Surface texture method of solar battery silicon slice

A technology of surface texture and solar cells, which is applied in the field of solar cells, can solve the problems of reduced reflectivity, inability to use alkali texture technology, and irregular orientation, etc., and achieve low average reflectivity, strong repeatability and technology transplantation , low cost effect

Inactive Publication Date: 2011-01-05
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For polycrystalline silicon wafers, since the orientation of each crystal grain in the silicon wafer is not fixed, the alkali texturing process like single crystal cannot be used. The general acid texturing method can only reduce the reflectivity to about 20%.
However, 16%-20% reflectivity is still high for a solar cell

Method used

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  • Surface texture method of solar battery silicon slice
  • Surface texture method of solar battery silicon slice
  • Surface texture method of solar battery silicon slice

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] see figure 1 , the process of using nanoscale silver particles to texture a single crystal silicon wafer is as follows:

[0042] (1) Utilize chemical method to prepare nanoscale silver particle, preparation process is: react with silver nitrate and ethylene glycol, PVP is as additive, silver nitrate and ethylene glycol mass ratio are 1: 179, the mass ratio of PVP and silver nitrate is 4.2:1, the reaction temperature is 100°C; the prepared nano-scale silver particles are well dispersed, with an average size of 18-25nm, and its TEM is as follows: Figure 6 shown;

[0043] (2) Using potassium hydroxide solution to remove the damaged layer on the silicon wafer, wherein the mass percentage concentration of potassium hydroxide is 10.5%, the corrosion time is 10min, and the corrosion temperature is 80°C;

[0044] (3) Using potassium hydroxide solution to pre-texture the silicon wafer to obtain a pyramid shape, wherein the mass percentage concentration of potassium hydroxide ...

Embodiment 2

[0049] see figure 1 , the process of using nanoscale silver particles to texture a single crystal silicon wafer is as follows:

[0050] (1) Utilize the chemical method to prepare the nanoscale silver particle that average size is 18~25nm, preparation process is: react with silver nitrate and ethylene glycol, without additive, silver nitrate and ethylene glycol mass ratio are 1: 194, reaction temperature is 120°C;

[0051] (2) Use potassium hydroxide solution to remove the damaged layer on the silicon wafer, wherein the concentration of potassium hydroxide is 15% by mass, the corrosion time is 8min, and the corrosion temperature is 85°C;

[0052] (3) Use potassium hydroxide solution to pre-texture the silicon wafer to obtain a pyramid shape, wherein the concentration of potassium hydroxide is 3% by mass, the corrosion time is 65min, and the corrosion temperature is 90°C;

[0053] (4) uniformly coat the silver particles on the product of (3), with a thickness of 0.5mm, and dry...

Embodiment 3

[0058] see figure 2 , the process of using nano-scale silver particles to texture polycrystalline silicon wafers is as follows:

[0059] (1) Utilize the chemical method to prepare nanoscale silver particles with an average size of 8-11nm, the preparation process is: react with silver nitrate and ethylene glycol, PEI is used as an additive, the mass ratio of silver nitrate and ethylene glycol is 1: 152, PEI The mass ratio with silver nitrate is 5:1, and the reaction temperature is 115°C;

[0060] (2) Use an acid mixed solution to remove the damaged layer and pre-texture the silicon wafer, wherein the acid mixed solution is an aqueous solution of nitric acid and hydrofluoric acid, wherein the nitric acid with a mass percentage concentration of 60% and the hydrofluoric acid with a mass percentage concentration of 40% The volume ratio of the solution is 14:1, the volume ratio of the hydrofluoric acid solution with a mass percent concentration of 40% to deionized water is 1:5, th...

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Abstract

The invention discloses a surface texture method of a solar battery silicon slice, comprising the following steps of: preparing a uniform nano-scale silver particle solution by utilizing a low-cost chemical method; removing a damaged surface layer of the silicon slice and pre-texturing the silicon slice; uniformly coating the nano-scale silver particle solution on the pre-textured silicon slice and drying; soaking the obtained silicon slice in a mixed solution comprising hydrogen peroxide, hydrofluoric acid and anhydrous acetic acid for 30 s-10 min; and then soaking nitric acid, with the concentration of 40-60% by mass, for 1-10 min and cleaning by using deionized water to obtain a silicon slice with low surface reflectivity. The method has the advantages of simple and feasible process flow, low cost and energy consumption, good repeatability and transportability, high yield and better application prospect.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a method for surface texturing of silicon wafers of solar cells (also known as solar cells). Background technique [0002] Mankind is facing a serious energy crisis, and the use of energy is also changing from fossil energy such as petroleum to renewable energy. Solar energy is a widely distributed and inexhaustible clean energy with bright application prospects. A solar cell is a semiconductor device that converts solar energy into electrical energy. However, the photoelectric conversion efficiency of silicon solar cells, which currently accounts for more than half of the photovoltaic market, is not high, which seriously affects the popularization of solar energy. [0003] For silicon materials, since its surface has a reflectivity of up to 40% for visible light, when sunlight hits the surface of silicon solar cells, a large part of the light is reflected. This natural property of si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 杨德仁顾鑫余学功
Owner ZHEJIANG UNIV
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