Prepn process of low temperature double ion beam sputtered multilayer Ge/Si film with self-organized Ge quantum dots

The technology of ion beam sputtering and double ion beam is applied in the field of preparation of refrigerated near-infrared photon detector thin film materials, which can solve the problems of high production cost, unfavorable large-scale industrial production, complicated process and the like, and achieves low production cost, The effect of satisfying quantum size effect and improving film quality

Inactive Publication Date: 2007-06-06
YUNNAN UNIV
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  • Summary
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AI Technical Summary

Problems solved by technology

[0003] Existing quantum dot thin film materials are often prepared by methods such as molecular beam epitaxy, ultra-high vacuum chemical vapor deposition, or metal organic chemical vapor deposition. Conducive to large-scale industrial production, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The equipment used is the FJL560III ultra-high vacuum magnetron and ion beam combined sputtering equipment of the prior art. Two ion beam sputtering guns are placed in the growth chamber, one ion gun is used for sputtering Ge targets, and the other ion gun is used for For sputtering Si targets. The used targets are high-purity Si square targets and high-purity Ge square targets with a purity of 5N (the content is above 99.999%). The Si substrate material used is a P-type single crystal Si wafer with a crystal orientation of (100), polished on one side, and the resistivity is 5Ω / cm. The sputtering gas uses high-purity argon with a purity of 5N. For ultrasonic cleaning, a commercially available ultrasonic cleaner was used. specifically is:

[0023] Carry out following treatment to Si(100) substrate with prior art:

[0024] A. Choose a Si single-sided polished substrate with a crystal orientation of (100), first use toluene to ultrasonically clean it for 20 minutes to ...

Embodiment 2

[0032] The equipment and materials used are all the same as in Example 1. specifically is:

[0033] Carry out following treatment to Si(100) substrate with prior art:

[0034] A. Choose a Si single-sided polished substrate with a crystal orientation of (100), first use toluene to ultrasonically clean it for 20 minutes to remove surface organic matter, then use acetone to ultrasonically clean it for 10 minutes, and then use absolute ethanol to circulate ultrasonically for 10 minutes. Acetone, Alternative ultrasonic cleaning with absolute ethanol is a cycle, and a total of 5 cycles are washed to remove toluene, acetone and inorganic impurity ions;

[0035] B, the cleaned Si substrate is put into the diluted hydrofluoric acid solution, that is, by the volume ratio of 40% HF solution: pure water=1:40, the solution obtained after diluting the hydrofluoric acid is soaked for 20s , bleach the oxide layer on the surface of the Si substrate, and then dry it with nitrogen with a purit...

Embodiment 3

[0042] The equipment and materials used are all the same as in Example 1. specifically is:

[0043] Carry out following treatment to Si(100) substrate with prior art:

[0044] A. Choose a Si single-sided polished substrate with a crystal orientation of (100), first use toluene to ultrasonically clean it for 20 minutes to remove surface organic matter, then use acetone to ultrasonically clean it for 10 minutes, and then use absolute ethanol to circulate ultrasonically for 10 minutes. Acetone, Alternative ultrasonic cleaning with absolute ethanol is a cycle, and a total of 4 cycles are washed to remove toluene, acetone and inorganic impurity ions;

[0045] B, the cleaned Si substrate is put into the dilute solution of hydrofluoric acid, that is, by the volume ratio of 40% HF solution: pure water=1:40 by concentration, the solution obtained after diluting hydrofluoric acid is soaked for 15s , float off the oxide layer on the surface of the Si wafer, and then dry it with nitroge...

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Abstract

The preparation process of low temperature double ion beam sputtered multilayer Ge/Si film with self-organized Ge quantum dots adopts Ar as the work gas and two ion beam sputtering guns, and features that at the conditions of work chamber background pressure lower than 3.0x10<-4> Pa, the substrate temperature of 200-400 deg.c, and work gas (Ar) pressure of (1.0-4.0)x10<-2> Pa, Si space layer and Ge quantum dot layer are deposited alternately on the Si substrate material by means of double ion beam sputtering technology. The surface strain potential field effect the previous Ge quantum dot layer generates is utilized in realizing the ordered growth of the Ge quantum dots in the subsequent layer, and this raises the film surface smoothness and filming quality and results in multilayer Ge/Si film with self-organized Ge quantum dots in high density and homogeneous size and quantum size effect. The present invention is compatible with IC technology, low in production cost and easy for industrial production.

Description

technical field [0001] The invention relates to a preparation method of a cooling type near-infrared photon detector film material, which is a low-cost and industrial preparation method of Ge quantum dots. Background technique [0002] Semiconductor quantum dots, also known as semiconductor nanocrystal grains, are called quantum dots when the size of the nanocrystal grains is smaller than its exciton Bohr radius. The scale of quantum dots is between macroscopic solids and microscopic atoms and molecules. It can be regarded as an "artificial atom" in theoretical calculations. It has an atomic-like physical structure and a molecular-like quasi-splitting energy level. It is a hot research topic in condensed matter physics today. For example, the exciton Bohr radius of Ge is 23.6nm. When the size of Ge nanocrystals is smaller than 23.6nm, it is called Ge quantum dots. The typical size of quantum dots is 1-10nm, containing several to tens of thousands of atoms. Since the movem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C23C14/54
Inventor 杨宇孔令德宋超张曙
Owner YUNNAN UNIV
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