Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composition for light absorption film formation containing blocked isocyanate compound and antireflection film formed therefrom

An anti-reflection coating, radiation absorbing technology, applied in the field of radiation absorbing coatings such as anti-reflection coatings, compositions for forming radiation absorbing coatings, can solve deposition, adverse effects of anti-reflection coating performance, resist image deformation, etc.

Inactive Publication Date: 2000-11-15
AZ ELECTRONIC MATERIALS (JAPAN) KK
View PDF13 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when various crosslinking agents are used, the antireflective coating material containing the crosslinking agent may adversely affect the resist layer, causing footing or scumming, resist image deformation, etc., thereby failing to form Resist image with desired resolution and shape
In particular, when using chemically amplified resists suitable for irradiating radiation sources such as KrF excimer lasers, the resists are susceptible to adverse effects on antireflective coating properties, especially acidity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1 Synthesis of blocked isocyanate group-containing polymer 1

[0036] At room temperature, 38.3 g (0.44 mol) of 2-butanone oxime was mixed with 550 g of tetrahydrofuran to prepare a homogeneous solution. Under stirring, 62g (0.4mol) of 2-isocyanatoethyl methacrylate was added dropwise to the solution, and after the mixture was stirred at room temperature for 3 hours, 40g (0.4mol) of methyl methacrylate was added in 100g Solution in tetrahydrofuran and 4.6 g of azobisisobutyronitrile (AIBN initiator). After the solution was stirred for 20 minutes under a nitrogen atmosphere, polymerization was carried out at 65° C. for 7 hours. After the reaction was completed, the reaction solution was cooled to room temperature, and precipitated in hexane. The resulting white powdery product was filtered off, washed with hexane, and dried in vacuo to obtain 110 g of a polymer containing isocyanate groups capped with 2-butanone oxime. GPC analysis using tetrahydrofuran as mob...

Embodiment 2

[0037] Example 2 Synthesis of blocked isocyanate-containing polymer 2

[0038] At room temperature, 38.3 g (0.44 mol) of 2-butanone oxime was mixed with 550 g of tetrahydrofuran to prepare a homogeneous solution. Under stirring, 62 g (0.4 mol) of 2-isocyanatoethyl methacrylate was added dropwise to the solution, and after the mixture was stirred at room temperature for 3 hours, 70.4 g (0.4 mol) of benzyl methacrylate was added thereto Solution in 150 g tetrahydrofuran and 4.6 g AIBN. After the solution was stirred for 20 minutes under a nitrogen atmosphere, polymerization was carried out at 65°C for 8 hours. After the reaction was completed, the reaction solution was cooled to room temperature, and precipitated in hexane. The resulting white powdery product was filtered off, washed with hexane, and dried in vacuo to obtain 120 g of an isocyanate group-containing polymer capped with 2-butanone oxime. GPC analysis using tetrahydrofuran as mobile phase and polystyrene as stand...

Embodiment 3

[0039] Example 3 Synthesis of blocked isocyanate-containing polymers 3

[0040] At room temperature, the 2-butanone oxime of 55.5g is dissolved in the propylene glycol methyl ether acetate (PGMEA) of 145g, in the solution obtained, add the polycondensation resin of phenyl diisocyanate and formaldehyde sold by Aldrich company of 50g , followed by stirring for more than 10 hours to obtain a solution of a polymer in which the isocyanate groups are blocked. The amount of PGMEA added to the reaction solution should make the concentration of the polycondensation resin 10wt%. This solution will be used below as a solution for preparing a composition for forming an antireflection coating.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
dispersityaaaaaaaaaa
dispersityaaaaaaaaaa
Login to View More

Abstract

A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.

Description

technical field [0001] The present invention relates to a novel composition for forming radiation absorbing coatings and radiation absorbing coatings, such as antireflective coatings, formed therefrom. More particularly, the present invention relates to compositions for forming radiation absorbing coatings, such compositions being particularly suitable for forming antireflective coatings which are effective in preventing reflection of radiating substrates for use in photolithography to produce ultrafine components such as integrated circuit components; the invention also relates to radiation absorbing coatings such as antireflective coatings formed from said compositions. Background of the invention [0002] In the field of integrated circuit production, in order to achieve a higher degree of integration, people have been trying to miniaturize the processing size in the lithography process. In recent years, a technology for fine processing at the submicron level has been dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G18/80C09D175/04G03F7/09
CPCY10S430/107Y10S430/115Y10S430/106C09D175/04Y10S430/108G02B1/111Y10S430/151G03F7/091C08G18/80
Inventor 康文兵木村健松尾祥子西协良典田中初幸
Owner AZ ELECTRONIC MATERIALS (JAPAN) KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com