Polishing solution for ultra-precise low-damage polish of large size diamond wafer and preparation thereof

A technology of diamond and polishing liquid, which is applied in the direction of surface polishing machine tools, grinding/polishing equipment, polishing compositions containing abrasives, etc., can solve the problems of high polishing temperature, poor polishing quality, and high equipment cost, and achieve improvement Dispersion stability, improving surface accuracy and surface quality, and solving the effect of large-size polishing disc deformation

Inactive Publication Date: 2008-11-12
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a polishing liquid suitable for ultra-precision and low-damage polishing of large-size diamond wafers and its preparation method, which solves the problem of using a mixed melt as an oxidant in the current chemical mechanical polishing of diamond wafers. High polishing temperature, high equipment cost, low processing efficiency, poor polishing quality, etc.

Method used

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  • Polishing solution for ultra-precise low-damage polish of large size diamond wafer and preparation thereof
  • Polishing solution for ultra-precise low-damage polish of large size diamond wafer and preparation thereof

Examples

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Effect test

Embodiment 1

[0031] A method for preparing a polishing liquid for ultra-precision and low-damage polishing of large-size diamond wafers, comprising the steps of:

[0032] 1) According to the mass percentage of each raw material: abrasive: 18%, oxidant: 25%, stabilizer: 3%; dispersant: 1%; catalyst: 2.5%; deionized water: 50.5%; select abrasive, oxidant, Stabilizer, dispersant, catalyst and deionized water raw materials for standby;

[0033] The abrasive is boron carbide with a purity of 98% and a particle size of 2 μm; the oxidant is potassium permanganate; the stabilizer is tartaric acid; the dispersant is sodium silicate; the catalyst is phosphoric acid.

[0034] 2) Add the abrasive to the deionized water according to the above mass percentage, and ultrasonically stir for 15 minutes to fully disperse the abrasive in the deionized water to prepare a suspension;

[0035] 3) Add the above-mentioned oxidizing agent and catalyst into the suspension according to the above-mentioned mass perc...

Embodiment 2

[0038] A method for preparing a polishing liquid for ultra-precision and low-damage polishing of large-size diamond wafers, comprising the steps of:

[0039] 1) According to the mass percentage of each raw material: abrasive: 10%, oxidant: 30%, stabilizer: 3%; dispersant: 1%; catalyst: 4.5%; deionized water: 51.5%; select abrasive, oxidant, Stabilizer, dispersant, catalyst and deionized water raw materials for standby;

[0040] The abrasive is titanium dioxide with a purity of 99% and a particle size of 10 μm; the oxidizing agent is ammonium persulfate and hydrogen peroxide; the stabilizer is tartaric acid and sodium silicate, and the mass percentages of tartaric acid and sodium silicate are respectively 1.5%; the dispersant is sodium hexametaphosphate; the catalyst is sulfuric acid and ferrous sulfate, and the mass percentages of sulfuric acid and ferrous sulfate each account for 2.25%.

[0041] 2) Add the abrasive to the deionized water according to the above mass percentag...

Embodiment 3

[0045] A method for preparing a polishing liquid for ultra-precision and low-damage polishing of large-size diamond wafers, comprising the steps of:

[0046] 1) According to the mass percentage of each raw material: abrasive: 15%, oxidant: 23%, stabilizer: 5%; dispersant: 1%; catalyst: 3.5%; deionized water: 52.5%; select abrasive, oxidant, Stabilizer, dispersant, catalyst and deionized water raw materials for standby;

[0047] The abrasive is silicon carbide with a purity of 99% and a particle size of 2 μm; the oxidant is potassium dichromate; the stabilizer is citric acid; the dispersant is sodium hexametaphosphate; The catalysts are phosphoric acid and iron nitrate.

[0048] 2) Add the abrasive to the deionized water according to the above mass percentage, and ultrasonically stir for 15 minutes, so that the abrasive is fully dispersed in the deionized water and prepared into a suspension;

[0049] 3) Add the above-mentioned oxidizing agent and catalyst into the suspension a...

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Abstract

The invention belongs to the superhard material polishing technical field and discloses polishing solution used for ultraprecise and low-damage polishing of a large-scale diamond wafer and a method for preparing the same. The method is characterized in that: oxidants with strong oxidbillity including chromium trioxide, ammonium persulphate, potassium permanganate, potassium dichromate, oxydol, potassium ferrate, potassium perchlorate and so on are adopted as main compositions; a proper amount of abrasive material is added for preparing the polishing solution; and micro-removal of surface material of the diamond wafer can be realized by means of chemical and mechanical composite action at normal temperature or low temperature. Moreover, the polishing effect of the polishing solution can be improved by addition of proper amount of catalyst, stabilizer, dispersant and so on as well. The polishing solution and the method have the advantages that: the polishing solution prepared has the advantages of high polishing efficiency, good polishing quality, good stability and so on; and the ultraprecise and low-damage polishing of the large-scale diamond wafer can be realized at the normal temperature or the low temperature.

Description

technical field [0001] The invention belongs to the technical field of superhard material polishing, in particular to a polishing liquid for ultra-precision and low-damage polishing of a large-size diamond wafer and a preparation method thereof. Background technique [0002] Diamond wafers not only have high hardness and wear resistance, but also have excellent electrical insulation, thermal conductivity, light transmission, acoustic and mechanical properties, and are regarded as the most promising new materials in the 21st century. It has a wide range of applications in the field of national defense and cutting-edge technology. However, due to the restriction of the crystal phase growth mechanism, as the thickness of the wafer increases, its surface roughness and grain size will also increase to several microns or even dozens of microns, and precision machining methods must be used to reduce its surface roughness. It can be put into use only when it is reduced to the nanom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04B24B29/00
Inventor 金洙吉苑泽伟董伯先康仁科
Owner DALIAN UNIV OF TECH
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