Preparation method of high silicon orientation silicon steel thin plate
A technology of oriented silicon steel and thin plate, which is applied in the field of low-carbon high-silicon silicon steel thin plate preparation, can solve the problems of compositional uniformity, compactness and strength of the film, does not involve the specific preparation of high-silicon silicon steel, and the problem of silicon steel film peeling, etc., to achieve The effects of avoiding rolling defects and rolling difficulties, short diffusion annealing treatment time, and short preparation cycle
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Embodiment 1
[0014] The low-silicon silicon steel containing 2.5wt% silicon was placed in the sputtering chamber as the base material, and pure iron was deposited by DC magnetron sputtering and pure silicon and MnS is alternately deposited on both sides of the substrate to prefabricate the Fe / Si multilayer film deposition layer, wherein the thickness of the Fe layer is 2-3nm, the thickness of the Si layer is 0.1-1nm, and the thickness of the deposition layer is 5 times the thickness of the substrate plus the multilayer film. ~7%; and then into the sputtering chamber O 2 , using the ion beam sputtering deposition method to sputter the target Cr on the outer surface of the deposition layer to deposit a layer of Cr-containing spinel oxide coating; then perform diffusion annealing treatment, and finally perform rolling and recrystallization annealing treatment.
[0015] The grain size of the Fe / Si multilayer film prefabricated in this embodiment is regular and has orientation.
Embodiment 2
[0017] The industrial pure iron is used as the substrate in the sputtering chamber. Under the protective Ar atmosphere, the pure iron is deposited by DC magnetron sputtering deposition method, and the silicon material and MnS are alternately deposited on the substrate by radio frequency magnetron sputtering deposition method. On both sides, prefabricate the Fe / Si multilayer film deposition layer, wherein the thickness of the Fe layer is 5-10nm, the thickness of the Si layer is 1-4nm, and the thickness of the deposition layer is 11-13% of the base material plus the thickness of the multilayer film; O 2 , using the ion beam sputtering deposition method to sputter the target MgO on the outer surface of the deposition layer to deposit a layer of magnesium oxide coating; then carry out diffusion annealing treatment, and finally carry out rolling and recrystallization annealing treatment.
[0018] The grain size of the Fe / Si multilayer film prefabricated in this embodiment is regula...
Embodiment 3
[0020] The industrial pure iron is used as the base material to be placed in the sputtering chamber. Under the protective Xe atmosphere, the ferrosilicon alloy, Ti, Mo and V are simultaneously deposited on both sides of the base material by the multi-arc ion sputtering deposition method, and the high-silicon silicon is prefabricated. Iron alloy film deposition layer, the thickness of the deposition layer is 16% to 18% of the thickness of the base material plus alloy film; then pass N into the sputtering chamber 2 and O 2 , using the multi-arc ion sputtering deposition method to reactively sputter-deposit AlN, TiN and a layer of Cr-containing spinel oxide coating on the outer surface of the deposition layer of Al, Ti and Cr on the target materials; Surface treatment, finally rolling and recrystallization annealing.
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