Unlock instant, AI-driven research and patent intelligence for your innovation.

Resist pattern-forming method, and radiation-sensitive resin composition

a technology of resist pattern and resin composition, which is applied in the direction of photosensitive materials, instruments, photomechanical equipment, etc., can solve the problems of reduced carbon content, film loss, and impaired etching resistan

Active Publication Date: 2014-12-11
JSR CORPORATIOON
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method achieves both superior etching resistance and inhibition of film loss, enhancing lithography characteristics like CDU and resolution by balancing the dissolution of the polymer component at exposed sites while maintaining high carbon content.

Problems solved by technology

When a conventional radiation-sensitive resin composition is used in such a resist pattern-forming method in which an organic solvent is used as a developer solution, a film loss may be caused after resist pattern formation on the surface at light-exposed sites, resulting from use of an organic solvent as a developer solution.
On the other hand, at light-exposed sites, a disadvantage of impaired etching resistance may also occur due to a decrease in the carbon content.
Thus, achieving both superior etching resistance and inhibition of the film loss has been reportedly difficult.
In addition, when the film loss is caused, improvement of lithography characteristics involving CDU (Critical Dimension Uniformity), MEEF (Mask Error Enhancement Factor) and resolution in fine regions, etc., has been difficult, which may result from the film loss.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist pattern-forming method, and radiation-sensitive resin composition
  • Resist pattern-forming method, and radiation-sensitive resin composition
  • Resist pattern-forming method, and radiation-sensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[0247]A monomer solution was prepared by dissolving 28.4 g (35 mol %) of the compound (M-1), 18.0 g (15 mol %) of the compound (M-10) and 53.6 g (50 mol %) of the compound (M-16) in 200 g of 2-butanone, and then adding thereto 2.38 g (3 mol %) of AIBN. A 1,000 mL three-necked flask charged with 100 g of 2-butanone was purged with nitrogen for 30 minutes, and thereafter heated to 80° C. with stirring. The monomer solution prepared was added dropwise using a dropping funnel over 3 hrs. The time when dropwise addition was started was assumed to be a start time point of the polymerization reaction, and the polymerization reaction was carried out for 6 hours. After completion of the polymerization reaction, the polymerization solution was cooled to no greater than 30° C. by water-cooling. The cooled polymerization solution was charged into 2,000 g of methanol, and the white powder precipitated was filtered off. Thus resultant white powder was washed twice with 400 g of methanol, and ther...

synthesis examples 2 to 19

[0248]Polymers (A-2) to (A-11), and (CA-1) to (CA-8) were obtained in a similar manner to Synthesis Example 1 except that each monomer compound of the type and the amount shown in Tables 1-1 and 1-2 was used. Further, the content of the structural unit derived from each monomer and the molar ratio of the hydrocarbon group (a2) to the hydrocarbon group (a1) in each polymer obtained, and measurements of Mw and Mw / Mn ratio of each polymer are shown in Tables 2-1 and 2-2.

TABLE 1-1Proportion of monomer-chargedStructural unit (II)Structural unitnot containingcontainingStructural unitOther structural(I)hydroxyl grouphydroxyl group(III)unitPolymermonomermol %monomermol %monomermol %monomermol %monomermol %SynthesisA-1M-135M-1015——M-1650——Example 1SynthesisA-2M-245M-1110——M-1645——Example 2SynthesisA-3M-335M-1225——M-1640——Example 3SynthesisA-4M-530M-1017M-133M-1650——Example 4SynthesisA-5M-645M-9 25——M-1620——Example 5M-1710SynthesisA-6M-730M-1010——M-1645——Example 6M-1515SynthesisA-7M-440M-9 15...

synthesis example 20

[0249]A monomer solution was prepared by dissolving 35.8 g (70 mol %) of the compound (M-2) and 14.2 g (30 mol %) of the compound (M-18) in 100 g of 2-butanone, and then adding thereto 2.34 g of dimethyl 2,2′-azobisisobutyrate. A 500 mL three-necked flask charged with 20 g of 2-butanone was purged with nitrogen for 30 minutes, and thereafter heated to 80° C. with stirring. The monomer solution prepared was added dropwise using a dropping funnel over 3 hrs. The time when dropwise addition was started was assumed to be a start time point of the polymerization reaction, and the polymerization reaction was carried out for 6 hours. After completion of the polymerization reaction, the polymerization solution was cooled to no greater than 30° C. by water-cooling. The reaction solution was transferred to a 1 L separatory funnel, then homogenously diluted with 200 g of n-hexane, and 800 g of methanol was charge thereto followed by mixing. Subsequently, 20 g of distilled water was charged, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
molar ratioaaaaaaaaaa
molar ratioaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application is a continuation application of International Application No. PCT / JP2011 / 079736, filed Dec. 21, 2011, which claims priority to Japanese Patent Application No. 2011-016814, filed Jan. 28, 2011. The contents of these applications are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a resist pattern-forming method, and a radiation-sensitive resin composition.[0004]2. Discussion of the Background[0005]Miniaturization of structures of various types of electronic devices such as semiconductor devices and liquid crystal devices has been accompanied by demands for miniaturization of resist patterns in lithography processes, and formation of fine resist patterns having a line width of about 90 nm using an ArF excimer laser that is a radioactive ray with a short wavelength has been investigated. Various compositions for resist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/004G03F7/20
CPCG03F7/20G03F7/0041G03F7/0045G03F7/0046G03F7/0397G03F7/2041G03F7/325G03F7/0047G03F7/0382G03F7/38
Inventor SAKAKIBARA, HIROKAZUFURUKAWA, TAIICHIHORI, MASAFUMIITO, KOJIMIYATA, HIROMU
Owner JSR CORPORATIOON