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Preparation method of electron transport layer and light emitting diode

A technology of electron transport layer and light-emitting diode, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problem of single material selection, achieve good light transmission, high conductivity, and facilitate the effect of charge transport concentration

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing an electron transport layer and a light-emitting diode, aiming to solve the existing technical problems of only using zinc oxide as the electron transport layer material, such as single material selection.

Method used

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  • Preparation method of electron transport layer and light emitting diode
  • Preparation method of electron transport layer and light emitting diode
  • Preparation method of electron transport layer and light emitting diode

Examples

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preparation example Construction

[0039] like figure 1 As shown, an embodiment of the present invention provides a method for preparing an electron transport layer, which includes the following steps:

[0040] S1, providing a first electron transport material, a second electron transport material and a solvent, the first electron transport material is titanium dioxide nanocrystals, and the second electron transport material is zinc oxide nanocrystals;

[0041] S2, respectively dispersing the first electron transport material and the second electron transport material in a solvent to form a first dispersion liquid and a second dispersion liquid;

[0042] S3, heat-treating the first dispersion to obtain a first electron transport layer;

[0043] S4, coating the second dispersion liquid on the surface of the first electron transport layer to form a second electron transport layer to obtain an electron transport layer.

[0044] Titanium dioxide nanocrystals are a wide-bandgap inorganic semiconductor material with ...

Embodiment 1

[0092] This embodiment provides a method for preparing an electron transport layer of a quantum dot light-emitting diode, comprising the following steps:

[0093] (31) Mix 1.4ml TX-100 with 7.6ml absolute ethanol, add 24mmol acetic acid and 24mmol tetraisopropyl titanate, stir vigorously for 10min at room temperature to obtain TiO 2 Precursor solution, using absolute ethanol to convert TiO 2 The precursor solution was diluted 10 times, placed in the air, and continued to stir for 30 min to slowly grow to obtain a titanium dioxide nanocrystal solution with an average particle size of 9 nm and a concentration of 20 mg / mL;

[0094] (32) spin-coating the titania nanocrystal solution obtained in step (31) on a clean IZO glass substrate, and placing it in a tube furnace with a hydrogen pressure of 1.5 MPa and a temperature of 500° C. for 30 min to obtain a first surface with oxygen-rich vacancies on the surface. an electron transport layer with a thickness of 18 nm;

[0095] (33) ...

Embodiment 2

[0097]This embodiment provides a method for preparing an electron transport layer of a quantum dot light-emitting diode, comprising the following steps:

[0098] (41) Mix 1.4ml of nonylphenol polyoxyethylene ether with 7.6ml of absolute ethanol, add 24mmol of acetic acid and 24mmol of tetraisopropyl titanate, stir vigorously for 10min at room temperature to obtain TiO 2 Precursor solution, using absolute ethanol to convert TiO 2 The precursor solution was diluted 20 times, placed in the air, and continued to stir for 30 min to slowly grow to obtain a titanium dioxide nanocrystal solution with an average particle size of 11 nm and a concentration of 10 mg / mL;

[0099] (42) spin-coating the titanium dioxide nanocrystal solution obtained in step (41) on a clean IZO glass substrate, placing it in a tube furnace with a hydrogen pressure of 2 MPa and a temperature of 450° C. for 30 min to obtain the first surface oxygen-rich vacancy An electron transport layer with a thickness of 1...

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Abstract

The invention relates to the technical field of electron transport materials, and provides a preparation method of an electron transport layer and a light emitting diode. According to the invention, the titanium dioxide nanocrystal is used as the material of the first electron transport layer, and the obtained first electron transport layer and the second electron transport layer formed by the zinc oxide nanocrystal are laminated to obtain the electron transport layer, so that the electron transport layer has relatively high conductivity; in addition, the problem that a zinc oxide electron transport layer limits materials, preparation conditions and dissolving solvents of other layer structures of the device is solved, structural optimization and preparation method optimization of the device are facilitated, and the obtained light-emitting diode has better overall performance.

Description

technical field [0001] The invention belongs to the technical field of electron transport materials, and in particular relates to a preparation method of an electron transport layer of a light emitting diode, and a light emitting diode. Background technique [0002] Zinc oxide is a common material for electron transport layers. There are two main reasons for the popularity of zinc oxide in the field of electron transport materials. On the one hand, the preparation method of zinc oxide is simple, low cost, non-toxic and environmentally friendly; The transmission layer has high transmittance, high electron mobility and carrier concentration. However, only using ZnO nanoparticles as the electron transport material will limit the materials, preparation conditions and dissolution solvents of other layer structures of the obtained device. Therefore, it is particularly important to develop other electron transport materials with high performance. [0003] In recent years, inorga...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/54B82Y30/00
CPCB82Y30/00H10K71/12H10K71/40H10K50/166H10K2102/00H10K71/00
Inventor 袁密
Owner TCL CORPORATION
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