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Preparation method of diamond reinforced silicon carbide composite wafer

A diamond-enhanced, silicon carbide crystal technology, applied in the direction of gaseous chemical plating, metal material coating process, solid-state diffusion coating, etc., to achieve the effect of avoiding complications

Active Publication Date: 2022-07-08
广东奔朗新材料股份有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there are many problems in depositing diamond on the surface of SiC or GaN, and issues such as plasma etching, interface strength, interface heat conduction, and stress need to be considered

Method used

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  • Preparation method of diamond reinforced silicon carbide composite wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A 5nm SiNx thin layer was plated on the polar surface of SiC carbon after vacuum heat treatment at 800°C for 3h. Subsequently, the microwave hydrogen plasma with a power of 1500W was treated at 400°C for 3 minutes, and then methane with a hydrogen gas flow rate of 5% was introduced, and the power and chamber pressure were increased to the wafer temperature to 680°C, which promoted the formation of carbon films and diamond nucleation for 15 minutes. . Then, the proportion of methane was reduced to 3%, and while maintaining the growth of diamond at 680 °C, silane with a flow rate of hydrogen gas of 1% was introduced, and the flow rate of silane was slowly reduced within 30 minutes until it was turned off, for the preparation of SiC / diamond composite gradient transition Floor. Subsequently, after the diamond has grown for 10 min, nitrogen with a hydrogen flow ratio of 3% was introduced and kept for 3 min, and then turned off. The nitrogen-assisted diamond growth process w...

Embodiment 2

[0042] A 20 nm SiNx thin layer was formed by plating the polar surface of SiC carbon after vacuum heat treatment at 1000 °C for 3 h. Subsequently, the microwave hydrogen plasma with a power of 2000W was treated at 500 °C for 1 min, and then methane with a hydrogen gas flow rate of 10% was introduced, and the power and chamber pressure were increased to the wafer temperature to 720 °C, which promoted the formation of carbon film and diamond nucleation for 5min. . Then, the proportion of methane was reduced to 3%, and silane with a hydrogen gas flow rate of 0.5% was introduced while maintaining the growth of diamond at 720 °C, and the flow rate of silane was slowly reduced within 20min until it was turned off, for the preparation of SiC / diamond composite gradient transition Floor. Subsequently, after the diamond has grown for 15 minutes, nitrogen with a hydrogen flow ratio of 5% is introduced and kept for 5 minutes, and then turned off. The nitrogen-assisted diamond growth proc...

Embodiment 3

[0044] A 15nm SiNx thin layer was formed by plating the polar surface of SiC carbon after vacuum heat treatment at 1000°C for 3h. Subsequently, the microwave hydrogen plasma with a power of 1800W was treated at 450°C for 3 minutes, and then methane with a hydrogen gas flow rate of 7% was introduced, and the power and chamber pressure were increased to the wafer temperature of 700°C, which promoted the formation of carbon films and diamond nucleation for 10 minutes. . Then, the proportion of methane was reduced to 3%, and silane with a hydrogen gas flow rate of 0.1% was introduced while maintaining the growth of diamond at 700 °C, and the flow rate of silane was slowly reduced within 10 min until it was turned off, for the preparation of SiC / diamond composite gradient transition Floor. Subsequently, after the diamond has grown for 15 minutes, nitrogen with a hydrogen flow ratio of 3% is introduced and kept for 5 minutes, and then closed, and the nitrogen-assisted diamond growt...

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Abstract

The invention discloses a preparation method of a diamond reinforced silicon carbide (SiC) composite wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: plating a 5-20nm SiNx thin layer on a SiC carbon polar surface subjected to vacuum heat treatment at 800-1000 DEG C; and after microwave hydrogen plasma treatment is carried out for 1-5 min, methane with the hydrogen flow proportion being 5-10% is introduced, the operation lasts for 5-15 min, and diamond high-density nucleation and C-Si bond formation are achieved based on nitrogen atom escape and carbon atom permeation. And then, silane with the hydrogen flow proportion being 0.1-1% is introduced while methane is reduced to 3%-5% for growing diamond, the silane flow is slowly reduced within 10-30 min till closing, and the SiC / diamond composite gradient transition layer is deposited. And then repeating the circulation process of introducing nitrogen with the hydrogen flow proportion of 1-5% every 5-20 min in diamond growth and keeping for 1-5 min, closing the nitrogen and methane after the diamond reaches a certain thickness, slowly cooling to 600 DEG C or below in hydrogen plasma, then raising the temperature to 800-1000 DEG C, treating for 0.5-5 h, and slowly cooling, and finally, the diamond / SiC composite wafer material with low stress and strong combination is realized by polishing the diamond surface.

Description

technical field [0001] A method for preparing a diamond-reinforced silicon carbide (SiC) composite wafer belongs to the field of semiconductor material preparation. Background technique [0002] With the advent of the fifth-generation mobile communication technology (5G) era, integrated circuits are also deepening in the direction of large-scale, high-integration, and high-power. As the core of the information technology industry, integrated circuits are a strategic, basic and leading industry that supports economic and social development and safeguards national security. The continuous upgrading of semiconductor materials plays a crucial supporting role in the safe and reliable development of the integrated circuit manufacturing industry and continuous technological innovation. The third-generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) will play an increasingly important role in the development of future technologies such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C8/20C23C16/02C23C16/34C23C16/511C23C16/56
CPCC23C16/513C23C16/511C23C8/20C23C16/0272C23C16/0209C23C16/345C23C16/029C23C16/56
Inventor 郑宇亭魏俊俊李成明尹育航周浩钧陶洪亮
Owner 广东奔朗新材料股份有限公司
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