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Polishing slurry

A technology of slurry and ground, which is applied in the direction of grinding devices, grinding machine tools, polishing compositions containing abrasives, etc., can solve the problems of decreased grinding speed and non-resolved problems, and achieve the effect of high flatness

Inactive Publication Date: 2007-04-04
MITSUI CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no solution to the phenomenon called dishing, in which the metal film of the wiring part is further polished to form a concave shape at the center.
In order to prevent this phenomenon, Japanese Patent Application Laid-Open No. 8-83780 and the like disclose the technology of using a protective film forming agent such as benzotriazole, but since the effect of a protective film forming agent such as benzotriazole is very high, there is a significant decrease in the polishing rate. Shortcomings

Method used

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Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0105] 2000 parts of water and 0.4 parts of ammonium alkyl diphenyl ether disulfonate were placed in a separable flask (Separaflask) equipped with a stirrer, a thermometer, and a reflux condenser, and the temperature was raised to 70°C while nitrogen substitution was carried out under stirring. . While maintaining the internal temperature at 70°C, 5.2 parts of a 10% ammonium azobiscyanovalerate neutralized aqueous solution was added as a polymerization initiator. In addition, 216 parts of ethyl acrylate, 72 parts of methacrylic acid, and 1.8 parts of n-dodecyl mercaptan were mixed and dropped into the flask over 4 hours. After 30 minutes, 72 parts of styrene was added over 15 minutes, and it maintained at 70 degreeC for 4 hours. The obtained emulsion had a solid content of 13.5%, an average particle diameter measured by light scattering of 170.4 nm, and a pH of 5.0. The SEM image of the obtained organic particles is shown in FIG. 1 .

manufacture example 2

[0107] 547.3 parts of water and 0.3 parts of ammonium alkyl diphenyl ether disulfonate were placed in a separable flask equipped with a stirrer, a thermometer, and a reflux condenser, and the temperature was raised to 70° C. while performing nitrogen replacement with stirring. While keeping the inner temperature at 70°C, 1.2 parts of ammonium persulfate was added as a polymerization initiator. In addition, 222.2 parts of methyl methacrylate, 59 parts of methacrylic acid, 15 parts of divinylbenzene, 120 parts of water and 0.25 parts of ammonium diphenyl ether disulfonate were mixed to prepare a monomer emulsion , This emulsion was dropped into the flask over 4 hours, and then kept at 70° C. for 30 minutes. Next, 60 parts of styrene, 23.7 parts of water, and 0.05 part of ammonium alkyl diphenyl ether disulfonate were mixed to prepare an emulsion, and this emulsion was dropped over 15 minutes, and kept at 70° C. for 4 hours.

[0108] The obtained emulsion had a solid content of ...

manufacture example 3

[0110] 434.5 parts of water and 0.1 part of ammonium alkyl diphenyl ether disulfonate were placed in a separable flask equipped with a stirrer, a thermometer, and a reflux condenser, and the temperature was raised to 70° C. while nitrogen substitution was carried out while stirring. While keeping the internal temperature at 70°C, 0.4 parts of ammonium persulfate was added as a polymerization initiator, and its dissolution was confirmed. In addition, 30 parts of methyl acrylate, 27.2 parts of butyl acrylate, 37.3 parts of acetoacetoxyethyl methacrylate, 5.5 parts of 2-hydroxyethyl methacrylate, 40 parts of water and alkyl 0.1 part of ammonium diphenyl ether disulfonate was mixed to prepare a monomer emulsion, and this emulsion was dropped into a flask over 4 hours. After 30 minutes, 10 parts of 2-ethylhexyl acrylate, 10 parts of butyl methacrylate, 8 parts of water, and 0.02 parts of alkyl diphenyl ether ammonium disulfonate were mixed and adjusted, and the obtained emulsion wa...

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Abstract

To provide a polishing slurry which is remarkably inhibited in the occurrence of scratch, dishing or erosion. A polishing slurry containing organic particles (A), an oxidizing agent, and a complexing agent, wherein the organic particles (A) are those obtained by coating part of the surface of an organic particle (B) having on the surface functional groups reactive with the metal to be polished with a resin (C) free from functional groups reactive with the metal to be polished and the organic particle (B) is preferably one containing a copolymer obtained by polymerization of a monomer composition comprising 1 to 50 wt% of one or more monomers selected from among carboxyl monomers, hydroxyl monomers, amino monomers, acetoacetoxy monomers, and glycidyl monomers and 99 to 50 wt% of other monomers, with each percentage based on the whole of the monomers.

Description

technical field [0001] The present invention relates to a polishing slurry capable of polishing and flattening the surface of copper or the like in the formation of wiring made of copper or the like used in the manufacture of semiconductor devices. Background technique [0002] In recent years, in the wiring process of semiconductor device manufacturing, as a trench for forming wiring is formed on the insulating film, the metal film for wiring is buried by plating, etc., and the excess metal film is removed, and the insulating layer containing the metal wiring is insulated. As a technique for film planarization, CMP (Chemical and Mechanical Polishing) is used. This is a method of performing mechanical polishing using a slurry in which abrasive grains are dispersed. [0003] In the CMP technique, a slurry containing metal oxides such as ceria and alumina or inorganic abrasive grains such as silica has been used conventionally. However, the hardness of these inorganic abrasi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14C09G1/02C09G1/04H01L21/321
CPCC09G1/04C09K3/1463C09G1/02H01L21/3212C09K3/14
Inventor 进藤清孝江藤彰纪石塚友和
Owner MITSUI CHEM INC