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Optoelectronic device and selection district epitaxial method of autocollimation model spot inverter integration

A mode spot converter, optoelectronic device technology, applied in laser parts, lasers, electrical components, etc., can solve the problems of loss, difficult to guarantee growth quality, etc.

Inactive Publication Date: 2003-07-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the disadvantage of this method is that when selecting the growth waveguide area, the active area must be protected by a dielectric mask, so that the growth quality of the butt joint between the waveguide and the active area is difficult to guarantee, thus bringing additional loss

Method used

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  • Optoelectronic device and selection district epitaxial method of autocollimation model spot inverter integration
  • Optoelectronic device and selection district epitaxial method of autocollimation model spot inverter integration
  • Optoelectronic device and selection district epitaxial method of autocollimation model spot inverter integration

Examples

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Embodiment 1

[0029] Example 1: Monolithic integration of a self-aligned mode spot converter and a 1.55 μm distributed feedback laser

[0030] The specific process steps are:

[0031] 1) On an n-type InP (indium phosphide) substrate, planarly grow an upper n-type InP buffer layer, an InGaAsP (indium gallium arsenide phosphide) lower confinement layer 5 and a compressively strained InGaAsP (indium gallium arsenide phosphide) / InGaAsP multiple quantum well layer 6( image 3 );

[0032] 2) Photoetch the distributed feedback laser part 2 of the device along the front mesa direction, and at the same time use selective etching technology in the spot converter area to etch the InP buffer layer with a depth of about 180nm to form a distributed feedback laser mesa ( figure 1 );

[0033] 3) 150nm SiO on planar growth 2 Dielectric mask, select epitaxial SiO by photolithography according to the optimally designed structure 2 Dielectric Mask Pattern ( figure 1 );

[0034] 4) Simultaneous planar gr...

Embodiment 2

[0045] Example 2. Monolithic integration of self-aligned waveguide mode-speckle converters and electroabsorption modulators

[0046] The modulator monolithically integrates an upper-mode speckle converter, which can reduce the insertion loss of the entire device and improve the offset tolerance of the device and fiber coupling. The specific manufacturing steps are as follows:

[0047] 1) planarly grow an upper n-type InP buffer layer, an InGaAsP lower confinement layer 5 and an InGaAsP / InGaAsP quantum well layer 6 on an n-type InP substrate, ( Figure 4 );

[0048] 2) The modulator part 2 is photoetched out along the front mesa direction, and the quantum well layer and the lower confinement layer of the speckle-removing converter region 1 are etched at the same time, about 280nm, and etched to the InP buffer layer to form the modulator mesa, such as figure 1 shown;

[0049] 3) 150nm SiO on planar growth 2 Dielectric mask, select the epitaxial pattern according to the optima...

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Abstract

A selective epitaxial method for integrated photoelectric device and self-aligned template converter includes such steps as growing buffering layer, lower limitting layer and active layer on the surface of substrate, selectively growing upper limitting layer and vertical wedge waveguide by SiO2 mask, preparing ridge waveguide or burried waveguide as required, and epitaxial growth of indium phosphide layer and ohm contact layer, and preparing p / n electrodes.

Description

technical field [0001] The invention relates to a semiconductor material and an integrated optoelectronic device, in particular to a selective area epitaxy method for integrating an optoelectronic device and a self-aligned mode spot converter. Background technique [0002] Optical communication networks are expected to play an increasingly important role in the transmission and processing of large amounts of data. Due to the wide bandwidth of glass optical fiber, especially multiple wavelength channels can share the same optical fiber at the same time (dense wavelength division multiplexing technology), which can obtain huge transmission capacity. Since optical cross-connection allows greater bandwidth and integration than electronic interconnection, not only in long-distance optical fiber transmission systems, but also in advanced computer networks and electronic systems, optical connections are necessary. [0003] Most of the functional blocks of an optical fiber communic...

Claims

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Application Information

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IPC IPC(8): G02B6/42H01L21/00H01S3/00H01S5/00H01S5/026
Inventor 邱伟彬王圩董杰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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