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Diamond film polishing method

A diamond film and alloy technology, applied in the polishing field of diamond film, can solve problems such as unsatisfactory methods, and achieve the effects of reducing polishing cost, high polishing efficiency and strong etching ability

Inactive Publication Date: 2008-01-30
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, there are many methods for polishing the diamond film at present, but due to factors such as the roughness and flatness achieved by polishing, and the cost, each method is not ideal.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The polishing method of diamond film, it comprises the steps:

[0025] 1) Deposit Ti metal, a strong carbide-forming element, on the surface of a clean diamond film by magnetron sputtering deposition method, with a power of 200W, and the diamond film is heated to 300°C for 10 minutes, and the thickness of the Ti film (coating) is about 10μm;

[0026] 2), heat the diamond film coated with Ti film on the surface in a vacuum furnace, and heat it at 1150°C with a vacuum degree of 10 -2 Pa vacuum heat treatment for 30 minutes, a titanium carbide layer is formed on the surface, and the thickness of titanium carbide is about 0.5 μm;

[0027] 3) On the UNIPOL802 precision polishing machine, use SiC as the abrasive to polish at room temperature, the abrasive particle size is below 0.5 μm, and the speed is 200 rpm, and the polishing is performed for 5 minutes.

[0028] 4), the diamond film is ultrasonically cleaned with acetone solvent, and oxygen plasma etching is carried out ...

Embodiment 2

[0031] Mix the strong carbide forming element Ti metal powder and copper powder (mass ratio 7: 3) in acetone evenly, apply it on the clean diamond film surface with a thickness of about 1 mm, dry, vacuum heat treatment and other follow-up steps are the same as in the embodiment 1. Repeat the above process 5 times, the surface roughness reaches about 0.1 μm, and the flatness is less than 150 nm.

Embodiment 3

[0033] The polishing method of diamond film, it comprises the steps:

[0034] 1), using the electron beam evaporation plating method, the metal W capable of forming strong carbides with carbon is coated on the surface of the diamond film to obtain a diamond film coated with metal W on the surface, and the thickness of the W film is about 5 μm;

[0035] 2), heating in a vacuum furnace, vacuum degree 10 -1 Pa, the heating temperature is 1000°C, the time is 15 minutes, a carbide layer is formed on the surface, and the thickness of the WC layer is about 0.2 μm;

[0036] 3), on commercially available common mechanical polishing machine, adopt SiC that hardness is lower than diamond as abrasive, diamond film is polished, time 5 minutes, remove the protruding part of crystal grain tip portion on the surface of diamond film; Low, only the carburized part of the protruding part of the grain on the surface of the diamond film can be thrown away, and the tungsten carbide layer in other ...

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Abstract

The invention relates to a polishing method of a diamond membrane. The polishing method of the diamond membrane is characterized in that the invention includes the steps that 1) at first a pure metal or alloy which can form strong carbide with the carbon is plated on the surface of the diamond membrane; 2) the heating is carried out in a vacuum furnace with the vacuum ranging from 10-1 Pa to 10-4 Pa, heating temperature more than 800 DEG C, and the time ranging from 5 minutes to 30 minutes, and the carbide layer is formed on the surface with the thickness ranging from 0.05 microns to 0.5 microns; 3) the SiC or Al2O3 with the hardness lower than that of the diamond is adopted as the grinding material on the mechanical polishing machine, and the diamond membrane obtained from step 2) is polished with the time ranging from 5 min to 30 min; 4) the diamond membrane after polished by the mechanism is cleaned by the acetone solvent ultrasonic, dried and disposed for 3 min through 10 min by adopting the oxygen plasma; after that, the diamond membrane is cleaned by the acetone solvent ultrasonic; 5) the step 1) through step 4) are repeated form 1 time through 30 times. The invention has the advantages of perfect coarseness and smoothness, low polishing cost and high polishing efficiency.

Description

technical field [0001] The invention belongs to the field of superhard material processing, and in particular relates to a polishing method of a diamond film. Background technique [0002] The diamond film deposited on the non-diamond substrate by chemical vapor deposition method has the basic properties of natural diamond, such as high hardness and wear resistance, good thermal conductivity, insulation, optical properties, acoustic properties and chemical stability, etc., as A unique material with many excellent properties, it has great application prospects in many fields. However, the diamond film prepared by the chemical vapor deposition method is a polycrystalline film, and the roughness of the growth surface of the diamond film increases with the increase of the film thickness, so it cannot be used directly in many cases. Therefore, flat polishing of the diamond film is an essential and important process step. Due to the high chemical inertness and high hardness of t...

Claims

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Application Information

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IPC IPC(8): B24B1/00
Inventor 王传新汪建华
Owner WUHAN INSTITUTE OF TECHNOLOGY
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