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White potato shaped silicon dioxide colloidal sol and method of producing the same

A silicon dioxide and potato technology, applied in the direction of chemical instruments and methods, other chemical processes, polishing compositions containing abrasives, etc., can solve problems such as small friction coefficient, scratches on workpieces, and affect polishing efficiency, and achieve friction The effect of large coefficient, less scratches and high polishing efficiency

Inactive Publication Date: 2009-04-08
TIANJIN SILICA CRYSTAL POLISHING MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

See details figure 2 The silica particles produced by this method generally have a particle size of 40-80 nanometers, and are uniform, spherical and stable sols. However, this spherical silica rolls when polished and ground, and the friction coefficient is small. affect the polishing efficiency
At the same time, the surface of spherical particles has a high density and silanol groups. After drying, hard scales are formed and bonded to the supply system and equipment and brought into the polishing liquid to easily scratch the workpiece. This problem has become a problem. Prominent problems in crystal polishing operations in the industry

Method used

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  • White potato shaped silicon dioxide colloidal sol and method of producing the same
  • White potato shaped silicon dioxide colloidal sol and method of producing the same
  • White potato shaped silicon dioxide colloidal sol and method of producing the same

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preparation example Construction

[0030] A kind of preparation method of potato-shaped silica sol, carry out according to the following steps:

[0031] 1. Preparation of starting sol

[0032] (1). Containing SiO 2 In the active silicic acid solution of 1-6% by weight and pH=2-4, add water-soluble calcium salt, magnesium salt or their mixture aqueous solution, calcium salt, magnesium salt or their mixture and the SiO 2 The weight ratio reaches 1200-8000PPm for mixing;

[0033] (2). Add an alkali metal hydroxide or a water-soluble solution of an organic base to the aqueous solution prepared above and mix to make SiO 2 / M 2 The molar ratio of 0 is 20-200, PH=7.5-9.5, wherein M represents a metal atom or an organic base molecule;

[0034] (3). Heating the above solution at a temperature of 60°C-150°C and a heating and stirring time of 0.5-4 hours to make a receiver sol for particle growth;

[0035] (4). The above-mentioned sol is exchanged with a mixed bed of cations and anions to further remove anions and ca...

Embodiment 1

[0048] Commercially available sodium silicate (SiO 2 / M 2 O) molar ratio is 3.24, SiO 2 The content is 29.2% and pure water is added to make SiO 2 Concentration is 3.8% (weight ratio) sodium silicate aqueous solution, above-mentioned dilute sodium silicate aqueous solution is equipped with 500kg treated and regenerated cation exchange resin 001 * 7Styrene-DVB through 800 * 2000cm, obtains SiO 2 Concentration is 3.52% (weight ratio) acidic active silica gel solution; Put into 300kg above-mentioned acidic active silicic acid in the 500 liters of stainless steel retorts that condenser, agitator are housed, add 800g 10% CaCl under stirring at room temperature 2 Aqueous solution, after stirring for 1 hour, add 10% NaOH aqueous solution dropwise, adjust the pH to about 7.5-8.5, heat to 100°C and stir for 2 hours. The alkaline sol prepared above is cooled and passed through a strong alkaline anion and Mixed bed of strongly acidic cation exchange resin. Obtain an alkaline sol with a ...

Embodiment 2

[0050] Prepare acidic active silica gel solution with embodiment 1;

[0051] In a 500-liter stainless steel pressure reaction tank with stirring, put 300kg of the above-mentioned acidic active glue solution, add 800g of 10% CaCl under stirring at room temperature 2 Aqueous solution, after stirring for half an hour. Add dropwise 10% NaoH aqueous solution to adjust PH=7.5-8.5, heat at 120°C, and stir for 4 hours. After cooling, take it out and transfer to In the distillation tank, heat at 100°C, under vigorous stirring. Add acidic active sol dropwise, the dropping rate is 90 liters / hour, the speed of distilling water is 90 liters / hour, distilling water to keep the liquid level unchanged, after 26 hours, Get SiO 2 Alkaline silica sol with a content of 32%, pH=9.5, and a viscosity of 6.5C.P. Observation of SiO by transmission electron microscope 2 The particles are potato-shaped, with a particle size of 40-70nm.

[0052] comparative experiment

[0053] Pressure Test ...

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Abstract

The invention relates to a potato silicon dioxide sol and a preparation method thereof, comprising a liquid medium and silicon dioxide sol grains; the invention is characterized in that the shapes of the silicon dioxide sol grains are like potatoes. The preparation method comprises the following steps of: I, preparing a starting sol liquid: water-soluble calcium salt and a magnesium salt water liquid are arranged in an active silicic acid water liquid which comprises a weight portion ratio of 1 to 6 percent of SiO2; then the water-soluble calcium salt and magnesium salt water solution is added and a water-soluble liquid of alkali metal hydroxdides is added; the mixtures are heated and stirred and prepared into the sol of an alkaline starting receiver; and II, preparing a potato-shaped sol liquid; an active silicic acid liquid is added into the starting sol; a liquid grain growing method like normal pressure is adopted for preparing. The invention has the beneficial effects that divalent alkali ions are added into the receiver sol for the growing of the grains in the active silicic acid for leading the grains to be grown for preparing the potato silicon dioxide sol with large grains. The invention is suitable to polishing semi-conductor crystal materials; the friction coefficients thereof are large; the polishing efficiency is high; the rigidity of dry and hard matters is small; and the nicks of polishing sheets are less.

Description

technical field [0001] The invention belongs to a polishing solution for semiconductor crystal materials, in particular to a potato-shaped silica sol with good stability, easy to break condensed particles after drying, low hardness, high polishing speed for crystal surface polishing, and not easy to produce scratches, and its Preparation. Background technique [0002] The manufacture of semiconductor integrated circuits begins on the surface of semiconductor wafers, especially silicon single wafers. The quality requirements of the wafer surface are particularly strict, and it is completed with special polishing equipment and polishing fluid. Compound crystal, gallium arsenide, sapphire and other polishing widely use large particle silica sol as the base liquid. U.S.P 3947,376 discloses a large-particle silica sol manufacturing process that can meet the needs of the above-mentioned polishing process. See details figure 2 The silica particles produced by this method general...

Claims

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Application Information

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IPC IPC(8): C09G1/02C09K3/14
Inventor 施为德
Owner TIANJIN SILICA CRYSTAL POLISHING MATERIALS
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