Silicon nitride material and preparation method thereof, as well as silicon nitride heating device and production method thereof

A silicon nitride heating device, silicon nitride technology, applied in the direction of heating element materials, etc., to achieve the effect of light weight, good fluidity and low density

Active Publication Date: 2010-12-15
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Now the heating parts of various brands of instant heaters on the market are generally made of metal or coated with ceramic coating, and the heater made of metal is generally on an aluminum plate The resistance wire heating elements are arranged on the back of the board. The problem is that the thickness of the heating plate of the metal heater needs to reach 15 cm, because the thin metal plate will bend and strain during the heating process. If the heating Thickening the plate will not only make the heater bulky, but the temperature of the heating plate will not immediately change with the voltage or current intensity, which will cause problems such as difficult temperature control
Because the aluminum nitride substrate has high thermal conductivity, the temperature of the heating plate can change rapidly with the temperature of the resistance heating element, making its temperature controllable, but aluminum nitride is expensive as a substrate
[0005] Patent No. 99113534.2 discloses a silicon nitride heating element and its manufacturing method. This heating element is a combination of resistance wire and silicon nitride composite material Sintered into one body, although the service life is greatly improved due to the isolation of the air source, this structure still cannot get rid of the threat of the residual air in the sintered body to the resistance wire. The ceramic heater modified by silicon powder, although the surface energy is increased after adding nano-scale silicon nitride powder, the contact area between particles is increased, the temperature and pressure during sintering are reduced, and the formation of silicon nitride sintered at room temperature is realized. , but the addition of too much α-phase nano-scale silicon nitride powder will lead to poor control of shrinkage, too little amount will not be obvious, and its sintering temperature is as high as 2100 ° C; and currently, Germany BACH.RC and Japan Kyocera Corporation in Occupy a monopoly position in the international market

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  • Silicon nitride material and preparation method thereof, as well as silicon nitride heating device and production method thereof
  • Silicon nitride material and preparation method thereof, as well as silicon nitride heating device and production method thereof
  • Silicon nitride material and preparation method thereof, as well as silicon nitride heating device and production method thereof

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preparation example Construction

[0051] figure 1 It is a flowchart of the preparation method of the silicon nitride material according to the present invention, such as figure 1 Shown, the preparation method of silicon nitride material of the present invention comprises the following steps:

[0052] 1) Weigh the raw materials according to the following weight percentages: 78%-98% silicon nitride powder, 0.2%-9% aluminum oxide, 0.2%-9% yttrium trioxide and 0.05%-5% tungsten carbide. Put it into an alumina ceramic tank, add abrasives and grinding media, and ball mill and stir for 8 to 40 hours;

[0053] 2) Sieve the ball-milled slurry, put it into an oven, dry at a temperature of 50-120°C for 4-20 hours, and granulate by cold isostatic pressing or spray drying under a pressure of 30MPa-120MPa to obtain silicon nitride Powder.

[0054] figure 2 It is a flow chart of the preparation method of the silicon nitride heating device described in the present invention, such as figure 2 As shown, the preparation...

Embodiment 1

[0058] 92.5g of silicon nitride powder with an average particle size of 0.6μm (in which the content of α-phase silicon nitride exceeds 96%), 3g of aluminum oxide with an average particle size of 0.4μm, and 4g of trioxide with an average particle size of 0.5μm Put diyttrium and 2g tungsten carbide into a special container for ball milling, add ethanol of the same weight, put it into the grinding medium silicon nitride, and ball mill for 10 hours, then put it in an oven at 80°C for 6 hours, and then cool the powder at 100MPa Static pressure granulation, the particle size of the obtained silicon nitride base material powder is about 150 microns, and then put it into a prefabricated mold, and at the same time, tungsten wire is embedded in the silicon nitride base material as a resistance heating element as required. 150MPa cold isostatic pressing, the formed blank is placed in a sintering furnace, protected by a nitrogen atmosphere, and sintered in the following heating process: wi...

Embodiment 2

[0061] Put 89g of silicon nitride powder with an average particle size of 6 microns, 4g of aluminum oxide with an average particle size of 5 microns, 4g of diyttrium trioxide with an average particle size of 7 microns, and 3g of tungsten carbide in a container dedicated to the ball mill , add the same weight of ethylene glycol, put it into the grinding medium silicon nitride and ball mill for 40 hours, then put it in an oven at 120°C for 20 hours, granulate the powder at 60MPa cold isostatic pressure, and then put it into the prefabricated In the mold, put the designed metal tungsten wire according to the predetermined position, form it at 160MPa cold isostatic pressing, put it into a precision argon atmosphere sintering furnace, pass it into the argon atmosphere protection, and sinter in the following heating process. Raise the temperature to 1000°C within an hour, then pressurize to 0.1MPa at the same time as the temperature rises, continue to raise the temperature to 1300°C,...

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Abstract

The invention relates to a silicon nitride material and a preparation method thereof, as well as a silicon nitride heating device and production method thereof. The silicon nitride material comprises the following components in percentage by weight: 78%-98% of silicon nitride power, 0.2%-9% of aluminum oxide, 0.2%-9% of yttrium oxide and 0.05%-5% of tungsten carbide, and the silicon nitride material is prepared by the following steps of: weighing all the raw materials. putting in a container, ball-milling and stirring; putting material slurry obtained after ball milling in an oven for drying to obtain material powder; and finally pelleting by cold isostatic pressing. The silicon nitride heating device comprises resistor heating units and a substrate; the resistor heating units are arranged on the surface of the substrate or in the substrate; and the substrate is made of the silicon nitride material. The production method of the heating device comprises the steps of: imbedding the silicon nitride material and the resistor heating units according to prefabricated shape and position and pressing into green ware, and then putting the green ware in a furnace atmosphere to carry out pressure sintering to obtain the finished heating device.

Description

technical field [0001] The invention relates to a silicon nitride material and a preparation method thereof, a silicon nitride heating device and a preparation method thereof, and belongs to the field of inorganic non-metallic materials. Background technique [0002] The heating parts of various brands of instant heaters on the market are generally made of metal or coated with ceramic coatings. The heaters made of metal are generally arranged with resistance wire heating elements on the back of the aluminum plate. The problem it has is The thickness of the heating plate of the heater made of metal needs to reach 15 cm, because the thin metal plate will produce bending and strain during the heating process, if the heating plate is thickened, the heater will become bulky, and the heating plate The temperature does not change immediately with the voltage or current intensity, which causes problems such as difficult temperature control. This kind of heater is non-contact with ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622H05B3/14
Inventor 梁田张伟儒彭珍珍刘文彬
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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