary nitride coatings
Although there are a few reports in the literature, some ternary nitride coatings can be prepared using metal-organic compounds as raw materials by chemical vapor deposition technology, but the available metal-organic compound raw materials are very limited, expensive and have certain toxicity. In addition, chemical The relatively high preparation temperature of vapor deposition can also have an adverse effect on the protective substrate

Method used

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  • Ternary nitride coating prepared by microwave plasma chemical vapor deposition and method thereof
  • Ternary nitride coating prepared by microwave plasma chemical vapor deposition and method thereof
  • Ternary nitride coating prepared by microwave plasma chemical vapor deposition and method thereof

Examples

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Effect test

Embodiment 1

[0028] A ternary nitride coating prepared by microwave plasma chemical vapor deposition, the molecular form of the ternary nitride coating is M 1-x D x N y , wherein M is Cr, the D is Al, and solid solution and or intermetallic compound are distributed in the ternary nitride coating.

[0029] A method for preparing a ternary nitride coating by microwave plasma chemical vapor deposition, wherein the ternary nitride coating is the aforementioned ternary nitride coating, comprising the following steps;

[0030] (1) Matrix cleaning: The metal matrix was cleaned in amino acid type surfactant, soaked in acetone solution, and then ultrasonically oscillated in absolute ethanol for 2 times for 15 minutes each time to remove surface impurities and oil stains, and then at 45 ℃ drying under nitrogen atmosphere;

[0031] (2) Pretreatment: Place 20 μm thick aluminum powder on the metal substrate treated in step (1), and then put the whole into the microwave plasma chemical vapor depositi...

Embodiment 2

[0038] A ternary nitride coating prepared by microwave plasma chemical vapor deposition, the molecular form of the ternary nitride coating is M 1-x D x N y , wherein M is Ti, the D is Al, and solid solution and or intermetallic compounds are distributed in the ternary nitride coating.

[0039] A method for preparing a ternary nitride coating by microwave plasma chemical vapor deposition, wherein the ternary nitride coating is the aforementioned ternary nitride coating, comprising the following steps;

[0040] (1) Matrix cleaning: The metal matrix was cleaned in amino acid type surfactant, soaked in acetone solution, and then ultrasonically oscillated in absolute ethanol for 2 times for 15 minutes each time to remove surface impurities and oil stains, and then at 45 ℃ drying under nitrogen atmosphere;

[0041] (2) Pretreatment: place 5 μm thick metal aluminum powder on the metal substrate treated in step (1), and then put the whole into the microwave plasma chemical vapor de...

Embodiment 3

[0048] A ternary nitride coating prepared by microwave plasma chemical vapor deposition, the molecular form of the ternary nitride coating is M 1-x D x N y , wherein M is Ti, the D is Cu, and solid solution and or intermetallic compounds are distributed in the ternary nitride coating.

[0049] A method for preparing a ternary nitride coating by microwave plasma chemical vapor deposition, wherein the ternary nitride coating is the aforementioned ternary nitride coating, comprising the following steps;

[0050] (1) Matrix cleaning: The metal matrix was cleaned in amino acid type surfactant, soaked in acetone solution, and then ultrasonically oscillated in absolute ethanol for 2 times for 15 minutes each time to remove surface impurities and oil stains, and then at 45 ℃ drying under nitrogen atmosphere;

[0051] (2) Pretreatment: Place a copper sheet with a thickness of 2 mm on the titanium alloy substrate treated in step (1), and then put it into the microwave plasma chemical...

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Abstract

The invention provides a ternary nitride coating prepared through microwave plasma chemical vapor deposition and a method, and belongs to the technical field of coating preparation. The invention discloses a ternary nitride coating for microwave plasma chemical vapor deposition. The molecular form of the ternary nitride coating is M < 1-x > DxNy. The invention discloses a method for preparing a ternary nitride coating through microwave plasma chemical vapor deposition. The method comprises the following steps: (1) cleaning and pretreating a substrate; (2) performing microwave plasma chemical vapor deposition for the first time to form a solid solution and / or an intermetallic compound on the surface of the metal matrix; and (3) performing microwave plasma chemical vapor deposition for the second time, and beginning to deposit the ternary nitride coating. Trace solid solutions or intermetallic compounds are evenly distributed in the ternary nitride coating, the effects of dispersion strengthening and coating performance enhancing are achieved, and the coating shows the better high-temperature service characteristic; the method provided by the invention has higher deposition efficiency, and a thicker ternary nitride coating can be obtained.

Description

technical field [0001] The invention belongs to the technical field of coating preparation, in particular to a ternary nitride coating prepared by microwave plasma chemical vapor deposition and a method thereof. Background technique [0002] Cutting-edge equipment in the fields of aerospace, marine engineering, and national defense and military industries has harsh and extreme operating conditions (such as ultra-high temperature, large temperature difference, high-speed erosion, cyclic impact, thermochemical corrosion, etc.), its ability to protect key materials and its safe use Higher requirements have been put forward for durability and service reliability. This requires that the surface coating must have the characteristics of high hardness, high temperature resistance, oxidation resistance and ablation resistance. Among them, improving the oxidation resistance and ablation resistance of the surface coating becomes the important direction of development. Although metal (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C12/00
CPCC23C12/00
Inventor 王传彬夏禹徐志刚彭健章嵩涂溶沈强张联盟
Owner WUHAN UNIV OF TECH
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