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A method for making the carbon nano tube electronic part

A technology for carbon nanotubes and electronic devices, applied in the field of preparing carbon nanotube electronic devices, can solve the problems of high cost, need for instruments, slow speed, etc., and achieve the effects of low cost, mild operating conditions and high yield

Inactive Publication Date: 2007-08-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Step-by-step methods include electron beam etching, focused ion beam deposition, and alternating current electrophoresis, etc., which can position and make electrodes for a single carbon nanotube. The disadvantage is that the speed is too slow, special instruments are required, and the cost is expensive; Photolithography, mask evaporation, direct growth on electrodes, etc. These methods are fast and can produce a large number of products at one time, but their cost is still high

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  • A method for making the carbon nano tube electronic part
  • A method for making the carbon nano tube electronic part
  • A method for making the carbon nano tube electronic part

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Embodiment 1: adopt Au / Cr to be the carbon nanotube two-terminal device and field-effect transistor that electrode material is made

[0084] The detailed process of preparation is:

[0085] 1) Directly grow ultra-long carbon nanotubes on the surface of the silica substrate;

[0086] Grow ultra-long carbon nanotubes on the surface of the silica substrate, with a length ranging from a few microns to about one centimeter; the growth temperature is 800-1000 degrees Celsius; the growth time is more than 10 minutes; the carbon source uses ethanol; hydrogen is used as the reducing agent; high Pure argon was used as the carrier gas.

[0087] 2) Coated with metal film

[0088] Thermal evaporation can be used to plate a metal film on the surface of the silicon dioxide substrate distributed with carbon nanotubes: first coat a layer of chromium with a thickness of about 10 nm, and then coat a layer of gold with a thickness of about 80 nm. The thickness of the metal film can be c...

Embodiment 2

[0096] Embodiment 2: adopt Au / Ti as the carbon nanotube two-terminal device and field-effect transistor that electrode material is made

[0097] The detailed process of preparation is:

[0098] 1) Directly grow ultra-long carbon nanotubes on the surface of the silica substrate;

[0099] Grow ultra-long carbon nanotubes on the surface of the silica substrate, with a length ranging from a few microns to about one centimeter; the growth temperature is 800-1000 degrees Celsius; the growth time is more than 10 minutes; the carbon source uses ethanol; hydrogen is used as the reducing agent; high Pure argon was used as the carrier gas.

[0100] 2) Coated with metal film

[0101] Thermal evaporation can be used to plate a metal film on the surface of the silicon dioxide substrate distributed with carbon nanotubes: first coat a layer of titanium with a thickness of about 10 nm, and then coat a layer of gold with a thickness of about 40-80 nm. The thickness of the metal film can be c...

Embodiment 3

[0109] Embodiment 3: adopt Pd / Ti as the carbon nanotube two-terminal device and field-effect transistor that electrode material is made

[0110] The detailed process of preparation is:

[0111] 1) Directly grow ultra-long carbon nanotubes on the surface of the silica substrate;

[0112] Grow ultra-long carbon nanotubes on the surface of the silica substrate, with a length ranging from a few microns to about one centimeter; the growth temperature is 800-1000 degrees Celsius; the growth time is more than 10 minutes; the carbon source uses ethanol; hydrogen is used as the reducing agent; high Pure argon was used as the carrier gas.

[0113] 2) Coated with metal film

[0114] Magnetron sputtering can be used to plate a metal film on the surface of the silicon dioxide substrate distributed with carbon nanotubes: first coat a layer of titanium with a thickness of about 10nm, and then coat a layer of palladium with a thickness of about 90nm. The thickness of the metal film can be ...

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Abstract

The invention discloses a method of producing carbon nanometer tube electronic elements; the method includes steps as following: 1) carbon nanometer tubes are distributed on the surface of base of the insulated dielectric layer; 2) metallic film is plated on the base of the insulated dielectric layer; 3) patterned self-packaged monolayer film is formed on the metallic film; 4) corrosion; 5) post treatment. Comparing with current method in literature, the invention possesses many unique advantages: the method is easy and without complex and expensive instrument; it belongs to parallel method and can proceed industry automatization and large scale integration; it can breach limit of photoetching technique and achieve the electrode space between of several dozens of nanometer; the operation condition is mild, it is at room temperature, so that chemical vapour deposition can not be used in low melting point metal can be avoided; the craft period is short, all the cause just needs about 5 hours; the efficient is high, cost is low, range of application is wide, it possesses capacious foreground of business.

Description

technical field [0001] The invention relates to a method for preparing a carbon nanotube electronic device, in particular to a method for preparing a carbon nanotube field effect transistor and an electrode structure using the carbon nanotube as a connecting wire. Background technique [0002] Nanotubes have nanoscale diameters and are ideal one-dimensional materials. Carbon nanotubes have various excellent properties, especially their electrical properties (Acc. Chem. Res., 2002, 35, 1035-1044). Carbon nanotubes are two types of metallic and semiconducting due to their different orientations and diameters; metallic carbon nanotubes can be used to make leads, and semiconducting carbon nanotubes can be used as channel materials to make full carbon nanotubes device. Carbon nanotubes can withstand 10 9 A / cm 2 The current density is several orders of magnitude higher than that of metals; the strong force between carbon atoms makes the surface of carbon nanotubes have few def...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/336
Inventor 高宏军刘忠范现晓军姚亚刚张锦吴忠云
Owner PEKING UNIV
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