A method for making the carbon nano tube electronic part
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PEKING UNIV
- Publication Date
- 2007-08-01
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing a carbon nanotube electronic device, in particular to a method for preparing a carbon nanotube field effect transistor and an electrode structure using the carbon nanotube as a connecting wire. Background technique
[0002] Nanotubes have nanoscale diameters and are ideal one-dimensional materials. Carbon nanotubes have various excellent properties, especially their electrical properties (Acc. Chem. Res., 2002, 35, 1035-1044). Carbon nanotubes are two types of metallic and semiconducting due to their different orientations and diameters; metallic carbon nanotubes can be used to make leads, and semiconducting carbon nanotubes can be used as channel materials to make full carbon nanotubes device. Carbon nanotubes can withstand 10 9 A / cm 2 The current density is several orders of magnitude higher than that of metals; the strong force between carbon atoms makes the surface of carbon nanotubes have few def...