2results about How to "Ease of batch processing" patented technology

A semiconductor chip batch feeding tool comprises a pair of guide rails arranged in the length direction of a support in a spaced mode, a material preparing area and a feeding area are sequentially arranged between the guide rails, and the guide rails are each provided with a moving block in a sliding fit mode; the seat plate is installed on the moving block, a plurality of placing areas are arrayed on the seat plate and used for placing the material boxes, first through holes are formed in the placing areas in a penetrating mode, and a plurality of limiting columns are arranged on the periphery of each first through hole and used for limiting the material boxes; the jacking mechanism is located below the feeding area and installed on the support, second through holes are formed in the feeding area in an array mode, and the jacking mechanism corresponds to each second through hole and is used for jacking the semiconductor chips in the material box when the base plate moves to the feeding area and the first through holes correspond to the second through holes one to one. The jacking mechanism comprises a horizontal top plate which is movably arranged in the vertical direction. According to the tool, the semiconductor chips can be conveniently prepared in batches, and the semiconductor chips of the multiple material boxes are jacked up, so that the semiconductor chips on the top layer can be conveniently fed in batches.

The application discloses a kind of supercapacitor negative high-efficiency composite electrode and preparation method thereof, including the block body iron of substrate and the outer layer PrNi x Fe 1‑x O3 conductive active layer, and Fe2O3 active layer between the two, by wet chemical etching and transient high temperature joule heat method in-situ synthesis active layer, and further utilize wet chemical brush coating and transient high temperature joule heat method in-situ synthesis conductive active layer, two are asymmetric sandwich structure, it is favorable to build charge transport path, improve charge transport efficiency, at the same time, can effectively relieve the volume change generated in the process of charge and discharge of iron oxide, unlike the characteristics of particle composite structure easy to collapse, inhibit the occurrence of electrode material pulverization, wherein, using transient high temperature joule heat preparation technology, layered in-situ build heterostructure, not only simple and fast, also make the structure compact and dense, maintain the stability of overall electrode structure, improve the long-period cycle charge and discharge capacity of electrode.