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Ultraviolet sensor with nanometer TiO-M thin film and production thereof

An ultraviolet light and sensor technology, applied in the field of optoelectronics, can solve the problems of high cost, low detector sensitivity, and immature preparation technology, and achieve the effects of low price, high sensitivity, and simple and mature preparation technology.

Inactive Publication Date: 2006-08-16
DALIAN MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ultraviolet light sensors made of these materials also have many shortcomings, such as SiC has an indirect band gap, which makes the detector sensitivity not high; diamond thin film and GaN need to use expensive preparation equipment and substrate materials, so the cost is high , and the preparation process is not mature enough

Method used

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  • Ultraviolet sensor with nanometer TiO-M thin film and production thereof
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  • Ultraviolet sensor with nanometer TiO-M thin film and production thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Proportion: tetrabutyl titanate: absolute ethanol: deionized water: diethanolamine = 20:100:1:6 volume ratio

[0034] Tetrabutyl titanate is used as the precursor. Tetrabutyl titanate and diethanolamine were dissolved in absolute ethanol (60% of the total amount), and stirred for 60 minutes to obtain a mixed solution. In addition, after mixing deionized water and absolute ethanol (accounting for 40% of the total amount) evenly, dropwise dropwise into the above-mentioned mixed solution under continuous stirring, and continue stirring for 60 minutes after the dropwise addition, to obtain a uniform, transparent light yellow TiO 2Sol.

[0035] Nano-TiO 2 Preparation of thin-film photosensitive electrode 5: take clean conductive glass as a substrate, and use a self-made film pulling machine (speed precision 10 μm / s) to form a film by dipping-pulling method. After each film drawing, put the substrate into an oven at a temperature of 80-120°C to dry for 10-20 minutes, whic...

Embodiment 2

[0042] Proportion: tetrabutyl titanate: absolute ethanol: deionized water: diethanolamine: zinc nitrate = 20: 100: 1: 6: m (m = 0.0448g)

[0043] 0.0448gZn(NO 3 ) 2 Dissolve in 30ml of absolute ethanol, then add 10ml of tetrabutyl titanate and 3ml of diethanolamine, and stir for 60min to obtain a mixed solution. In addition, mix 0.5ml of deionized water and 10ml of absolute ethanol evenly, dropwise into the above mixture under continuous stirring, and continue to stir for 60min after the addition, to obtain a uniform and transparent TiO 2 : Zn sol.

[0044] The preparation of the thin-film electrode and the ultraviolet photochemical cell and the assembly of the ultraviolet light sensor device are the same as in Example 1.

[0045] Figure 8 TiO prepared under the same conditions 2 The X-ray diffraction analysis results of the powder crystal sample obtained by roasting the sol at 450°C. The grain size is about 15nm, which is anatase phase. In this example, changing Zn 2...

Embodiment 3

[0049] Proportion: tetrabutyl titanate: absolute ethanol: deionized water: diethanolamine: polyethylene glycol 2000=20:100:1:6:m (m=1.0g)

[0050] Tetrabutyl titanate and diethanolamine were dissolved in absolute ethanol (60% of the total amount), and stirred for 60 minutes to obtain a mixed solution. In addition, after mixing deionized water and absolute ethanol (accounting for 40% of the total amount) evenly, it was dripped into the above-mentioned mixed solution drop by drop under continuous stirring, and 1.0 g of polyethylene glycol 2000 was added to the solution after the dropwise addition. Continue stirring for 60min to obtain uniform, transparent light yellow TiO 2 Sol.

[0051] The preparation of the thin-film electrode and the ultraviolet photochemical cell and the assembly of the ultraviolet light sensor device are the same as in Example 1.

[0052] Figure 11 Transient photocurrent spectra of samples obtained in this example at different potentials. In this expe...

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Abstract

The invention consists of an ultraviolet photo-detector using TiO2 film as a layer of absorbing ultraviolet, a relevant offset voltage circuit, a current switching circuit and a signal processing circuit. The ultraviolet photo-detector is a wideband nano TiO2 film sensor that only has high sensitive response for ultraviolet light shorter than 380nm, and doesn't sense infrared light and visible light. Thereby it can prevent interference of other light sources except ultraviolet.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics. Nano TiO 2 Preparation method of thin film ultraviolet sensor. Background technique [0002] Nano-TiO 2 As a wide bandgap (bandwidth 3.2eV) inorganic semiconductor functional material, thin film is favored by people because of its excellent properties such as high porosity, high surface area, high photoconductivity, high photoelectrochemical and catalytic activity, and is widely used in dyes. Sensitized solar cells, photocatalytic decomposition of pollutants, self-cleaning films and other fields. But nano TiO 2 The inherent characteristic of thin film for strong absorption of ultraviolet light below 380nm has only been studied in photocatalysis, but there are almost no reports on ultraviolet photoelectric conversion. In recent years, in order to convert TiO 2 Applied to ultraviolet light sensors, we have carefully studied TiO 2 The ultraviolet photoelectric conversion characteristi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/18G01J1/02
CPCY02P70/50
Inventor 曹望和付姚
Owner DALIAN MARITIME UNIVERSITY
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