Heat-treating methods and systems

Abstract

A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of U.S. patent application Ser. No. 10 / 005,186 filed Dec. 4, 2001, which in turn is a continuation-in-part of U.S. patent application Ser. No. 09 / 729,747 filed Dec. 4, 2000 (now U.S. Pat. No. 6,594,446). This application further claims foreign priority from Patent Cooperation Treaty application number PCT / CA01 / 00776 filed May 30, 2001. This application is also related to U.S. patent application Ser. No. 10 / 427,094 filed Apr. 30, 2003, which is a division of the above-noted U.S. patent application Ser. No. 09 / 729,747. This application is further related to U.S. patent application Ser. No. 10 / 777,995 filed Feb. 12, 2004. Each of the above-noted patents and patent applications is hereby incorporated herein by reference.FIELD OF THE INVENTION [0002] The present invention relates to heating of objects, and more particularly to methods and systems for heat-treating a workpiece. BACKGROUND OF THE INVENTION [0...

AI Technical Summary

Benefits of technology

[0018] The present invention addresses the above needs by providing, in accordance with one aspect of the invention, a method and system for heat-treating a workpiece. The method includes pre-heating the workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Pre-heating the workpiece to the intermediate temperature, prior to heating the surface to the higher desired temperature, decreases the magnitude of the thermal gradients that occur in the workpiece when the surface is heated to the desired temperature. Therefore, thermal stress in the workpiece is reduced. Where the workpiece has a crystal lattice structure, such as a semiconductor wafer for example, damage to the lattice is correspondingly reduced.

[0020] Enhancing cooling of the workpiece further reduces the time that the workpiece spends at high temperatures. In embodiments where the workpiece is a semiconductor wafer, this faster cooling again reduces dopant diffusion in the workpiece, allowing for the formation of shallower junctions.

Problems solved by technology

The ion implantation process damages the crystal lattice structure of the surface region of the wafer, and leaves the implanted dopant atoms in interstitial sites where they are electrically inactive.

The high temperatures required to anneal the device side of a semiconductor wafer tend to produce undesirable effects using existing technologies.

As performance demands of semiconductor wafers increase and device sizes decrease, it is necessary to produce increasingly shallow and abruptly defined junctions, and therefore, diffusion depths that would have been considered negligible in the past or that are tolerable today will no longer be tolerable in the next few years or thereafter.

Existing annealing technologies are generally incapable of achieving such shallow junction depths.

However, the wafer tends to remain hot for a considerable time after the power supply to the tungsten filaments is shut off, for a number of reasons.

Accordingly, if the wafer is heated with such a system to a sufficiently high temperature to repair the crystal lattice structure and activate the dopants, the wafer tends to remain too hot for too long a period of time, resulting in diffusion of the dopants to significantly greater depths in the wafer than the maximum tolerable diffusion depths that will be required to produce 30 nm junction depths.

Although the vast majority of dopant diffusion occurs in the highest temperature range of the annealing cycle, lowering the annealing temperature is not a satisfactory solution to the diffusion problem, as lower annealing temperatures result in significantly less activation of the dopants and therefore higher sheet resistance of the wafer, which would exceed current and / or future tolerable sheet resistance limits for advanced processing devices.

Thus, the wafer does not remain hot long enough for much dopant diffusion to occur.

However, because the bulk regions of the wafer, as well as device side areas other than the localized area heated by the laser, remain cold when the localized surface area of the device side is heated to annealing temperature, extreme thermal gradients are produced in the wafer, resulting in large mechanical strains which cause the crystal planes within the wafer to slip, thereby damaging or breaking the crystal lattice.

In this regard, a very small spatial movement may completely destroy the crystal lattice.

Thermal gradients may also cause other damage, such as warpage or defect generation.

Even in the absence of slippage, a non-uniform temperature distribution across the wafer may cause non-uniform performance-related characteristics, resulting in either inadequate performance of the particular wafer, or undesirable performance differences from wafer to wafer.

In addition, the large amount of energy delivered by the laser or lasers to the device side of the wafer is non-uniformly absorbed by the pattern of devices thereon, resulting in deleterious heating effects in regions of the wafer where annealing is not desired, and may also produce further large temperature gradients causing additional damage to the silicon lattice.

A typical temperature-time profile of the device side surface using this method is flat for a very long time, followed by a rapid increase and rapid cooling of the surface resulting from the laser anneal.

Although this method purports to reduce junction leakage currents as compared to laser annealing alone, the long duration of the low-temperature annealing stage causes the dopants to diffuse to greater depths within the device side of the wafer.

Such diffusion, which may have been tolerable or perhaps even negligible by early 1990s standards, would not permit the formation of sufficiently shallow junctions to comply with current performance and industry roadmap requirements.

In addition, as the substrate side is irradiated rather than the device side, non-uniform heating of the device side due to non-uniform absorption by the pattern of devices is also much lower than for laser annealing, resulting in lower lateral temperature gradients and reduced damage to devices.

However, early indications suggest that embodiments of this method may result in somewhat deeper diffusion of the dopants than laser annealing.

This caused the wafer to spend longer times at high temperatures, thereby tending to increase dopant diffusion to depths that would be unacceptable by modern standards.

In addition, the re-reflections of such radiation back to the wafer tended to produce non-uniform heating in the wafer, resulting in slippage and other problems associated with non-uniform or excessive heating.

Moreover, this method purported to be suitable for heating the wafer with 2% uniformity, which is not acceptable for modern RTP systems.

In addition, this method typically involved a delay of a few seconds between the isothermal heating stage and the subsequent thermal flux heating stage, during which the wafer remained at a relatively high intermediate temperature, such as 1100° C., for example.

This delay at the intermediate temperature can cause significant dopant diffusion, thus interfering with the ability to produce shallow junctions in accordance with modern performance requirements.

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