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Method for preparing nitrogen-doped TiO2 photocatalytic film

A technology of photocatalytic thin film and nitrogen doping, which is applied in chemical instruments and methods, catalyst activation/preparation, physical/chemical process catalysts, etc. It can solve the problem that it is difficult to obtain the amount of nitrogen doping, and the method is simple and easy to degrade Efficiency improvement and photocatalytic performance improvement effect

Inactive Publication Date: 2010-11-17
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

TiO 2 Nitrogen doping of photocatalytic materials is mainly realized by chemical vapor deposition, sol-gel, thermal oxidation magnetron sputtering, anodic oxidation and other technologies, but no matter whether interstitial or replacement nitrogen atoms are obtained, the main problems It is difficult to obtain TiO with higher nitrogen doping 2 , so that the photocatalytic efficiency is limited

Method used

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  • Method for preparing nitrogen-doped TiO2 photocatalytic film
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  • Method for preparing nitrogen-doped TiO2 photocatalytic film

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Embodiment 1

[0027] Embodiment 1: put the polished metal titanium or titanium alloy into the LD-70 ion nitriding furnace with ammonia gas and the furnace cavity maintaining negative pressure, the metal titanium or titanium alloy is used as the cathode material, and the furnace body is used as the anode Material, apply a voltage between the cathode and anode to produce glow discharge, control the temperature at 700°C, and hold the temperature for 15h; when the temperature drops to 150°C, take out the sample from the ion nitriding furnace; weigh 20g of anhydrous sodium carbonate, 5g of nonaqueous Add 1000ml of deionized water to dissolve sodium silicate and place it in the reaction tank as the electrolyte; use electric mixer to stir and circulate condensed water to control the temperature of the whole system in the reaction tank within 40 °C; Metal titanium or titanium alloy is used as the anode, and the stainless steel plate is used as the cathode material. The pulse voltage is slowly increa...

Embodiment 2

[0029] Embodiment 2: put the polished metal titanium or titanium alloy into the LD-70 ion nitriding furnace with ammonia gas and the furnace cavity maintaining negative pressure, the metal titanium or titanium alloy is used as the cathode material, and the furnace body is used as the anode Material, apply a voltage between the anode and cathode to produce glow discharge, control the temperature at 900°C, and hold the temperature for 10h; when the temperature drops to 100°C, take out the sample from the ion nitriding furnace; weigh 15g of anhydrous sodium carbonate, 10g of nonaqueous Add 1000ml of deionized water to dissolve sodium silicate and place it in the reaction tank as the electrolyte; use electric mixer to stir and circulate condensed water to control the temperature of the whole system in the reaction tank within 40 °C; Metal titanium or titanium alloy is used as the anode, and the stainless steel plate is used as the cathode material. The pulse voltage is slowly incre...

Embodiment 3

[0031] Embodiment 3: put the polished metal titanium or titanium alloy into the LD-70 ion nitriding furnace with ammonia gas and the furnace cavity maintaining negative pressure, the metal titanium or titanium alloy is used as the cathode material, and the furnace body is used as the anode Material, apply a voltage between the cathode and anode to produce glow discharge, control the temperature at 850°C, and hold the temperature for 5 hours; when the temperature drops to 180°C, take out the sample from the ion nitriding furnace; weigh 25g of anhydrous sodium carbonate, 15g of nonaqueous Add 1000ml of deionized water to dissolve sodium silicate and place it in the reaction tank as the electrolyte; use electric mixer to stir and circulate condensed water to control the temperature of the whole system in the reaction tank within 40 °C; Metal titanium or titanium alloy is used as the anode, and the stainless steel plate is used as the cathode material. The pulse voltage is slowly i...

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Abstract

The invention provides a method for preparing a nitrogen-doped titanium dioxide (TiO2) photocatalytic film, which comprises: firstly, performing nitriding treatment on a metal titanium or titanium alloy surface by using a ion nitriding process; and secondly, growing a TiO2 thin film in situ on the metal titanium or titanium alloy substrate obtained after the nitriding treatment by using a microarc oxidation technique. The method is used in the field of photocatalytic purification. Compared with a TiO2 thin film which is not doped with nitrogen, the nitrogen doped TiO2 photocatalytic film prepared by the method has the advantages that: the ultraviolet light and visible light absorption efficiency is improved obviously; the intensity of light generated current is improved obviously; and the organic material degradation efficiency is improved obviously.

Description

technical field [0001] The invention relates to a method for preparing nitrogen-doped titanium dioxide (TiO 2 ) method and application of photocatalytic thin film. Background technique [0002] Titanium dioxide is a wide bandgap semiconductor with a bandgap width of 3.2eV (anatase), which can only exhibit photocatalytic activity under the excitation of ultraviolet light. Being able to use a large amount of visible light in solar energy is the study of TiO 2 An important target for photocatalysts. Anion-doped TiO 2 Due to its photocatalytic activity in the visible light region and overcoming the defects of metal ion doping, it has attracted the attention of many researchers. Among them, nitrogen doping is considered to be one of the most effective methods. [0003] In general, TiO 2 Nitrogen doping of photocatalytic materials is divided into two types: interstitial and replacement. Interstitial nitrogen atoms exist in TiO 2 In the gap of the crystal lattice, it is unst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J37/02B01J21/06C23C8/36C25D11/26
Inventor 潘春旭江旭东王永钱
Owner WUHAN UNIV
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