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Modified method for preparing single c-axis oriented zinc oxide film by electrochemical deposition process

A deposition process and electrochemical technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of difficult to obtain dense ZnO thin films, control of thin film nucleation density, etc., to simplify the device manufacturing process, Good crystallinity, cost reduction effect

Active Publication Date: 2009-10-21
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far, there are few reports on the galvanostatic deposition of ZnO thin films, and the control of the nucleation density at the initial stage of film growth cannot be achieved by using a single galvanostatic deposition method, so it is difficult to obtain dense or high-quality ZnO. film

Method used

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  • Modified method for preparing single c-axis oriented zinc oxide film by electrochemical deposition process
  • Modified method for preparing single c-axis oriented zinc oxide film by electrochemical deposition process
  • Modified method for preparing single c-axis oriented zinc oxide film by electrochemical deposition process

Examples

Experimental program
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Effect test

Embodiment 1

[0051] 1. Prepare zinc nitrate precursor solution. 2.97 g of Zn(NO 3 ) 2 .6H 2 O was dissolved in 100 ml of deionized water to obtain a clear and transparent 0.1 mol / L zinc nitrate precursor solution.

[0052] 2. Use ITO glass as the substrate. Process as follows:

[0053] (1) Ultrasonic washing in detergent solution for 3-5 minutes, and then fully rinsed with deionized water;

[0054] (2) After taking it out, ultrasonically clean it in acetone and alcohol for 3-5 minutes, and then rinse it with deionized water;

[0055] (3) Immerse the cleaned ITO film in dilute hydrochloric acid with a concentration of 5% by volume and corrode it for 10 seconds, rinse thoroughly with deionized water after taking it out, and dry it for later use.

[0056] 3. Film growth. Divided into the following four steps:

[0057] a. Connect the processed ITO substrate into the attached figure 1 The electrochemical deposition system shown. The basic composition of the electrochemical deposition ...

Embodiment 2

[0063] 1. Prepare zinc nitrate precursor solution. 0.297 g of Zn(NO 3 ) 2 .6H 2 O and 0.85 g NaNO 3

[0064] (sodium nitrate) was dissolved in 100 ml of deionized water to obtain a clear and transparent 0.1 mol / l zinc nitrate precursor solution, and the molar concentration ratio of zinc ions to nitrate ions was 1:11.

[0065] 2. Choose low-resistance single crystal silicon wafer as the substrate. Process as follows:

[0066] (1) At first, the hydrofluoric acid with a volume ratio of 1: 1 cleans the silicon chip under the condition of mechanical stirring for 5 minutes to remove the oxide layer on the surface of the silicon chip;

[0067] (2) After taking it out, ultrasonically clean it in acetone, alcohol, and deionized water for 5 minutes, then rinse it fully with deionized water after taking it out, and dry it for later use.

[0068] 3. Film growth. Divided into the following four steps:

[0069] a. Connect the processed substrate to the electrochemical deposition sy...

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Abstract

The invention relates to a method for preparing a single c-axis oriented ZnO thin film by an improved electrochemical deposition process, which is characterized in that a crystal column is formed on the surface of a pretreated substrate by combining an electrochemical pretreatment process with a constant current deposition The small size of the ZnO seed layer enables the subsequent deposition of the ZnO thin film to have a single c-axis growth characteristic. Specifically, it includes three steps: preparation of electrodeposition precursor solution, substrate cleaning treatment, and film growth. Finally, an electrochemical deposition system is used for film growth. The prepared ZnO film has a single c-axis orientation, a high degree of crystallinity, and a high transmittance in the visible light region, and can be used as a window layer for thin-film solar cells, as well as in various fields such as piezoelectricity, optoelectronics, and gas sensing. . The method has low cost, does not need a vacuum environment or uses organic matter and high-temperature heating equipment, and is suitable for large-area and large-scale film material preparation.

Description

technical field [0001] The invention relates to a method for preparing a single c-axis oriented ZnO thin film, more precisely, relates to a method for preparing a single c-axis oriented ZnO thin film by using an improved cathodic electrochemical deposition method. The prepared zinc oxide film can be applied to various optoelectronic devices such as window layers of thin film solar cells, ultraviolet light detectors, piezoelectric sensors, and gas sensors, and belongs to the field of semiconductor optoelectronic materials and nano energy materials. Background technique [0002] ZnO is a very important II-VI compound semiconductor material. Its forbidden band width is 3.37eV and its exciton binding energy is as high as 60meV. Such as ultraviolet light-emitting diodes, ultraviolet semiconductor lasers) and other fields have been widely used; at the same time, ZnO also has piezoelectric, gas-sensitive, photosensitive and other characteristics, in piezoelectric transducers, surfa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B30/02
Inventor 高相东彭芳李效民于伟东
Owner 江苏先进无机材料研究院
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