Novel piezoresistance type pressure pickup and method for making same

A pressure sensor, piezoresistive technology, applied in the direction of fluid pressure measurement by changing ohmic resistance, and measurement of the property and force of piezoresistive materials, which can solve the problems of large differences in sensor performance, low sensor response speed, and difficult implementation Stress film thickness consistency and other issues, to achieve the consistency of product performance guarantee, eliminate metal connection, high sensitivity effect

Inactive Publication Date: 2007-12-05
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the silicon cup structure also has the following problems: (1) due to the light weight of the stress diaphragm, the response speed of the sensor is low, and the resonance frequency is usually only around kilohertz, which limits the application of the sensor; (2) due to the large size of the substrate Due to the non-uniformity of material thickness and the limitation of surface smoothness, it is difficult to achie

Method used

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  • Novel piezoresistance type pressure pickup and method for making same
  • Novel piezoresistance type pressure pickup and method for making same
  • Novel piezoresistance type pressure pickup and method for making same

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Experimental program
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Effect test

Embodiment 1

[0045] Fabrication of pressure sensor using 4-inch surface silicon film as P-type SOI wafer

[0046] (1) Epitaxy to make the thickness of the silicon film on the surface reach 2μm;

[0047] (2) The silicon film on the surface of the SOI material is doped with boron by the diffusion process, the pre-deposition temperature is 980°C; the redistribution temperature is 1100°C, the time is 60 minutes, and the surface doping concentration of the piezoresistor is 5×10 19 cm -3 ;

[0048] (3) Thermal oxidation surface silicon film growth SiO 2 , the temperature is 1100°C, the time is 20 minutes, and the thickness is 320nm;

[0049] (4) Use photolithography to remove the thermal oxidation grown SiO in areas other than the closed frame and strip resistors 2 layer, forming a closed frame structure varistor, a strip varistor and a Wheatstone full-bridge interconnection structure;

[0050](5) Plasma etching technology is used to etch the doped silicon thin film layer except the closed ...

Embodiment 2

[0059] Fabrication of pressure sensors using p-type SOI wafers with a 5-inch surface silicon film

[0060] (1) Epitaxy to make the thickness of the silicon film on the surface reach 5 μm;

[0061] (2) The silicon film on the surface of the SOI material is doped with boron by diffusion process, the pre-deposition temperature is 960°C; the redistribution temperature is 1200°C, the time is 90 minutes, and the resistance doping concentration is 6×10 19 cm -3 ;

[0062] (3) Thermal oxidation surface silicon film growth SiO 2 layer, the temperature is 1100°C, the time is 10 minutes, and the thickness is 300nm;

[0063] (4) Use photolithography to remove the thermal oxidation grown SiO in areas other than the closed frame and strip resistors 2 layer, forming a closed frame structure varistor, a strip varistor and a Wheatstone full-bridge interconnection structure;

[0064] (5) Plasma etching technology is used to etch the doped silicon thin film layer except the closed frame and...

Embodiment 3

[0070] Fabrication of pressure sensor using 4-inch surface silicon film as P-type SOI wafer

[0071] (1) Epitaxy to make the thickness of the silicon film on the surface reach 4 μm;

[0072] (2) The silicon film on the surface of the SOI material is doped with boron by the diffusion process, the pre-deposition temperature is 960°C; the redistribution temperature is 1100°C, the time is 50 minutes, and the resistance doping concentration is 3×10 19 cm -3 ;

[0073] (3) Thermal oxidation surface silicon film growth SiO 2 layer, the temperature is 1200°C, the time is 30 minutes, and the thickness is 350nm;

[0074] (4) Use photolithography to remove the thermal oxidation grown SiO in areas other than the closed frame and strip resistors 2 layer, forming a closed frame structure varistor, a strip varistor and a Wheatstone full-bridge interconnection structure;

[0075] (5) Plasma etching technology is used to etch the doped silicon thin film layer except the closed frame and s...

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Abstract

This invention is neotype pressure resistance pressure sensor, including inward-leg wire, package outer, outward-leg wire, pin hole, substrate and the piezoresistor, installing the close structure piezoresistor and the banding piezoresistor,; the four piezoresistors make up of the Wheatstone bridge interconnect structure, a-alloy sputtering from the pin hole, installing the electronic glass mass on the surface of close structure outer. The production method is: (1)mixing; (2)surface thermal oxidization; (3)technic-processing of photoetch and plasma corrosion;(4)photoengraving the pin hole; (5)sputtering a-alloy; (6)static electrostatic encapsulating electronic glass; (7)testing and capsulation. The technic-scheme of this invention makes the production-craft more simple, and compatible with the craft of CMOS integrated circuit plate, and have more high harmonic frequency, and can work in the high temperature circumstance and assuring the compatibility of the production performance.

Description

technical field [0001] The invention relates to a pressure sensor and a preparation method thereof, more precisely, to a filmless piezoresistive pressure sensor made of SOI (Silicon-On-Insulator, silicon on an insulating substrate) material and a preparation method thereof. Background technique [0002] Human beings have entered the information age, and the importance of sensors as collection devices for various types of information is self-evident. The rapid development of microelectronics and micromachining technology has greatly promoted the progress of sensor technology and greatly expanded the application range of sensors. As the most important type of Micro Electro Mechanical Systems (MEMS) products, semiconductor pressure sensors are widely used in many fields such as industrial automation, aerospace, oil well logging, and automobile engines. At present, piezoresistive pressure sensors mostly use a silicon cup structure. Under the action of pressure, the stress film ...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L9/06
Inventor 张为李丹
Owner TIANJIN UNIV
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