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Diode of heterogenous pn junction of n-silicone Nano wire/ p- conductive organic matter, and preparation method

A technology of conductive organics and silicon nanowires, applied in the field of nanomaterials and microelectronic devices, can solve the problems of large aspect ratio, large specific surface area, and no size confinement effect without nanostructures, and achieves Easy processing and regulation, low threshold voltage, low cost effect

Inactive Publication Date: 2007-02-21
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, these silicon / polymer heterogeneous p-n junctions prepared on the basis of silicon bulk materials do not show obvious size confinement because they do not have the characteristics of large aspect ratio and large specific surface area of ​​nanostructures. effect

Method used

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  • Diode of heterogenous pn junction of n-silicone Nano wire/ p- conductive organic matter, and preparation method
  • Diode of heterogenous pn junction of n-silicone Nano wire/ p- conductive organic matter, and preparation method
  • Diode of heterogenous pn junction of n-silicone Nano wire/ p- conductive organic matter, and preparation method

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Experimental program
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Effect test

Embodiment 1

[0023] 1. Wafer cleaning

[0024] Firstly, the method of No. 1 liquid and No. 2 liquid commonly used in the semiconductor process is used to clean the silicon wafer. The formula of No. 1 liquid is: concentrated ammonia water: 30% hydrogen peroxide: deionized water = 1: 2: 7; the formula of No. 2 liquid is: concentrated hydrochloric acid: 30% hydrogen peroxide: deionized water = 1: 2: 7. First boil the silicon chip with No. 1 liquid, make it boil for a while, wait for it to cool down, and then clean it with deionized water. Then put the No. 2 liquid to cook the silicon chip, make it boil for a while, wait for it to cool down, and finally clean it with deionized water. Soak the silicon wafer with 10% hydrofluoric acid for 10 minutes to remove the oxide layer before use.

[0025] 2. Growth of Nanowires

[0026] First, prepare 10% HF aqueous solution and 0.02mol / L AgNO 3 Each solution is 100mL, use a dropper to absorb the required AgNO 3 Drop the solution into the reaction k...

Embodiment 2

[0038] 1. silicon wafer cleaning: same as embodiment one

[0039] 2. Growth of nanowires

[0040] First, prepare 10% HF aqueous solution and 0.05mol / L AgNO 3 Each solution is 100mL, use a dropper to absorb the required AgNO 3 Drop the solution into the reaction kettle, and then use another dropper to draw the required HF solution in the fume hood, and prepare a mixed solution at a volume ratio of 1:1. Put the silicon wafer to be reacted face up into the reactor. If the reaction time is long and it needs to be heated in an oven, it is necessary to cover the inner tank of the reaction kettle in turn, then put the inner tank into the metal shell, and tighten the metal cap. Only after it is completely covered can it be put into the oven. The process conditions of the EMD process are: temperature: 50°C; time: 2 hours. Finally, the silver was removed with dilute nitric acid, rinsed with deionized water, and dried.

[0041] 3. Organic polymer insulating layer filling

[0042] F...

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Abstract

The heterogeneous pn junction of diode is composed of Nano silicon line developed on n type silicon chip and p type conductive organic substance filled between Nano silicon lines. The method for preparing the heterogeneous pn junction of diode includes steps: first, developing Nano silicon line on n type silicon chip by using metal deposit method with no electricity; then, filling in insulating layer of organic polymer and p type conductive organic substance into gaps between Nano silicon lines in sequence to form heterogeneous pn junction through whirl coating method; or filling in p type conductive organic substance into gaps between Nano silicon lines directly to form heterogeneous pn junction through whirl coating method; finally, preparing metal electrode through sputtering or heat evaporation procedure. The disclosed diode possesses lower cut in voltage in forward direction, and higher positive going current density.

Description

technical field [0001] The invention relates to a novel nanowire array heterogeneous pn junction diode—an n-silicon nanowire / p-conductive organic matter heterogeneous pn junction diode and a preparation method thereof, belonging to the field of nanometer materials and microelectronic devices. Background technique [0002] At present, silicon / polymer heterogeneous p-n junctions are all prepared on the basis of silicon bulk materials, such as "Silicon-polymer Applications of heterojunctions in sensors" (Laranjeira JMG, Khoury HJ, de Azevedo WM, et al. Asilicon-polymer heterostructure for sensor applications, BRAZILIAN JOURNALOF PHYSICS 32(2): 421-423 JUN 2002); and "Applied Physics Express, June 2004, Volume 84, Issue 24, pp. 5019-5021, "Research on the Preparation of Memory Cells with Low Switching Voltage Using Organic-Inorganic Heterojunction Compounded by Conductive Polymer and Doped Silicon" (Smith S, Forrest SR, A low switching voltage organic-on-inorganic heterojunctio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
Inventor 方国家程彦钊李春
Owner WUHAN UNIV