Method for preparing CdS film in microwave hydrothermal mode

A microwave hydrothermal and thin film technology, applied in chemical instruments and methods, crystal growth, coating and other directions, can solve the problems of expensive supporting facilities, low utilization rate of raw materials, expensive equipment and instruments, etc., and achieve controllable and reduced grain growth. The effect of film production cost and convenient operation

Inactive Publication Date: 2010-04-28
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods either have high requirements on equipment, expensive equipment and instruments, and the supporting facilities and required raw mate

Method used

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  • Method for preparing CdS film in microwave hydrothermal mode
  • Method for preparing CdS film in microwave hydrothermal mode

Examples

Experimental program
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Effect test

Embodiment 1

[0016] Embodiment 1: 1) will analytically pure cadmium chloride monohydrate (CdCl 2 ·H 2 O) added to deionized water to make Cd 2+ A transparent solution with a concentration of 0.05mol / L, the resulting solution is denoted as A;

[0017] 2) Add analytically pure sodium thiosulfate pentahydrate (Na 2 S 2 SO 3 ·5H 2 O), making the solution Cd 2+ / S 2 SO 3 2- The molar concentration ratio of is 1: 1, and the gained solution is denoted as B;

[0018] 3) Add analytically pure EDTA (ethylenediaminetetraacetic acid) to solution B so that the concentration ratio of ethylenediaminetetraacetic acid is 0.0025mol / L, then adjust the pH value of the solution to 2.0-6.9, stir to form a homogeneous sol, Denote it as C, and use it as a coating solution for later use;

[0019] 4) Clean the substrate: ultrasonically vibrate the slide glass in water and absolute ethanol for 10 minutes respectively, mix nitric acid with a mass concentration of 70% and hydrogen peroxide with a mass conce...

Embodiment 2

[0023] Embodiment 2: 1) will analytically pure cadmium chloride monohydrate (CdCl 2 ·H 2 O) added to deionized water to make Cd 2+ A transparent solution with a concentration of 0.1mol / L, the resulting solution is denoted as A;

[0024] 2) Add analytically pure thiourea (SC(NH 2 ) 2 ), so that the Cd in the solution 2+ / :SC(NH 2 ) 2 The molar concentration ratio of is 1: 2, and the gained solution is denoted as B;

[0025] 3) Add analytically pure polyvinylpyrrolidone to solution B, so that the concentration of polyvinylpyrrolidone is 0.005mol / L, then adjust the pH value of the solution to 2.0-6.9, stir to form a uniform sol, denoted as C, as a coating Liquid standby;

[0026] 4) Clean the substrate: ultrasonically vibrate the ITO glass in water and absolute ethanol for 10 minutes respectively, mix nitric acid with a mass concentration of 70% and hydrogen peroxide with a mass concentration of 30% in a volume ratio of 1:1, and then mix the substrate Soak the slices in ...

Embodiment 3

[0030] Embodiment 3: 1) will analytically pure cadmium chloride monohydrate (CdCl 2 ·H 2 O) added to deionized water to make Cd 2+ A transparent solution with a concentration of 0.1mol / L, the resulting solution is denoted as A;

[0031] 2) Add analytically pure sodium thiosulfate pentahydrate (Na 2 S 2 SO 3 ·5H 2 O), making the solution Cd 2+ / S 2 SO 3 2- The molar concentration ratio of is 1: 4, and the gained solution is denoted as B;

[0032] 3) Add analytically pure polyvinylpyrrolidone to solution B, so that the concentration of polyvinylpyrrolidone is 0.006mol / L, then adjust the pH value of the solution to 2.0-6.9, stir to form a uniform sol, denoted as C, as a coating Liquid standby;

[0033] 4) Clean the substrate: ultrasonically vibrate the Si substrate in water and absolute ethanol for 10 minutes respectively, mix nitric acid with a mass concentration of 70% and hydrogen peroxide with a mass concentration of 30% in a volume ratio of 1:1, and then mix the sub...

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Abstract

The invention relates to a method for preparing a CdS film in a microwave hydrothermal mode, which comprises the following steps: adding CdC12.H2O into deionized water to obtain a solution A; adding Na2S2SO3.5H2O or SC(NH2)2 into the solution A to obtain a solution B; adding versene acid or plasmosan into the solution B to obtain a solution C; pouring the solution C into a hydrothermal reaction kettle, putting a substrate in the hydrothermal kettle, and dipping the substrate in a film-coating liquid; sealing the hydrothermal reaction kettle, putting the hydrothermal reaction kettle in an MDS-6 temperature and pressure double-control microwave hydrothermal reaction apparatus, and naturally cooling to room temperature after the reaction is completed; and opening the hydrothermal reaction kettle, taking out the substrate, respectively washing the substrate with distilled water and absolute ethyl alcohol, and vacuum-drying to obtain the CdS photoelectric film on the surface of the substrate. The reaction of the invention is completed in the liquid phase by one time; and the prepared CdS film has the advantages of high purity, favorable evenness, and firm bonding of the film and the substrate, and does not need the crystallization heat treatment in the later period.

Description

technical field [0001] The invention relates to a method for preparing a CdS thin film, in particular to a method for preparing a CdS thin film by microwave hydrothermal heat. Background technique [0002] Cadmium sulfide (CdS) crystal is a typical II-VI piezoelectric semiconductor material. CdS thin film is an important n-type window material and a semiconductor photosensitive material in heterojunction solar cells. It has a large Bandgap width (about 2.45ev). Because of its special optical and electrical properties, it has been widely used in various light emitting devices, photovoltaic devices, optical detectors and photosensitive sensors and other fields. As a very promising semiconductor material, cadmium sulfide has attracted worldwide research interest. [0003] The currently reported methods for preparing CdS optical thin films mainly include sputtering [J.N.Ximello-Quiebras, C.Mejía-García, A.Caballero-Rosas, H.Hernández-Contreras, G.Contreras-Puente.Photomodulati...

Claims

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Application Information

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IPC IPC(8): C30B29/50C30B7/10C23C26/00H01L31/0296
Inventor 黄剑锋胡宝云曹丽云李嘉胤吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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