Method for preparing co-doping nanometer TiO2 film with adjustable C and N contents

A co-doping and thin-film technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of uncontrollable doping composition ratio and achieve good activity effect

Inactive Publication Date: 2009-12-02
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

We also used TiCN reagent to prepare C-N co-doped TiO 2 powder and studied its photocatalytic dehydrogenation characteristics[13], that is, C, N co-doped TiO can be obtained by heat treatment and oxidation of TiCN in air 2 Powder, but the doping ratio of C and N cannot be controlled

Method used

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  • Method for preparing co-doping nanometer TiO2 film with adjustable C and N contents
  • Method for preparing co-doping nanometer TiO2 film with adjustable C and N contents
  • Method for preparing co-doping nanometer TiO2 film with adjustable C and N contents

Examples

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Effect test

Embodiment 1

[0021] Example 1: Preparation of carbon-nitrogen co-doped nano-TiO by reactive magnetron sputtering method on the surface of metal titanium sheet or FTO 2 film. First, prepare TiCN film. During sputtering, the area ratio of carbon to titanium in the carbon-titanium mosaic target is 0.06, and the studio is first drawn to 10 -3 Pa-level vacuum, followed by nitrogen (reactive gas) and argon (sputtering gas), adjust the ratio of nitrogen to argon to 1:4, and then adjust the high vacuum valve to keep the working chamber pressure at 2Pa. In terms of pressure, the thickness of the film is controlled by controlling the sputtering current and sputtering time. The sample is annealed in an air atmosphere at 450℃ for 2h.

[0022] Use silver conductive glue to glue the copper wire (10cm×1.5mm) and the conductive surface together, place it under an infrared lamp for 2 hours to dry, and then use one-component room temperature curing silicone rubber 703 to encapsulate the exposed copper wire, sil...

Embodiment 2

[0024] Example 2: Preparation of TiC and TiCN films by reactive magnetron sputtering, the area of ​​carbon in the carbon titanium embedded target is 10 cm 2 , The area of ​​titanium is 165cm 2 . First draw the studio to 10 -3 Pa-level vacuum, only argon (sputtering gas) sputtered to obtain TiC film, heat treatment to obtain C-doped TiO 2 film. In addition, argon (sputtering gas) and nitrogen (reactive gas) were introduced to adjust the ratio of nitrogen to argon, sputtered to obtain TiCN thin film, and heat treated to obtain C and N co-doped TiO 2 film. In the process of preparing the film, the working chamber pressure was maintained at a sputtering pressure of 2 Pa, the sputtering current was controlled to be 0.5 A, the sputtering time was 2.5 hours, and the sample was annealed in an air atmosphere at 500° C. for 90 minutes.

[0025] Use silver conductive glue to glue the copper wire (10cm×1.5mm) and the conductive surface together, place it under an infrared lamp for 24 hours to...

Embodiment 3

[0027] Example 3: Preparation of nano-TiCN film and carbon-nitrogen co-doped nano-TiO by reactive magnetron sputtering 2 Film (same as Example 1). The carbon and nitrogen co-doped nano TiO 2 The film was placed in a certain amount of methylene blue solution, under ultraviolet light irradiation, the UV-visible absorption spectrum of the methylene blue solution was measured with the irradiation time, and it was found that with the increase of the irradiation time, the absorbance of the methylene blue solution decreased sequentially ( Figure 4 ), indicating that carbon and nitrogen co-doped nano-TiO 2 The film has good degradation activity for methylene blue. Explain that the carbon and nitrogen co-doped nano TiO proposed by the present invention 2 The film is expected to be used in photocatalytic degradation of organic pollutants. Figure 5 Shows different ratios of carbon and nitrogen co-doped nano-TiO 2 The photocatalytic degradation activity of the film is compared with image 3 ...

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Abstract

The invention belongs to the technical field of TiO2 photo-catalysis, and in particular relates to a method for preparing a co-doping nanometer TiO2 film with an adjustable content ratio of C to N. The method comprises the following steps: firstly preparing a TiCN film with adjustable C and N components by a reaction magnetron sputtering coating method, and then processing the TiCN film by a common thermal oxidization method to prepare the C and N co-doping nanometer TiO2 film; and main equipment are a magnetron sputtering coating system and a muffle. In the prepared film, the relative contents of the C and the N can be controlled by adjusting the area ratio of C to Ti and the volume ratio of N to Ar in a target. The film has good activity of water splitting; and photo-catalysis test results show that the film has obvious activity of photocatalysis and degradation of methylene blue, and can be applied to photocatalysis and degradation of organic pollutants.

Description

Technical field [0001] The invention belongs to the technical field of titanium dioxide photocatalysis, and specifically relates to a method for preparing a co-doped nano titanium dioxide film with an adjustable ratio of carbon to nitrogen content. Background technique [0002] With the increasingly prominent problems of energy crisis and environmental pollution, greenhouse effect and ozone layer destruction, hydrogen energy has become an ideal new energy because of its clean and pollution-free characteristics. Since Fujishima and Honda [1] discovered TiO in 1972 2 Semiconductors can photolyse water into H under ultraviolet light 2 And O 2 Since then, the research of semiconductor photocatalysis has received attention due to its application in energy and environment. 2 It has the characteristics of non-toxic, high activity, cheap, light corrosion resistance, strong acid resistance, strong alkali and strong oxidizing agent, and has become the photocatalyst with the best applicatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 崔晓莉朱蕾孙钰鶥谢建设
Owner FUDAN UNIV
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